-- -- 2N5550 NPN HIGH VOLTAGE EBC 160 140 6.0 100 100 60 250 5.0 10 0.25 50 6.0 100 10 -- 2N5551 NPN HIGH VOLTAGE EBC 180 160 6.0 50 120 80 250 5.0 10 0.20 50 6.0 100 8.0 -- 2N5769 NPN SAT SWITCH EBC 40 15 4.5 400 20 40 120 0.35 10 0.50 100 4.0 500 -- 18 2N5770 NPN RF OSC EBC 30 15 3.0 10 15 50 200 1.0 8.0 0.40 10 1.1 800 -- -- 2N5771 PNP SAT SWITCH EBC 15 15 4.5 10 8.0 50 120 0.30 10 0.60 50 3.0 850 -- 20 2N5772 NPN SAT SWITCH EBC 40 15 5.0 500* 20 30 120 0.40 30 0.50 300 5.0 350 -- 28 2N5810 NPN AMPL/SWITCH CBE 35 25 5.0 100 25 60 200 2.0 2.0 0.75 500 15 100 -- -- 2N5811 PNP AMPL/SWITCH CBE 35 25 5.0 100 25 60 200 2.0 2.0 0.75 500 15 100 -- -- Devices are available lead formed, See pages 216 thru 219 for details. Also available in Ammopack or Tape & Reel, See pages 230 thru 235 for details. TO-92-18R (6-December 2004) MAX MAX - - 255 w w w. c e n t r a l s e m i . c o m Small Signal Transistors TO-92 Case (Continued) TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB

or both. Note that an MM74C86 Exclusive-OR gate may also be used, however, the pin out is different than that of the MM74HC86. For optimum performance and maximum bandwidth, high speed buffer transistors (Q1, Q2 and Q3 in Figure 11 ) are recommended. The 2N5770 NPN transistors maintain high speed at high currents when driving the inputs of high voltage CRT drivers. TL/H/11441 - 14 FIGURE 10. Three Channel High Frequency Amplifier with Non-gated DC Feedback (Non-video Application) 13 http://www.national.com Additional Applications of the LM1203A (Continued) TL/H/11441 - 18 FIGURE 11. LM1203A Applications Circuit http://www.national.com 14 LM1203A vs LM1203 printed circuit board with adequate ground plane and power supply decoupling as close to the VCC pins as possible is recommended. Figure 12 shows the layout of the PC board for Figure 11's circuit. For suggestions on optimum PC board layout, please see the reference section below. The LM1203A also includes a built-in power down spot killer to p

or both. Note that an MM74C86 Exclusive-Or gate may also be used, however, the pin out is different than that of the MM74HC86. For optimum performance and maximum bandwidth, high speed buffer transistors (Q1, Q2, and Q3 in Figure 11 ) are recommended. The 2N5770 NPN transistors maintain high speed at high currents when driving the inputs of high voltage CRT drivers. TL/H/11489 - 15 FIGURE 11. LM1203B Applications Circuit 13 http://www.national.com LM1203B versus LM1203 The LM1203B also includes a built in power down spot killer to prevent a flash on the screen upon power down. In some preamplifiers, the video output signal may go high as the device is being powered down. This may cause a whiter than white level at the output of the CRT driver thus causing a flash on the screen. LM1203B is an improved version of the LM1203 RGB video amplifier system and is pin and function compatible with the LM1203. LM1203B's output voltage can swing as low as 0.15V as opposed to 0.9V for the LM1203. This elimina

or both. Note that an MM74C86 Exclusive-OR gate may also be used, however, the pin out is different than that of the MM74HC86. For optimum performance and maximum bandwidth, high speed buffer transistors (Q1, Q2 and Q3 in Figure 11 ) are recommended. The 2N5770 NPN transistors maintain high speed at high currents when driving the inputs of high voltage CRT drivers. TL/H/11441 - 14 FIGURE 10. Three Channel High Frequency Amplifier with Non-gated DC Feedback (Non-video Application) 13 http://www.national.com Additional Applications of the LM1203A (Continued) TL/H/11441 - 18 FIGURE 11. LM1203A Applications Circuit http://www.national.com 14 LM1203A vs LM1203 printed circuit board with adequate ground plane and power supply decoupling as close to the VCC pins as possible is recommended. Figure 12 shows the layout of the PC board for Figure 11's circuit. For suggestions on optimum PC board layout, please see the reference section below. The LM1203A also includes a built-in power down spot killer to p

