4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output Features * Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection * Low temperature coefficient of CTR * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) * Rated recurring peak voltage (repetitive) VIORM = 600 VRMS * Thickness through insulation 0.75 mm B 6 C 5 E 4 1 2 3 A (+) C (-) nc V D E 17186 e3 Pb Pb-free * Creepage current resistance according to VDE 0303/IEC 60112 Comparative Tracking Index: CTI 275 * Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Order Information Agency Approvals Description * UL1577, File No. E76222 System Code A, Double Protection * BSI: BS EN 41003, BS EN 60095 (BS415), Certificate number 7081 and 7402 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending *
4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 E 4 * Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection * Low temperature coefficient of CTR 1 2 3 A (+) C (-) NC V D E 18537_4 17201_4 * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) * Rated recurring peak VIORM = 600 VRMS The 4N25V, 4N25GV, 4N35V, 4N35GV series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. (repetitive) * Thickness through insulation 0.4 mm * Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 275 * Rated impulse VIOTM = 6 kV peak DESCRIPTION voltage voltage (transient overvoltage) * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV * Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in APPLICATIONS VDE STANDARDS * Switch-mode power su
4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output Features * Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection * Low temperature coefficient of CTR * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) * Rated recurring peak voltage (repetitive) VIORM = 600 VRMS * Thickness through insulation 0.75 mm B 6 C 5 E 4 1 2 3 A (+) C (-) nc V D E 17186 e3 Pb Pb-free * Creepage current resistance according to VDE 0303/IEC 60112 Comparative Tracking Index: CTI 275 * Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Order Information Agency Approvals Description * UL1577, File No. E76222 System Code A, Double Protection * BSI: BS EN 41003, BS EN 60095 (BS415), Certificate number 7081 and 7402 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending *
4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output Features * Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection * Low temperature coefficient of CTR * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) * Rated recurring peak voltage (repetitive) VIORM = 600 VRMS * Thickness through insulation 0.75 mm * Creepage current resistance according to VDE 0303/IEC 60112 Comparative Tracking Index: CTI 275 * Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV B 6 C 5 E 4 1 2 3 A (+) C (-) nc V D E 17186 Order Information Part Remarks 4N25GV CTR > 20 % wide lead spacing, DIP-6 4N35GV CTR > 100 % wide lead spacing, DIP-6 4N25V CTR > 20 %, DIP-6 4N35V CTR > 100 %, DIP-6 For additional order information see Option Section Agency Approvals * UL 1577 Recognized, File No. E76222 - Double Protection * BSI: BS EN 41003, BS EN 6009
4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 * Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection E 4 * Low temperature coefficient of CTR 1 2 * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) 3 * Rated recurring peak VIORM = 600 VRMS A (+) C (-) NC voltage (repetitive) * Thickness through insulation 0.75 mm * Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 275 V D E 17186 * Rated impulse VIOTM = 6 kV peak voltage (transient overvoltage) * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV DESCRIPTION The 4N25V/4N25GV/4N35V/4N35GV series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safet
4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 * Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection E 4 * Low temperature coefficient of CTR 1 2 * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) 3 * Rated recurring peak VIORM = 600 VRMS A (+) C (-) NC voltage (repetitive) * Thickness through insulation 0.75 mm * Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 275 V D E 17186 * Rated impulse VIOTM = 6 kV peak voltage (transient overvoltage) * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV DESCRIPTION The 4N25V/4N25GV/4N35V/4N35GV series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safet
4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 E 4 * Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection * Low temperature coefficient of CTR 1 2 3 A (+) C (-) NC V D E 18537_4 17201_4 * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) * Rated recurring peak VIORM = 600 VRMS The 4N25V, 4N25GV, 4N35V, 4N35GV series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. (repetitive) * Thickness through insulation 0.4 mm * Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 275 * Rated impulse VIOTM = 6 kV peak DESCRIPTION voltage voltage (transient overvoltage) * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV * Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in APPLICATIONS VDE STANDARDS * Switch-mode power su
4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output Features * Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection * Low temperature coefficient of CTR * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) * Rated recurring peak voltage (repetitive) VIORM = 600 VRMS * Thickness through insulation 0.75 mm * Creepage current resistance according to VDE 0303/IEC 60112 Comparative Tracking Index: CTI 275 * Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV Agency Approvals * UL 1577 Recognized, File No. E76222 - Double Protection * BSI: BS EN 41003, BS EN 60095 (BS415), Certificate number 7081 and 7402 * DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending * VDE related features: * FIMKO (SETI): EN 60950, Certificate No. 12399 Applications B 6 C 5 E 4 1 2 3 A (+) C (-) nc V D E 17186 Order Information Part Remarks 4N25GV CTR > 20 % w
