BCV27, BCV47 NPN Silicon Darlington Transistors * For general AF applications 2 3 * High collector current 1 * High current gain * Complementary types: BCV26, BCV46 (PNP) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration Package BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV27 30 BCV47 60 Collector-base voltage Unit VCBO BCV27 40 BCV47 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current, tp 10 ms ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg mA TS 74 C 1 -65 ... 150 2011-10-05 BCV27, BCV47 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 210 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Char
BCV27, BCV47 NPN Silicon Darlington Transistors * For general AF applications * High collector current 2 3 * High current gain 1 * Complementary types: BCV26, BCV46 (PNP) Type Marking Pin Configuration Package BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV27 30 BCV47 60 Collector-base voltage Unit VCBO BCV27 40 BCV47 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS mA TS 74 C -65 ... 150 Value 210 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 2005-12-21 BCV27, BCV47 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC C
BCV27, BCV47 NPN Silicon Darlington Transistors * For general AF applications 2 3 * High collector current 1 * High current gain * Complementary types: BCV26, BCV46 (PNP) * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 Type Marking Pin Configuration Package BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV27 30 BCV47 60 Collector-base voltage Unit VCBO BCV27 40 BCV47 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg mA TS 74 C 1Pb-containing -65 ... 150 package may be available upon special request 1 http://store.iiic.cc/ 2007-04-20 BCV27, BCV47 Thermal Resistance Parameter Junction - soldering point 1) 1For Symbol RthJS Value 210 Unit K/W calculation of RthJA please refe
BCV27; BCV47 NPN Darlington transistors Product specification Supersedes data of 1997 Sep 04 1999 Apr 08 Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47 FEATURES PINNING * Medium current (max. 500 mA) PIN DESCRIPTION * Low voltage (max. 60 V) 1 base * High DC current gain (min. 20000). 2 emitter 3 collector APPLICATIONS * Preamplifier input applications. DESCRIPTION handbook, halfpage 3 NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. 1 3 TR1 TR2 MARKING 1 2 2 MARKING CODE(1) TYPE NUMBER BCV27 FF BCV47 FG MAM298 Top view Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BCV27 - 40 V BCV47 - 80 V BCV27 - 30 V BCV47 - 60 V collector-emitter voltage open b
uestions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET BCV27; BCV47 NPN Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet NPN Darlington transistors BCV27; BCV47 FEATURES PINNING * Medium current (max. 500 mA) PIN DESCRIPTION * Low voltage (max. 60 V) 1 base * High DC current gain (min. 20 000). 2 emitter 3 collector APPLICATIONS * Preamplifier input applications. DESCRIPTION handbook, halfpage NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. 3 1 3 TR1 TR2 MARKING MARKING CODE(1) TYPE NUMBER BCV27 FF* BCV47 FG* 1 2 2 MAM298 Top view Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDE
BCV27, BCV47 NPN Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 (PNP) 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BCV27 BCV47 VCEO 30 60 Collector-base voltage VCBO 40 80 Emitter-base voltage VEBO 10 10 DC collector current IC 500 mA Peak collector current ICM 800 mA Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 74 C Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-12-2001 BCV27, BCV47 Electrical Characteristics at T A = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakd
BCV27, BCV47 NPN Silicon Darlington Transistors * For general AF applications 2 3 * High collector current 1 * High current gain * Complementary types: BCV26, BCV46 (PNP) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration Package BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV27 30 BCV47 60 Collector-base voltage Unit VCBO BCV27 40 BCV47 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current, tp 10 ms ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg mA TS 74 C 1 -65 ... 150 2011-10-05 BCV27, BCV47 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 210 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Char