100 20 50-150 2 50 12 100 2N5451) NPN TO-92(77) 20 40 5 100 20 30-600 2 50 12 100 2N5550 NPN TO-92(72) 140 160 6 100 100 60-250 5 10 6 100 2N5551 NPN TO-92 (72) 160 180 6 50 120 80-250 5 10 6 ~=100 2N5769 NPN TO-92 (72) 15 40 4.5 400 20 40-120 35 10 4 =90 2N5770 NPN TO-92(72) 15 30 4.55 10 15 50-200 10 8 1 90 2N5771 PNP TO-92{72) 15 5 4.5 10 8 50-120 3 10 3. 850 2N5772, NPN TO-92(72) 15 40 5 500 20 30-1270 4 30 5 350 2N5845 NPN TO-92(72) 40 50 6 500 40 25-150 1 500 9 200 2N5845A NPN TO-92 (72) 40 50 6 500 40 35-150 1 500 9 250 2N6067 PNP TO-92(72}) 40 50 5 500 30 50-200 1 100 6 150 MPQ2222 NPN TO-116 (39) 40 60 5 50 50 100- 10 150 8 200 MPQ2907 PNP TO-116 (39) 40 60 5 50 50 100- 10 150 8 200 MPQ3467 PNP TO-116 (39) 40 40 5 200 nD 2- 1 500 25 125 MPQ3725 NPN TO-116 (39) 40 60 5 500 40 95-200 1 100 10 250 MPQ3904 NPN TO-116 (39) 40 60 6 50 40 75- 1 10 4 250 MPQI3906 PNP TO-116 (39) 40 40 5 50 30 -75- t 10 45 200 MPS2714 NPN TO-92(72) 18 18 5 500 18 75-225 45 2 #12 80 MPS2923 NPN TO-92 (72) 25 25 5

0 0.630 0.210 2N578 2N5756 ASI NJS QS2 GTC NJS Q52 SEI MOT 2N5779 2N5755 RAY JAN 2N5778 NJS QS2 0.830 1.430 0.850 0.820 0.720 2N579 2N5777 2N5754 ASI NJS QS2 1.100 1.710 1.100 1.060 0.990 GTC NJS Q52 SEI 2145772 JANTXV NJS QS2 SEI 2N5796 2N5786 ASI 2N5793 2N5770 2N5745 ASI MOT NJS QS2 SEI 0.280 0.222 0.222 0.270 0.360 0.120 100-999 1-99 Part No. 100-999 2N576A 2N574A 2N5731 GTC NJS PPC QS2 SCA 30.000 29.820 32.010 2N5745 2N5730 1-99 2N5769 2N5742 2N572 NJS QS2 SEI Part No. AT 16.000 F 11.430 sc NJS Q52 2N582 GTC NJS Q52 SEI

2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 15 VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ca

LM1203 can directly drive the LM2419 without sacrifice in bandwidth. However, buffer transistors have been used in our design to illustrate a complete design. The overall response of Figure 13's circuit is similar with or without the buffer transistors. A 2N5770 transistor was selected which has a minimum fT of 900 MHz. Note that for fast fall time, the emitter resistor of the buffer transistor should not be much larger than 330X. AN-861 C1995 National Semiconductor Corporation TL/H/11733 RRD-B30M115/Printed in U. S. A. TL/H/11733 - 1 (a) TL/H/11733 - 2 (b) TL/H/11733 - 3 (c) FIGURE 1. Pulse Response at the Cathode for Figure 13 's Circuit 2 Grids G1 and G2 should also have spark gaps. A 300V and a 1 kV spark gap are recommended for G1 and G2 respectively. The PC board should have separate circuit ground and CRT ground. The board's CRT ground is connected to the CRT's ground pin and also directly connected to the chassis ground. The spark gap's ground return should be to the CRT ground so that hi

100 -- -- 2N5550 NPN HIGH VOLTAGE EBC 160 140 6.0 100 100 60 250 5.0 10 0.25 50 6.0 100 10 -- 2N5551 NPN HIGH VOLTAGE EBC 180 160 6.0 50 120 80 250 5.0 10 0.20 50 6.0 100 8.0 -- 2N5769 NPN SAT SWITCH 40 15 4.5 400 20 40 120 0.35 10 0.50 100 4.0 500 -- 18 2N5770 NPN RF OSC EBC 30 15 3.0 10 15 50 200 1.0 8.0 0.40 10 1.1 800 -- -- 2N5771 PNP SAT SWITCH EBC 15 15 4.5 10 8.0 50 120 0.30 10 0.60 50 3.0 850 -- 20 2N5772 NPN SAT SWITCH EBC 40 15 5.0 500* 20 30 120 0.40 30 0.50 300 5.0 350 -- 28 2N5810 NPN AMPL/SWITCH CBE 35 25 5.0 100 25 60 200 2.0 2.0 0.75 500 15 100 -- -- 2N5811 PNP AMPL/SWITCH CBE 35 25 5.0 100 25 60 200 2.0 2.0 0.75 500 15 100 -- -- EBC Devices are available lead formed, See pages 216 thru 219 for details. Also available in Ammopack or Tape & Reel, See pages 230 thru 235 for details. TO-92-18R 73 w w w. c e n t r a l s e m i . c o m

ness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000A Back Side Metalization Au - 18,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 53,730 PRINCIPAL DEVICE TYPES CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP317 Typical Electrical Characteristics R2 (1-August 2002)

TX 1,6,8 Vin D1 C2 VCC L1 3,4,10 OUTPUT Vout R5 R4 CL D2 5 GND C1 = 0.01m F C2 = 1.0m F C3 = 0.1m F C4 = 0.47m F CL = 12pF (Including Parasitics) C6 = 1.0m F R1 = 7.5K R2 = 7.5K R3 = 10.0K R4 = 34 R5 = 5.1K R6 = 180 D1 = FDH400 D2 = FDH400 L1 = 560nH Q1 = 2N5770 1T-31 CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-1076 CVA2419TX CORPORATION APPLICATION INFORMATION FIGURE 2. CVA2419TX DC Characteristics The CVA2419TX is a high voltage triple CRT driver suitable for VGA, Super VGA, IBM 8514 1280 x 1024 and 1024 x 768 non-interlaced display applications. The CVA2419TX features 80V operation and low power dissipation. The part is housed in the industry standard 11 lead TO-220 molded power package. The heat sink is floating and may be grounded for ease of manufacturing and RFI shielding. Thermal Considerations The transfer characteristics of the amplifier are shown in Figure 2. Since this is a class A input stage, power supply current increases

Vbias L1 3,4,10 Vout R5 VC C OUTPUT R4 CL D2 5 GND C1 = 0.01 F C2 = 0.01 F C3 = 0.1 F C4 = 0.47 F C L = 12pF (Including Parasitics) C6 = 1.0 F CALOGIC D1 C2 R1 = 8.2k R2 = 2.7k R3 = 10.0K R4 = 34 R5 = 1.5k R6 = 150 D1 = FDH400 D2 = FDH400 L1 = 560nH Q1 = 2N5770 CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-1076 CVA2415 CORPORATION APPLICATION INFORMATION FIGURE 2. CVA2415 DC Characteristics OUTPUT VOLTAGE (VOLTS) Thermal Considerations The transfer characteristics of the amplifier are shown in Figure 2. Since this is a class A input stage, power supply current increases as the input signal increases and consequently power dissipation also increases. Average dissipation per stage is 1.8W, increasing to 3.2W at minimum output voltage. The CVA2415 cannot be used without heat sinking. Figure 2 shows the power dissipated in each channel over the operating voltage range of the device, Typical "average" power dissipation with the device output voltage

