12-15/56 & Defense 12-15/51 Aerospace Aerospace Transistors, Transistors, Aerospace & Defense 12-15/52 Aerospace Aerospace Aerospace Aerospace Aerospace & Defense 12-15/61 & Defense 12-15/57 & Defense 12-15/58 2N2906A 2N2906AJAN 2N2906AJANTX 2N2906AJANTXV 2N2906JAN Transistors, Aerospace Aerospace Aerospace Aerospace 2N2906JANTX 2N2906JANTXV 2N2907 2N2907A 2N2907AJAN Aerospace Aerospace Transistors, Transistors, Aerospace & Defense 12-15/53 Sm. Signal Sm. Signal & Defense 3-17/29 3-19/14 12-15/60 & Defense 12-15/62 & Defense 12-15/59 Sm. Signal 3-19/13 & Defense 12-15/66 & Defense 12-15/67 & Defense 12-15/68 & Defense 12-15/63 & Defense 12-15/64 & Defense 12-15/65 Sm. Signal Sm. Signal & Defense 3-17/30 3-19/16 12-15/72 PRODUCT INDEX Device No. 2N2907AJANTX 2N2907AJANTXV 2N2907JAN 2N2907JANTX 2N2907JANTXV Page/Item Family Aerospace Aerospace Aerospace Aerospace Aerospace & & & & & Defense Defense Defense Defense Defense 12-15173 12*15174 12-15/69 12*15170 12-15171 2N2913
0} 150/10] 0.4 | 150/15 | 200 | 8 45 | 300 2N2905A 70-5 60 60 5 100/300| 150/10] 0.4 | 150/15 | 200] 8 45 | 300 2N2905AU,TX,V | TO-5 60 60 5 100/300/150/10] 0.4 | 150/15 | 200] 8 45 | 300 2N2906 T0-18 60 40 5 40/120 {150/10| 0.4 | 150/15 | 200] 8 45 | 300 2N2906J,TX,V | TO-18 60 40 5 40/120 }150/10} 0.4 | 150/15 | 200 | 8 45 | 300 2N2906A T0-18 60 60 5 40/120 1150/10! 0.4 | 150/15 | 200] 8 45 | 300 2N2906AN,TX,V | TO-18 60 60 5 40/120 } 150/10! 0.4 | 150/15 } 200] 8 45 | 300 2N2907 T0-18 60 40 5 100/300} 150/10; 0.4 | 150/15 | 200; 8 45 } 300 2N29075,TX,V | TO-18 60 40 5 100/300} 150/10] 0.4 | 150/15 | 200 | 8 45 | 300 2N2907A T0-18 60 60 5 100/300|150/10| 0.4 | 150/15 | 200] 8 45 | 300 2N2907AU,TX,V | TO-18 60 60 5 100/300|150/10| 0.4 | 150/15 | 200] 8 45 | 300 2N3133 T0-5 50 35 4 40/120 |150/10| 0.6 | 150/15 | 200 | 10 | 75 | 150 2N3134 T0-5 50 35 4 100/300|150/10| 0.6 | 150/15 | 200 | 10 | 75 | 150 2N3135 T0-18 50 35 4 40/120 |150/10/ 0.6 | 150/15 | 200 | 10 | 75 | 150 2N3136 T0-18 50 35 4 100
2N2906JAN, JTX, JTXV 2N2906AJAN, JTX, JTXV QN2907JAN, JTX, JTXV CRYETA 2N2907AJAN, JTX, JTXV, JANS 2805 Veteran processed per MIL-S-19500/291 mea PNP Silicon Ronkonkoma, N.Y. 11779 Small-Signal Transistors designed for hagh-speed switching and DC to VHF ampetier applicaborns MAXIMUM FATINGS | | awapos | anzooea | Asting Symbol | Shra0T IM2OT A Writ Cohecior-Ereter vonage | Vceo | ag ag Ver ] | Collector Bans Vohage Veen. | 80 Wie Emitter-Base vollage Vepo 54 3 | Gomector Gurrent Conbnudut he mich Tota! Dewce Daenanar ag = 2c a weit Deraie above 25C | = mio oo Wnts @tc= BC 1 wie Derate ate 25 0 103 vm (CASE 22-03, STYLE 1 Operaning Juecton ang Sicrage Tp Twig 85 to 200 c TO-206A4 (TO-18) Tempearniue Farge 1 | ELECTRICAL CHARACTERISTICS (74 = 25 C uniess otnerwne noted | Characteristic | Symbot | Min ea OFF CHARACTERISTICS | Cothacine- mutter Breakdown Votuge! ' VipReCEO | ak (ig = 10 mAs. le = 9} NPR. 2N2907 a) SAIGDGA, INGOT A Bl = Coblector-Base Breakdown vollage | VieRieBo i) Wee (le = 10 pci |
Ade (Vcg = 50 Vde) 2N2906. 2N2907 - 0.02 2N2306A, 2N2907A a col (Vp = 50 Vde. Ta = 150C) 2N2906, 2N2907 20 2N2306A. 2N2907A - 10 Emitter Cutoff Current 'EBO _ 005 uAdc (Veg = 3.5 Vde. Ig = 0) TUDAb Sed + i1) Putsad Pulse With 20 fo 350 us Quty Cvete 110 222N2906JAN, 2N2907JAN SERIES ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) Characteristic [| sympot ain Mex | unit ON CHARACTERISTICS DC Current Gain(1) bre _ (ig = 0.1 mAde, Vg = 10 Vdc) 2N2906 20 _ 2N2907 36 _ 2N2906A 40 a 2N2907A 76 _ {Ic = 1.0 MAdc. Vcg = 10 Vide} 2N2906 25 175 2N2907 50 450 2N2906A 40 178 2N2907A 100 450 (Ig = 10 mAdc. Vog = 10 Vdc} 2N2906 38 _ 2N2907 75 _ 2N2906A 40 - 2N2907A 100 - {Ic = 150 mAdc. Vog = 10 Vdc) 2N2906, 2N2906A 40 120 2N2907, 2N2907A 100 300 (Ic = 500 made, VcE = 10 Vdc) 2N2906 20 - 2N2907 30 2N2906A 40 2N2S07A 50 (Ic = 1.0 mAde, VogE = 10 Vde, Ta = -55C) 2N2906 15 = 2N2907 30 =- | 2N2906A 20 - 2N2907A so - Cotlector-Emitter Saturation Voltage) VCE (sat) Vide (Ic = 150 mAdc, Ig = 15