BCV27, BCV47 NPN Silicon Darlington Transistors * For general AF applications 2 3 * High collector current 1 * High current gain * Complementary types: BCV26, BCV46 (PNP) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration Package BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV27 30 BCV47 60 Collector-base voltage Unit VCBO BCV27 40 BCV47 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current, tp 10 ms ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg mA TS 74 C 1 -65 ... 150 2011-10-05 BCV27, BCV47 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 210 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Char
BCV27; BCV47 NPN Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet NPN Darlington transistors BCV27; BCV47 FEATURES PINNING * Medium current (max. 500 mA) PIN DESCRIPTION * Low voltage (max. 60 V) 1 base * High DC current gain (min. 20 000). 2 emitter 3 collector APPLICATIONS * Preamplifier input applications. DESCRIPTION handbook, halfpage NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. 3 1 3 TR1 TR2 MARKING MARKING CODE(1) TYPE NUMBER BCV27 FF* BCV47 FG* 1 2 2 MAM298 Top view Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCV27 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads BCV47 2004 Jan 13 2 VERSION SOT23 NXP Semiconductors Product data sheet NPN Darlington transistors BCV27; BCV47 LIMITING VALUES
BCV27, BCV47 NPN Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 (PNP) 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BCV27 BCV47 VCEO 30 60 Collector-base voltage VCBO 40 80 Emitter-base voltage VEBO 10 10 DC collector current IC 500 mA Peak collector current ICM 800 mA Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 74 C Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-12-2001 BCV27, BCV47 Electrical Characteristics at T A = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakd
BCV27, BCV47 NPN Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 (PNP) 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BCV27 BCV47 VCEO 30 60 Collector-base voltage VCBO 40 80 Emitter-base voltage VEBO 10 10 DC collector current IC 500 mA Peak collector current ICM 800 mA Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 74 C Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-12-2001 BCV27, BCV47 Electrical Characteristics at T A = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakd
BCV27; BCV47 NPN Darlington transistors Product specification Supersedes data of 1999 Apr 08 2004 Jan 13 Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47 FEATURES PINNING * Medium current (max. 500 mA) PIN DESCRIPTION * Low voltage (max. 60 V) 1 base * High DC current gain (min. 20000). 2 emitter 3 collector APPLICATIONS * Preamplifier input applications. DESCRIPTION handbook, halfpage NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. 3 1 3 TR1 TR2 MARKING MARKING CODE(1) TYPE NUMBER BCV27 FF* BCV47 FG* 1 2 2 MAM298 Top view Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCV27 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads BCV47 2004 Jan 13 2 VERSION SOT23 Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47
BCV27 NPN Darlington Transistor Description C This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from process 05. E SOT-23 Mark: FF B Ordering Information Part Number Marking Package Packing Method BCV27 FF SOT-23 3L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 10 V Collector Current - Continuous 1.2 A -55 to +150 C IC TJ, TSTG Operating and Storage Junction Temperatur
BCV27, BCV47 NPN Silicon Darlington Transistors * For general AF applications 2 3 * High collector current 1 * High current gain * Complementary types: BCV26, BCV46 (PNP) * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 Type Marking Pin Configuration Package BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV27 30 BCV47 60 Collector-base voltage Unit VCBO BCV27 40 BCV47 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg mA TS 74 C 1Pb-containing -65 ... 150 package may be available upon special request 1 2007-04-20 BCV27, BCV47 Thermal Resistance Parameter Junction - soldering point 1) 1For Symbol RthJS Value 210 Unit K/W calculation of RthJA please refer to Application Note
BCV27; BCV47 NPN Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet NPN Darlington transistors BCV27; BCV47 FEATURES PINNING * Medium current (max. 500 mA) PIN DESCRIPTION * Low voltage (max. 60 V) 1 base * High DC current gain (min. 20 000). 2 emitter 3 collector APPLICATIONS * Preamplifier input applications. DESCRIPTION handbook, halfpage NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. 3 1 3 TR1 TR2 MARKING MARKING CODE(1) TYPE NUMBER BCV27 FF* BCV47 FG* 1 2 2 MAM298 Top view Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCV27 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads BCV47 2004 Jan 13 2 VERSION SOT23 NXP Semiconductors Product data sheet NPN Darlington transistors BCV27; BCV47 LIMITING VALUES