4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 * Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection E 4 * Low temperature coefficient of CTR * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) 1 2 3 * Rated recurring peak VIORM = 600 VRMS A (+) C (-) nc voltage (repetitive) * Thickness through insulation 0.75 mm * Creepage current resistance according to VDE 0303/ IEC 60112 Comparative Tracking Index: CTI 275 V D E * Rated impulse VIOTM = 6 kV peak 17186 voltage (transient overvoltage) * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV DESCRIPTION * Lead (Pb)-free component The 4N25V/4N25GV/4N35V/4N35GV series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input a
4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 E 4 * Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection * Low temperature coefficient of CTR 1 2 3 A (+) C (-) NC V D E 18537_4 17201_4 * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) * Rated recurring peak VIORM = 600 VRMS The 4N25V, 4N25GV, 4N35V, 4N35GV series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. (repetitive) * Thickness through insulation 0.4 mm * Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 275 * Rated impulse VIOTM = 6 kV peak DESCRIPTION voltage voltage (transient overvoltage) * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV * Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in APPLICATIONS VDE STANDARDS * Switch-mode power su
4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 E 4 * Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection * Low temperature coefficient of CTR 1 2 3 A (+) C (-) NC V D E 18537_4 17201_4 * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) * Rated recurring peak VIORM = 600 VRMS The 4N25V, 4N25GV, 4N35V, 4N35GV series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. (repetitive) * Thickness through insulation 0.4 mm * Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 275 * Rated impulse VIOTM = 6 kV peak DESCRIPTION voltage voltage (transient overvoltage) * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV * Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in APPLICATIONS VDE STANDARDS * Switch-mode power su
matic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore extra low coupling capacity typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR Order Schematic Part Numbers 4N25V/ 4N25GV/ 4N25VS/ 4N25GVS 4N35V/ 4N35GV/ 4N35VS/ 4N35GVS Suffix: CTR-Ranking >20% >100% G = Leadform 10.16 mm S = Waterproofed device Remarks A waterproof construction is recommended for couplers where a pure water cleaning process is used instead of a standard-soldering/ cleaning process. In this case please order the part numbers with the suffix "S". The waterproof construction corresponds with the coupling system "S", and does not belong to the part number itself. Pin Connection B C E 6 5 4 1 2 3 A (+) C (-) n.c. This coupling system indicator "A" or "S" is in a separate (second) line of the marking. 2 (12) 95 10805 Standard parts are marked with the letter "A". TELEFUNKEN Semiconductors Rev. A1, 03-Jun-96 4N25V(G)/ 4N35V(G) Series Absolute Maximum Ratings Input
ex: CTI = 275 Special construction: therefore extra low coupling capacity typical 0.2 pF, high Common Mode Rejection Thickness through insulation 0.75 mm Low temperature coefficient of CTR Order Schematic Part Numbers 4N25V/ 4N25GV/ 4N25VS/ 4N25GVS 4N35V/ 4N35GV/ 4N35VS/ 4N35GVS G = Leadform 10.16 mm S = Waterproofed device Remarks For those couplers, where instead of standard soldering/ cleaning process a pure water cleaning process is being used, we suggest our waterproofed construction. In this case please order the part numbers with the suffix "S". The waterproofed construction, corresponding with the coupling system "S", and does not belong to the part number itself. Pin Connection B C E 6 5 4 1 2 3 A (+) C (-) n.c. 95 10805 Suffix: CTR-Ranking >20% >100% Standard parts are marked with the letter "A". This coupling system indicator "A" or "S" is in a separate (second) line of the marking. 2 (10) Rev. A1: 19.09.1995 TELEFUNKEN Semiconductors 4N25V(G)/ 4N35V(G) Series Absolute Max
94-VO Pollution degree 2 (DIN/VDE 0110 part 1 resp. IEC 664) Climatic classification 55/100/21 (IEC 68 part 1) Special construction: Therefore extra low coupling capacity typical 0.2 pF, high Common Mode Rejection Low temperature coefficient of CTR 4N35V/ 4N35GV/ 4N35VS/ 4N35GVS Suffix: G = Leadform 10.16 mm S = Waterproofed device Remarks A waterproof construction is recommended for couplers where a pure water cleaning process is used instead of a standard-soldering/ cleaning process. In this case please . order the part numbers with the suffix S. The waterproof construction corresponds with the coupling system S, and does not beloiig to the part number itself. Standard parts are marked with the letter A. This coupling system indicator A or S is in a separate (second) line of the marking. Pin Connection B c GP CLe Pal 95 TOROS 96 Me 46920096 0014331 STO TELEFUNKEN Semiconductors Rev. Al, 03-Jun-96TEMIC 4N25V(G)/ 4N35V(G) Series Absolute Maximum Ratings Input (Emitter) Reverse Forwar
UPLER 3 69 4 4N32S(4N32) OPTOCOUPLER, SYSTEM A,DARLINGTON,W.BASE COUPLER 3 69 4 4N33 OPTOCOUPLER, SYSTEM A,DARLINGTON,W.BASE COUPLER 3 69 4 4N33S(4N33) OPTOCOUPLER, SYSTEM A,DARLINGTON,W.BASE COUPLER 3 69 4 4N35 OPTOCOUPLER, SYSTEM A,W.BASE COUPLER 3 69 4 4N35GV OPTOCOUPLER, SYSTEM A,W.BASE COUPLER 3 69 4 4N35GVS(4N35GV) OPTOCOUPLER, SYSTEM A,W.BASE COUPLER 3 69 4 4N35S(4N35) OPTOCOUPLER, SYSTEM A,W.BASE COUPLER 3 69 4 4N35V OPTOCOUPLER, SYSTEM A,W.BASE COUPLER 3 69 4 4N35VS(4N35V) OPTOCOUPLER, SYSTEM A,W.BASE COUPLER 3 69 4 4N36 OPTOCOUPLER, SYSTEM A,W.BASE COUPLER 3 69 4 4N36S(4N36) OPTOCOUPLER, SYSTEM A,W.BASE COUPLER 3 69 4 4N37 OPTOCOUPLER, SYSTEM A,W.BASE COUPLER 3 69 4 4N37S(4N37) OPTOCOUPLER, SYSTEM A,W.BASE COUPLER 3 69 4 4N38A OPTOCOUPLER, SYSTEM A,W.BASE COUPLER 3 69 4 4N38AS(4N38A) OPTOCOUPLER, SYSTEM A,W.BASE COUPLER 3 69 4 54141008 LED SMD ORANGE PLCC2 PACKAGE LED 8 313 8 54141012 LED SMD YELLOW PLCC2 PACKAGE LED 8 313 8 TEMIC Semiconductors 07.97 Technolog