2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES *Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. *Excellent DC Current Gain Linearity. *Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. *Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=5V. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range EQUIVALENT CIRCUIT (TOP VIEW) * Total Rating Marking 2008. 9. 23 Revision No : 1 1/4 2N2906E ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA Base Cut-off Current IBL VCE=-30V, VEB=-3V - - -50 nA Collector-Base Breakdown Voltage V(BR)
2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES *Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. *Excellent DC Current Gain Linearity. *Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. *Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=5V. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range EQUIVALENT CIRCUIT (TOP VIEW) * Total Rating Marking 2008. 9. 23 Revision No : 1 1/4 2N2906E ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA Base Cut-off Current IBL VCE=-30V, VEB=-3V - - -50 nA Collector-Base Breakdown Voltage V(BR)
2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=-50nA(Max.), IBL=-50nA(Max.) A1 C Low Leakage Current @VCE=-30V, VEB=-3V. D Excellent DC Current Gain Linearity. B1 C H : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. T Low Collector Output Capacitance 0.65 H 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + T 0.15+0.1/-0.05 D G Low Saturation Voltage MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + G : Cob=4.5pF(Max.) @VCB=5V. 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR US6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 Q1 4 Q2 * Total Rating 1 2 3 6 5 4 Mark
2N2906U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking ZC 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ZC 2N2906U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index. Note) * Lot No. marking method Character arrangement 1 st Character 1 (A) 2 (B) 3 (C) 4 (D) 5 (E) 6 (F) 7 (G) 8 (H) 9 (I) 0 (J) 2nd Character A (1) B (2) C (3) D (4) E (5) F (6) G (7) H (8) I (9) J (0) Year Marking (Week) Periode (Year) 1 st Year (2006) 01 02 51 52 2006-2010-2014... 2 nd Year (2007) 0A 0B 5A 5B 2007-2011-2015... 4 rd Year (2008) J1 J2 E1 E2 2008-2012-2016... 4 th Year (2009) JA JB EA EB 2009-2013-2017... Remark Rotation for 4 years 2008. 9. 5 Revision No : 0 1/1