8 VIN D1 L1 3,4,10 VOUT R5 C2 VCC OUTPUT R4 CL D2 5 GND C1 = 0.01m F C2 = 0.01m F C3 = 0.1m F C4 = 0.47m F CL = 12pF (Including Parasitics) C6 = 1.0m F R1 = 8.2kW R2 = 2.7kW R3 = 10.0KW R4 = 34W R5 = 1.5kW R6 = 150W D1 = FDH400 D2 = FDH400 L1 = 560nH Q1 = 2N5770 1H-33 CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025 CVA2417TX CORPORATION APPLICATION INFORMATION FIGURE 2. CVA2417TX DC Characteristics The CVA2417TX is a high voltage triple CRT driver suitable for VGA, Super VGA, IBM(R) 8514, 1280 x 1024 and 1024 x 768 non-interlaced display applications. The CVA2417TX features 80V operation and low power dissipation. The part is housed in the industry standard 11 lead TO-220 molded power package. The heat sink is floating and may be grounded for ease of manufacturing and RFI shielding. Thermal Considerations The transfer characteristics of the amplifier are shown in Figure 2. Since this is a class A input stage, power supply current incre

at VP-P = 100V FIGURE 1. TEST CIRCUIT VCC C6 C2 D1 1 11 V CC Vbias CVA24150T 2 Vin 3 33 L1 8,9 OUTPUT Vout 4,5 R2 D2 R1 CL 22 82pF GND TAB C1 = 1.0mF C2 = 1.0m F CL = 10pF (Including Parasitics) R1 = 47W R2 = 5.1KW D1 = FDH400 D2 = FDH400 L1 = 560nH Q1 = 2N5770 1Q-50 CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025 CVA24150T CORPORATION FIGURE 2. APPLICATION CIRCUIT VCC 11 C3 R2 VBIAS D1 1 C1 C2 CVA24150T VIN VIDEO INPUT 2 L VOUT 8,9 C5 SPARK GAP DC BIAS GND TAB 4,5 C7 R3 R4 D2 VPG 3 R1 N.C. = 6,7,10 C4 R1 = 15W R2 = 47W R3 = 47(1/2W)W R4 = 820W C1 = 0.01m F D1, D2 = FHD400 C2 = 100m F L = 150 - 330nH C3 = 0.1m F C4 = 100m F C5 = 2.2m F C7 = 40 - 120pf 1S-01 FIGURE 3. CVA24150T Transfer DC Characteristics 180 12 160 10 140 120 8 VOUT (V) 90 6 80 POWER (W) 100 4 60 40 2 20 0 0 0 0.2 0.5 0.7 1.0 1.2 1.5 1.7 2.0 2.2 2.5 2.7 3.0 3.2 3.5 3.7 4.0 4.2 4.5 4.7 5.0 VOUT POWER VIN (VOLTS) APPLICATION INFORMATION The CVA24150T is a very high volt

8 VIN D1 L1 3,4,10 VOUT R5 C2 VCC OUTPUT R4 CL D2 5 GND C1 = 0.01m F C2 = 0.01m F C3 = 0.1m F C4 = 0.47m F CL = 12pF (Including Parasitics) C6 = 1.0m F R1 = 8.2kW R2 = 2.7kW R3 = 10.0KW R4 = 34W R5 = 1.5kW R6 = 150W D1 = FDH400 D2 = FDH400 L1 = 560nH Q1 = 2N5770 1L-01 CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025 CVA2415TZ CORPORATION APPLICATION INFORMATION FIGURE 2. CVA2415TZ DC Characteristics The CVA2415TZ is a high voltage triple CRT driver suitable for VGA, Super VGA, IBM(R) 8514, 1280 x 1024 and 1024 x 768 non-interlaced display applications. The CVA2415TZ features 80V operation and low power dissipation. The part is housed in the industry standard 11 lead TO-220 molded power package. The heat sink is floating and may be grounded for ease of manufacturing and RFI shielding. Thermal Considerations The transfer characteristics of the amplifier are shown in Figure 2. Since this is a class A input stage, power supply current incre