BD235 BD237 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Halogen free available upon request by adding suffix "-HF" Power Dissipation: PCM =1.25W, Ta=25 Collector Current : IC=2A Complement to BD234/236/238 respectively Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Marking: Type Number NPN Plastic-Encapsulate Transistors Maximum Ratings* Symbol Rating Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Collector-Emitter Voltage VCER VEBO IC ICP PC TJ TSTG K A BD233 BD235 BD237 BD233 BD235 BD237 BD233 BD235 BD237 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation ( TC=25) Operating Junction Temperature Storage Temperature Rating 45 60 80 45 60 100 45 60 100 5 2 6 25 150 -65 to +150 N Unit V D E V M B V V A A W 1 2 3 L G Electrical Characteristics @ 25OC Unless Otherwise Specif
1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: PBT FLAMMABILITY RATING UL94-V0 COLOUR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRONZE NI PLATED QUALITY CLASS: 500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -25 C UP TO 85 C COMPLIANCE: LEAD FREE AND ROHS ELECTRICAL CURRENT RATING: 1.5 A WORKING VOLTAGE: 120 VAC INSULATION RESISTANCE: >500 MOHM DIELECTRIC WITHSTANDING VOLTAGE: 1 000 VAC/MN CONTACT RESISTANCE: 20 mOHM MAX SYSTEM APPLICATION: CAT 5 COMPATIBLE B STANDARD CERTIFIED: E324776 / MODEL NUMBER 615-HStd SOLDERING WAVE PROCESS ONLY PACKAGING TRAY C RoHS Compliant PROJECTION: G F GENERAL TOLERANCE .X = +/- 0.2 .XX = +/- 0.15 E D 09-SEP-13 DWG REVIEW QL C B 22-MAR-11 06-OCT-09 CAT 5 UL STANDARD GG JP A 20-JUN-08 PDF REV DATE FILE SCALE: DESCRIPTION: HORIZONTAL SHIELDED 3.05mm REAR GROUNDING POST 8P8C MODULAR JACK TAB DOWN CH SHEET: 1/1 WERI PART NO: 615 008 142 621 BY DRAW: APPROVAL: RJ UNIT: MM SIZE A4 D
EMCL12N2J-80.157M RoHS Pb EMCL12 N 2 J -80.157M Series RoHS Compliant (Pb-free) 2.5V 6 Pad 5mm x 7mm Plastic SMD LVPECL MEMS Oscillator Nominal Frequency 80.157MHz Frequency Tolerance/Stability 25ppm Maximum over -20C to +70C Logic Control / Additional Output Standby (ST) and Complementary Output Duty Cycle 50 5(%) ELECTRICAL SPECIFICATIONS Nominal Frequency 80.157MHz Frequency Tolerance/Stability 25ppm Maximum over -20C to +70C (Inclusive of all conditions: Calibration Tolerance at 25C, Frequency Stability over the Operating Temperature Range, Supply Voltage Change, Output Load Change, 1st Year Aging at 25C, Reflow, Shock, and Vibration) Aging at 25C 1ppm First Year Maximum Supply Voltage +2.5Vdc 0.125Vdc Input Current 75mA Maximum (Excluding Load Termination Current) Output Voltage Logic High (Voh) 1.55Vdc Typical, Vcc-1.025Vdc Minimum Output Voltage Logic Low (Vol) 0.80Vdc Typical, Vcc-1.62Vdc Maximum Rise/Fall Time 150pSec Typical, 300pSec Maximum (Measured over 20% to 80% of waveform) Duty Cycle 50 5(%)
EMK23G2H-5.5296M TR RoHS Pb EMK23 G 2 H -5.5296M TR Series RoHS Compliant (Pb-free) 4 Pad 3.2mm x 5mm SMD 3.3Vdc LVCMOS MEMS Oscillator Packaging Options Tape & Reel Frequency Tolerance/Stability 100ppm Maximum over -40C to +85C Duty Cycle 50 5(%) Nominal Frequency 5.5296MHz Output Control Function Tri-State (Disabled Output: High Impedance) ELECTRICAL SPECIFICATIONS Nominal Frequency 5.5296MHz Frequency Tolerance/Stability 100ppm Maximum over -40C to +85C (Inclusive of all conditions: Calibration Tolerance at 25C, Frequency Stability over the Operating Temperature Range, Supply Voltage Change, Output Load Change, First Year Aging at 25C, 260C Reflow, Shock, and Vibration) Aging at 25C 1ppm Maximum First Year Operating Temperature Range -40C to +85C Supply Voltage 3.3Vdc 10% Input Current 20mA Maximum Output Voltage Logic High (Voh) 90% of Vdd Minimum (IOH=-8mA) Output Voltage Logic Low (Vol) 10% of Vdd Maximum (IOL=+8mA) Rise/Fall Time 2nSec Maximum (Measured from 20% to 80% of waveform) Duty Cycle 50 5(%) (
EH2545ETTS-106.250M TR EH25 45 ET RoHS Pb TS -106.250M TR Series RoHS Compliant (Pb-free) 5.0V 4 Pad 5mm x 7mm Ceramic SMD HCMOS/TTL High Frequency Oscillator Packaging Options Tape & Reel Nominal Frequency 106.250MHz Frequency Tolerance/Stability 50ppm Maximum Operating Temperature Range -40C to +85C Pin 1 Connection Tri-State (High Impedance) Duty Cycle 50 10(%) ELECTRICAL SPECIFICATIONS Nominal Frequency 106.250MHz Frequency Tolerance/Stability 50ppm Maximum (Inclusive of all conditions: Calibration Tolerance at 25C, Frequency Stability over the Operating Temperature Range, Supply Voltage Change, Output Load Change, First Year Aging at 25C, Shock, and Vibration) Aging at 25C 5ppm/year Maximum Operating Temperature Range -40C to +85C Supply Voltage 5.0Vdc 10% Input Current 50mA Maximum (No Load) Output Voltage Logic High (Voh) 2.4Vdc Minimum with TTL Load, Vdd-0.4Vdc Minimum with HCMOS Load (IOH= -16mA) Output Voltage Logic Low (Vol) 0.4Vdc Maximum with TTL Load, 0.5Vdc Maximum with HCMOS Load (IOH= +16mA)
EMK43G2J-33.178M TR RoHS Pb EMK43 G 2 J -33.178M TR Series RoHS Compliant (Pb-free) 4 Pad 2mm x 2.5mm SMD 3.3Vdc LVCMOS MEMS Oscillator Packaging Options Tape & Reel Frequency Tolerance/Stability 100ppm Maximum over -40C to +85C Duty Cycle 50 5(%) Nominal Frequency 33.178MHz Output Control Function Power Down (Disabled Output: Logic Low) ELECTRICAL SPECIFICATIONS Nominal Frequency 33.178MHz Frequency Tolerance/Stability 100ppm Maximum over -40C to +85C (Inclusive of all conditions: Calibration Tolerance at 25C, Frequency Stability over the Operating Temperature Range, Supply Voltage Change, Output Load Change, First Year Aging at 25C, 260C Reflow, Shock, and Vibration) Aging at 25C 1ppm Maximum First Year Operating Temperature Range -40C to +85C Supply Voltage 3.3Vdc 10% Input Current 25mA Maximum Output Voltage Logic High (Voh) 90% of Vdd Minimum (IOH=-8mA) Output Voltage Logic Low (Vol) 10% of Vdd Maximum (IOL=+8mA) Rise/Fall Time 2nSec Maximum (Measured from 20% to 80% of waveform) Duty Cycle 50 5(%) (Meas
DF2S12FU TOSHIBA Diodes for Protecting against ESD DF2S12FU Unit: mm Product for Use Only as Protection against Electrostatic Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z Two-pin ultra-small packages are suitable for higher mounting densities. z Small total capacitance: CT = 15pF (typ.) z Zener voltage correspond to E24 series. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Power dissipation P 150 mW Junction temperature Tj 125 C Tstg -55 to 125 C Storage temperature range USC JEDEC JEITA 1-1E1A TOSHIBA Weight: 4.5 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are with
VTA400 Diodes Silicon Rectifier Military/High-RelN I(O) Max.(A) Output Current25 @Temp (oC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.250 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)25 @Temp. (oC) (Test Condition)25# I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition)400 I(RM) Max.(A) Pk. Rev. Current5.0m @Temp. (oC) (Test Condition)150# Maximum Operating Temp (oC)150 Package StylePress-19 Mounting StyleT Description
IDT54/74FCT139T/AT/CT FAST CMOS DUAL 1-OF-4 DECODER WITH ENABLE MILITARY AND COMMERCIAL TEMPERATURE RANGE FAST CMOS 1-OF-4 DECODER WITH ENABLE DESCRIPTION: FEATURES: - - - - - - - - - - IDT54/74FCT139T/AT/CT Std., A and C speed grades Low input and output leakage 1 A (max.) Extended commercial range of -40C to +85C CMOS power levels True TTL input and output compatibility * VOH = 3.3V (typ.) * VOL = 0.3V (typ.) High drive outputs (-15mA IOH, 48mA IOL) Meets or exceeds JEDEC standard 18 specifications Product available in Radiation Tolerant and Radiation Enhanced versions Military product compliant to MIL-STD-883, Class B and DESC listed (dual marked) Available in DIP, SOIC, QSOP, CERPACK and LCC packages The IDT54/74FCT139T/AT/CT are dual 1-of-4 decoders built using an advanced dual metal CMOS technology. These devices have two independent decoders, each of which accept two binary weighted inputs (A0A1) and provide four mutually exclusive active low outputs (O0-O3). Each decoder has an active low enable (E).
Metal Alloy Inductors (R) FCUL1040 Low core loss type Recommended patterns Inductance Range: 0.18~0.42H (Unit: mm) Tolerance0.3 (Unit: mm) FEATURES 11.5 10.0mm square and 4.0mm Max. height. Magnetically shielded construction, low DC resistance. Suitable for large current The use of low loss iron powder ensure capability for high efficiency. Low audible core noise. Ideal for DC-DC converter applications RoHS compliant. Halogen Free. TOKO STANDARD PART NUMBERS 11.5 10.0mm 4.0mm Max. DC-DC RoHS, TYPE FCUL1040 (Quantity/reel; 500 PCS) (1) TOKO Part Number Inductance (H) FCUL1040-H-R18M FCUL1040-H-R36M FCUL1040-H-R42M (1) 0.18 0.36 0.42 (2) (3) Tolerance (%) DC (2) Resistance (m) Tolerance 7% Inductance (3) Decrease Current (A) Max. (Typ.) L L =30% 20 20 20 0.54 0.82 1.02 53 (70) 36 (48) 34 (45) (4) Temperature (4) Rise Current T=40C (A) Max. (Typ.) 38 (45) 31 (36) 30 (35) Dimension (mm) A 3.9 3.9 3.5 (1) Inductance is measured with a LCR meter 4284A (Agilent Technologies) or equivalent. Test frequency at 100kHz (
Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM21B5C1H203JA01p (0805, C0G, 20000pF, 50Vdc) p: packaging code RoHS regulation conformity parts g e T e L W (in mm) Dimensions Packaging Length L 2.0 mm0.1mm Code Packaging Minimum Quantity Width W 1.25mm0.1mm L 180mm Embossed Tape 3000 Thickness T 1.25mm0.1mm K 330mm Embossed Tape 10000 Electrode e 0.2 to 0.7mm C Bulk Case 5000 Electrode Gap g (min.) 0.7mm B Bulk(Bag) 1000 Rated Value Specifications Murata PN Code Spec Temperature Char. 5C C0G (EIA), 030ppm/C Capacitance 203 20000pF Capacitance Tol. J 5% Rated Voltage 1H 50Vdc Please refer to 'GRM Series Specification and Test Methods (1)' PDF file. o This data sheet is applied for CHIP MONOLITHIC CERAMIC CAPACITOR used for General Electronics equipment for your design.
o Solderability of Tin plating termination chip might be deteriorated when low temperature soldering profile where peak solder temperature is below the Tin melting point is used. Please confirm the
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BD235 BD237 NPN power transistors Features . NPN transistors Applications Audio, power linear and switching application Description 3 The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD236 and BD238 respectively. Table 1. 2 1 SOT-32 (TO-126) Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging BD235 BD237 BD235 BD237 SOT-32 SOT-32 Tube Tube July 2007 Rev 2 1/9 www.st.com 9 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Value Parameter Unit BD235 BD237 VCBO Collector-base voltage (IE = 0) 60 100 V VCER Collector-emitter voltage (RBE = 1K) 60 100 V VCEO Collector-emitter voltage (IB = 0) 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 2 A ICM Collector peak current (tp < ms) 6 A PTOT Total dissipation at Tcase =
ICS VB = 24 V (DC); Ts = 25 C; unless otherwise specified. SYMBOL PARAMETER IB CONDITIONS supply current TYP. MAX. UNIT output stage ON 11 - mA output stage OFF 1.5 - mA Vd voltage drop IO = 250 mA 1 1.5 V d detection distance coil M5 0.8 - mm MBD233 1.0 MBD235 1.0 d (mm) d (mm) d off d off 0.9 0.9 d on d on 0.8 0.8 20 0 20 40 80 60 Ts Fig.2 6 (o C) Fig.3 Switching distance as a function of the substrate temperature. January 1994 4 12 18 24 V (V) 30 B Switching distance as a function of the DC supply voltage. Philips Semiconductors Preliminary specification Hybrid integrated circuits for inductive proximity detectors OM3105P MBD234 400 I O max (mA) 350 300 250 200 150 20 Fig.4 0 20 40 60 80 Ts (o C) Overload protection as a function of the substrate temperature. MOUNTING RECOMMENDATIONS Potting recommendations General First cover the hybrid IC with about 0.5 mm of silicone rubber, let it harden and with the parts inserted in the tube, fill up the tube with epoxy. If a protective cap is incorporat
Order this document by MUR3040/D SEMICONDUCTOR TECHNICAL DATA . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * Motorola Preferred Device Ultrafast 100 Nanosecond Recovery Time 175C Operating Junction Temperature High Voltage Capability to 400 Volts Low Forward Voltage Drop High Temperature Glass Passivated Junction ULTRAFAST RECTIFIERS 30 AMPERES 400 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 4.3 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped 30 Units Per Plastic Tube * Marking: U3040 4 1 1 4 3 3 CASE 340E-02, STYLE 1 MAXIMUM RATINGS Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 400 Volts Average Rectified Forward Current TC = 70C IF(AV) 30 Amps Peak Repetitive Fo