BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Value Units 50 30 V V 45 25 V V Collector-Emitter Voltage : BC337 : BC338 VCEO VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Test Condition IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC337 : BC338 IC=0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 ICES Collector Cut-off Current : BC337 : BC338 VCE=45V, IB=0 VCE=25V, IB=0 BVCES Min. Typ. Max. Units 45 25 V V 50 30 V V 5 V 2 2 100 60 100 100 nA nA 630 hFE1 hFE2 DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=300mA VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA

BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Value Units 50 30 V V 45 25 V V Collector-Emitter Voltage : BC337 : BC338 VCEO VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Test Condition IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC337 : BC338 IC=0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 ICES Collector Cut-off Current : BC337 : BC338 VCE=45V, IB=0 VCE=25V, IB=0 BVCES Min. Typ. Max. Units 45 25 V V 50 30 V V 5 V 2 2 100 60 100 100 nA nA 630 hFE1 hFE2 DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=300mA VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA

91 BC327,-16,-25 BC328,-16,-25 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 100 100 160 40 -- -- -- -- 630 250 400 -- Unit ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE -- BC327/BC328 BC327-16/BC328-16 BC327-25/BC328-25 (IC = -300 mA, VCE = -1.0 V) Base-Emitter On Voltage (IC = -300 mA, VCE = -1.0 V) VBE(on) -- -- -1.2 Vdc Collector - Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) -- -- -0.7 Vdc Cob -- 11 -- pF fT -- 260 -- MHz SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = -10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current - Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 P(pk) SINGLE PULSE 0.01 0.03 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.01 0.001 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME

Inc. 1996 IEBO Vdc nAdc nAdc 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max 100 100 160 40 -- -- -- -- 630 250 400 -- Unit ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE -- BC327/BC328 BC327-16/BC328-16 BC327-25/BC328-25 (IC = -300 mA, VCE = -1.0 V) Base-Emitter On Voltage (IC = -300 mA, VCE = -1.0 V) VBE(on) -- -- -1.2 Vdc Collector - Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) -- -- -0.7 Vdc Cob -- 11 -- pF fT -- 260 -- MHz SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = -10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current - Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 P(pk) SINGLE PULSE 0.01 0.03 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.01 0.001 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME

BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Value Units 50 30 V V 45 25 V V Collector-Emitter Voltage : BC337 : BC338 VCEO VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Test Condition IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC337 : BC338 IC=0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 ICES Collector Cut-off Current : BC337 : BC338 VCE=45V, IB=0 VCE=25V, IB=0 BVCES Min. Typ. Max. Units 45 25 V V 50 30 V V 5 V 2 2 100 60 100 100 nA nA 630 hFE1 hFE2 DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=300mA VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.7 V

Inc. 1996 IEBO Vdc nAdc nAdc 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 100 100 160 40 -- -- -- -- 630 250 400 -- Unit ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE -- BC327/BC328 BC327-16/BC328-16 BC327-25/BC328-25 (IC = -300 mA, VCE = -1.0 V) Base-Emitter On Voltage (IC = -300 mA, VCE = -1.0 V) VBE(on) -- -- -1.2 Vdc Collector - Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) -- -- -0.7 Vdc Cob -- 11 -- pF fT -- 260 -- MHz SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = -10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current - Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 P(pk) SINGLE PULSE 0.01 0.03 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.01 0.001 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME

BC327/BC328 PNP General Purpose Transistor COLLECTOR P b Lead(Pb)-Free 1 TO-92 2 BASE 1 3 2 EMITTER 3 Maximum Ratings(TA=25C unless otherwise noted) Symbol BC327 BC328 Unit Collector-Base voltage VCBO -50 -30 V Collector-Emitter voltage VCEO -45 -25 V Emitter-Base voltage VEBO -5.0 -5.0 V Rating Collector Current Continuous lC 800 mA Total Device Dissipation Alumina Substrate,TA=25C PD 625 mW/C Operating Junction Temperature Range TJ -55 to +150 C Tstg -55 to +150 C Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max BC327 BC328 V(BR)CBO -50 -30 - - BC327 BC328 V(BR)CEO -45 -25 - - BC327 BC328 V(BR)EBO -5.0 - - Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=-100A, IE=0 Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IC=-10A, IC=0 WEITRON http://www.weitron.com.tw 1/4 V V Vdc 29-Jun-06 BC327/BC328 ELECTRICAL CHARACTERISTICS(TA=25C unless otherwise noted) (Countinued) Min Typ Characteristics Sy

BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Value Units 50 30 V V 45 25 V V Collector-Emitter Voltage : BC337 : BC338 VCEO VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Test Condition IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC337 : BC338 IC=0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 ICES Collector Cut-off Current : BC337 : BC338 VCE=45V, IB=0 VCE=25V, IB=0 BVCES Min. Typ. Max. Units 45 25 V V 50 30 V V 5 V 2 2 100 60 100 100 nA nA 630 hFE1 hFE2 DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=300mA VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA

/D BC327,-16,-25 BC328,-16,-25 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 100 100 160 40 -- -- -- -- 630 250 400 -- Unit ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE -- BC327/BC328 BC327-16/BC328-16 BC327-25/BC328-25 (IC = -300 mA, VCE = -1.0 V) Base-Emitter On Voltage (IC = -300 mA, VCE = -1.0 V) VBE(on) -- -- -1.2 Vdc Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) -- -- -0.7 Vdc Cob -- 11 -- pF fT -- 260 -- MHz SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = -10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current-Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.03 P(pk) SINGLE PULSE 0.01 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.01 0.001 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t

lC=500mA, l B=50mA VBE(sat) - - 1.2 V fT 210 - - MHz Transition frequency VCE=5V, l C=10mA, f=100MHz - 630 - - hFE Classification Classification 16 25 40 hFE1 100 ~ 250 160 ~ 400 250 ~ 630 hFE2 60- 100- 170- WEITRON http://www.weitron.com.tw 2/3 30-Jun-06 BC327/BC328 Typical Characteristics -20 IC mA , COLLECTOR CURRENT IC mA , COLLECTOR CURRENT -500 mA - 5.0 A I B = - 4.5m = mA IB - 4.0 A I B = - 3.5m A m = IB - 3.0 A I B = - 2.5m mA IB = - 2.0 = IB -400 -300 IB = -200 mA - 1.5 PT = 60 0m IB = - 1.0mA W IB = - 0.5mA -100 IB= -16 IB= -12 -1 -2 -3 -4 A 30A 0A IB = - 2 -4 IB = - 10A -5 -10 V CE = - 2.0V 100 - 1.0V 10 -1 -10 -100 -1000 IC(mA), COLLECTOR CURRENT fT[MHz], GAIN-BANDWIDTH PRODUCT VCE = -1V PULSE -10 -1 -0.5 -0.6 -0.7 -0.8 -0.9 VBE[V], BASE-EMITTER VOLTAGE http://www.weitron.com.tw -10 IC = 10 IB PULSE V CE(sat) -1 -0.1 V BE(sat) -0.01 -0.1 -1 -10 -100 -1000 1000 VCE = -5.0V 100 10 -1 -10 -100 IC[mA], COLLECTOR CURRENT Fig.6 Gain Bandwidth Product Fig.5 Base-Emitter On Voltage WEITRON -5

C328 _ _ ~ 100 Collector Cutoff Current IcES nAdc (Vce = 45V, Veg = 0) BC327 = ~ 100 (VcE = ~25V, Vge = 0) BC328 - _ 100 Emitter Cutoff Current lEBO _ - ~100 nAdc (Vem = 4.0V, Ic = 0} ON CHARACTERISTICS DC Current Gain hrE _ (ic = -100 mA, Voce = ~+1,0 V) BC327/BC328 100 _ 630 BC327-16/BC328-16 100 _ 250 BC327-25/BC328-25 160 _ 400 (ic = 300 mA, Voce = 1.0 V) 40 _ Base-Emitter On Voltage VBE(on) _ -1.2 Vdc {lq = 300 mA, Voce = 1.0 V) Collector-Emitter Saturation Voltage - VCE(sat} - _ =0.7 Vde (I = 500 mA, Ig = 50 mA) SMALL-SIGNAL CHARACTERISTICS Output Capacitance . Cob _ 11 _ pF (Veg = 10V, IE = 0, f = 1.0 MHz) Current-Gain Bandwidth Product fT _- 260 _ MHz (lc = 10 mA, Voce = 5.0 V, f = 100 MHz Motorola SmallSignal Transistors, FETs and Diodes Device Data 2-71BC327,-16,-25 BC32a,-16,-25 FIGURE 1 THERMAL RESPONSE 10 05 03 0.2 eS Ss 0.05 THERMAL RESISTANCE o ee 8 8 rt), NORMALIZED EFFECTIVE TRANSIENT 0.01 0.001 = 0.002 0.005 0.01 0.02 0.05 0.1 >" Byclt) = (Oye Pipky 8jc = 100C Max Byatt) = rit]

0) BC328 _ _ 100 Collector Cutoff Current ICES nAdc (Vce = 45V, Vee = 0) BC327 _ 100 (Voce = 25 V, Vee = 0) BC328 = _ ~ 100 Emitter Cutoff Current lEBo - _ 100 nAdc (Veg = -4.0V, Ic = 0) ON CHARACTERISTICS DC Current Gain hFE _ (I = 100 mA, Veg = ~1.0 V) BC327/BC328 100 _ 630 BC327-16/BC328-16 100 _- 250 BC327-25/BC328-25 160 _- 400 (ic = 300 mA, VcE = 1.0 V) 40 - - Base-Emitter On Voltage VBE(on) _ _ -1.2 Vde {ic = 300 mA, VcE = - 1.0 V) Collector-Emitter Saturation Voltage VcE(sat) - _ ~0.7 Vde (Il = 500 mA, Ig = -50 mA) SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cob _ 1 _ pF (Veg = -10V, Ie = 0,f = 1.0 MHz) Current-Gain Bandwidth Product fr _ 260 _ MHz (Il = 10 mA, Voce = 5.0V, f = 100 MHz Motorola SmallSignal Transistors, FETs and Diodes Device Data 2-71 8C327,-16,-25 BC328,-16,-25 (ce, COLLECTOR CURRENT {mA} Vee, COLLECTOR EMITTER VOLTAGE (Voits) om NJAMALIZED EEEECTINE TRANSIENT THERM A. RE - Ol FIGURE 1 THERMAL RESPONSE yc = tt Bye 8c = 100C Max : Ayalt) = eth Qa SINGLE PULSE =e nfo

le = 0) 8C328 _ _ 100 Collector Cutoff Current ICES nAdc (Vce = 45 V, Vee = 0) BC327 _ _ 100 (Vce = 25 V, Vee = 0) BC328 = _ 100 Emitter Cutoff Current leEBo _ _ 100 nAde (Veg = 4.0 V, I = 0) ON CHARACTERISTICS DC Current Gain re (I = 100 mA, VcE = 1.0 V) BC327/BC328 100 ~ 630 BC327-16/BC328-16 100 - 250 BC327-25/BC328-25 160 _ 400 BC327-40/BC328-40 250 - 630 (ic = 300 mA, VcE = 1.0 V) 40 Base-Emitter On Voltage VBE(on) _- _ 1.2 Vde (Ip = 300 mA, Vcg = 1.0 V) Collector-Emitter Saturation Voltage VcE(sat) _ _ 0.7 Vde (Ic = 500 mA, Ig = 50 mA) SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cob _ 11 _ pF (Vcg = 10V, Ie = 0, f = 1.0 MHz) Current-Gain Bandwidth Product fT _ 260 ~_ MHz {lc = 10 mA, Voce = 5.0 V) MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-90 ic, COLLECTOR CURRENT (mA} Vee, COLLECTOR-EM(TTER VOLTAGE (Volts) ee nt tt tints Penn Ss a EE ren an A Ls ye Rigen oy #0 BC327, -16, -25, -40, BC328, -16, -25, -40 . 7229-22) FIGURE 1 THERMAL RESPONSE . . 7 10 5 07 Bm 95 Zz 2. 93 FS t sz

BC327/BC328 PNP General Purpose Transistor COLLECTOR P b Lead(Pb)-Free 1 TO-92 2 BASE 1 3 2 EMITTER 3 Maximum Ratings(TA=25C unless otherwise noted) Symbol BC327 BC328 Unit Collector-Base voltage VCBO -50 -30 V Collector-Emitter voltage VCEO -45 -25 V Emitter-Base voltage VEBO -5.0 -5.0 V Rating Collector Current Continuous lC 800 mA Total Device Dissipation Alumina Substrate,TA=25C PD 625 mW/C Operating Junction Temperature Range TJ -55 to +150 C Tstg -55 to +150 C Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max BC327 BC328 V(BR)CBO -50 -30 - - BC327 BC328 V(BR)CEO -45 -25 - - BC327 BC328 V(BR)EBO -5.0 - - Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=-100A, IE=0 Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IC=-10A, IC=0 WEITRON http://www.weitron.com.tw 1/4 V V V 29-Jun-06 BC327/BC328 ELECTRICAL CHARACTERISTICS(TA=25C unless otherwise noted) (Countinued) Min Typ Characteristics Symb

BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Value Units 50 30 V V 45 25 V V Collector-Emitter Voltage : BC337 : BC338 VCEO VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Test Condition IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC337 : BC338 IC=0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 ICES Collector Cut-off Current : BC337 : BC338 VCE=45V, IB=0 VCE=25V, IB=0 BVCES Min. Typ. Max. Units 45 25 V V 50 30 V V 5 V 2 2 100 60 100 100 nA nA 630 hFE1 hFE2 DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=300mA VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA