2N5339 2N5339 2N5339 2N5339 2N5339 BUV20 BDW51C BDW51C 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 2N5884 2N5884 2N5339 BFX34 BFX34 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 BDW52C BDW52C BDW52C BDW51C BDW51C BDW51C 2N4920 2N4920 2N4920 BD235 BD235 BD237 2N5339 2N5339 2N5339 2N5339 2N3055 2N3055 2N3055 1/35 Bipolar Transistors Cross Reference INDUSTY STANDARD 2N5037 2N5038 2N5039 2N5068 2N5069 2N5083 2N5085 2N5148 2N5150 2N5152 2N5153 2N5154 2N5157 2N5190 2N5191 2N5192 2N5193 2N5194 2N5195 2N5240 2N5241 2N5264 2N5284 2N5285 2N5293 2N5294 2N5295 2N5297 2N5298 2N5298 2N5301 2N5302 2N5303 2N5333 2N5334 2N5335 2N5336 2N5337 2N5338 2N5339 2N5346 2N5347 2N5348 2N5349 2N5386 2N5387 2N5388 2N5389 2N5415 2N5416 2N5466 2N5467 2/35 ST REPLACEMENT ST NEAREST PREFERRED 2N3055 2N5038 2N5153 2N5154 2N5038 BDW51C BDW51C 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 BUX48A 2N5191 2N5191 2N5192 2N5193 2N5195 2N5195 BUX48A BUX48A BUX98 2N5339 2N5339 TIP31C TIP31C TIP31C TIP31C TIP31C TIP3
BD235 BD237 SbE D MM 71108264 o042854 725 ME PHIN 7-33-07 PHILIPS INTERNATIONAL SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors ina SOT-32 plastic envelope intended for use in television and audio amplifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs can be supplied. QUICK REFERENCE DATA BD233 | BD235 | BD237 Collector-base voltage (open emitter) VcBO max. Collector-emitter voltage {open base} VCEO max. Collector-emitter voltage (RgE = 1 kQ) VcER max. Collector current (peak value} lom max. Total power dissipation up to Tmp = 25 OC Prot max. Junction temperature Tj max. D.C. current gain Ic=1A;Vep=2V hee > 25 Transition frequency Ic = 250 mA; Voce = 10 V iT > 3 MHz MECHANICAL DATA Dimensions in mm Fig. 1 TO-126 (SOT-32). 2 7,8 max} Collector connected to metal part of mounting surface ; | een 375 | 3,2 _| uy 3,0 1 = emitter | "4 ] max 2 = collector | 3 = base 1 i 7 2,54 l tf. dL. 12 c 15,3 min | 0,88 . Le < Pinning
BD235 BD237 NPN power transistors Features . NPN transistors Applications Audio, power linear and switching application Description 3 The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD236 and BD238 respectively. Table 1. 2 1 SOT-32 (TO-126) Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging BD235 BD237 BD235 BD237 SOT-32 SOT-32 Tube Tube July 2007 Rev 2 1/9 www.st.com 9 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Value Parameter Unit BD235 BD237 VCBO Collector-base voltage (IE = 0) 60 100 V VCER Collector-emitter voltage (RBE = 1K) 60 100 V VCEO Collector-emitter voltage (IB = 0) 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 2 A ICM Collector peak current (tp < ms) 6 A PTOT Total dissipation at Tcase =
36 2N5037 2N5038 2N5039 2N5068 2N5069 2N5083 2N5085 2N5148 2N5150 2N5152 2N5153 2N5154 2 / 47 SGS-THOMSON replacement SGS-THOMSON nearest preferred BFX34 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 BDW52C BDW52C BDW52C BDW51C BDW51C BDW51C BD238 BD238 BD238 BD235 BD235 BD237 2N5339 2N5339 2N5339 2N5339 2N3055 2N3055 2N3055 2N3055 2N5038 2N5038 BDW51C BDW51C 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 BFX34 Industry standard 2N5157 2N5190 2N5191 2N5192 2N5193 2N5194 2N5195 2N5240 2N5241 2N5264 2N5284 2N5285 2N5293 2N5294 2N5295 2N5297 2N5298 2N5298 2N5301 2N5302 2N5303 2N5333 2N5334 2N5336 2N5337 2N5338 2N5339 2N5346 2N5347 2N5348 2N5349 2N5386 2N5387 2N5388 2N5389 2N5415 2N5416 2N5466 SGS-THOMSON replacement SGS-THOMSON nearest preferred BUX48A 2N5191 2N5191 2N5192 2N5195 2N5195 2N5195 BUX48A BUX48A BUX98A 2N5339 2N5339 TIP31C TIP31C TIP31C TIP31C TIP31C TIP31C 2N5886 2N5886 2N5886 BSS44 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5038 2N6547 2N6547 2N6547 2N5415 2N54
BD235 BD237 Low voltage NPN power transistors Features Low saturation voltage NPN transistors Applications Audio, power linear and switching applications 3 1 SOT-32 (TO-126) Description The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD238. Table 1. 2 Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging BD235 BD235 SOT-32 Tube BD237 BD237 SOT-32 Tube June 2009 Doc ID 4189 Rev 3 1/9 www.st.com 9 Absolute maximum ratings 1 BD235, BD237 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Unit BD235 BD237 VCBO Collector-base voltage (IE = 0) 60 100 V VCER Collector-emitter voltage (RBE = 1 k) 60 100 V VCEO Collector-emitter voltage (IB = 0) 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 2 A ICM Collector peak current (tp < ms)
BD235 BD237 Low voltage NPN power transistors Features Low saturation voltage NPN transistors Applications Audio, power linear and switching applications 3 1 SOT-32 (TO-126) Description The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD238. Table 1. 2 Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging BD235 BD235 SOT-32 Tube BD237 BD237 SOT-32 Tube June 2009 Doc ID 4189 Rev 3 1/9 www.st.com 9 Absolute maximum ratings 1 BD235, BD237 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Unit BD235 BD237 VCBO Collector-base voltage (IE = 0) 60 100 V VCER Collector-emitter voltage (RBE = 1 k) 60 100 V VCEO Collector-emitter voltage (IB = 0) 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 2 A ICM Collector peak current (tp < ms)
29CROSS REFERENCE INDUSTRY SGS-THOMSON SGS-THOMSON PAGE INDUSTRY | SGS-THOMSON SGS-THOMSON PAGE STANDARD | REPLACEMENT | NEAREST PREFERRED STANDARD | REPLACEMENT | NEAREST PREFERRED 2N4919 2N4920 x 2N5333 BSS44 197 2N4920 2N4920 k 2N5334 2N5339 93 2N4921 BD235 135 2N5336 2N5339 93 2N4922 BD235 135 2N5337 2N5339 93 2N4923 BD237 135 2N5338 2N5339 93 2N4998 2N5339 93 2N5339 2N5339 93 2N5000 2N5339 93 2N5346 2N5339 93 2N5002 2N5339 93 2N5347 2N5339 93 2N5004 2N5339 93 2N5348 2N5339 93 2N5034 2N3055 77 2N5349 2N5339 93 2N5035 2N3055 77 2N5386 2N5038 83 2N5036 2N3055 77 2N5387 2N6547 * 2N5037 2N3055 77 2N5388 2N6547 * 2N5038 2N5038 83 2N5389 2N6547 * 2N5039 2N5038 83 2N5415 2N5415 95 2NS068 BDW51C 169 2N5416 2N5416 95 2N5069 BDW51C 169 2N5466 BUX48A 475 2N5083 2N5339 93 2N5467 BUX48A 475 2N5085 2N5339 93 2N5477 2N5339 93 2N5148 2N5339 93 2N5478 2N5339 93 2N5150 2N5339 93 2N5479 2N5339 93 2N5152 2N5339 93 2N5480 2NS339 93 2N5153 BSS44 197 2N5490 MJE3055T 655 2N5154 2N5154 85 2N5491 MJE3055
BD235 BD237 Power Dissipation: PCM =1.25W, Ta=25 Collector Current : IC=2A Complement to BD234/236/238 respectively Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Marking: Type Number NPN Plastic-Encapsulate Transistors Maximum Ratings* Symbol Rating Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Collector-Emitter Voltage VCER VEBO IC ICP PC TJ TSTG K A BD233 BD235 BD237 BD233 BD235 BD237 BD233 BD235 BD237 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation ( TC=25) Operating Junction Temperature Storage Temperature Rating 45 60 80 45 60 100 45 60 100 5 2 6 25 150 -65 to +150 N Unit V D E V M B V V A A W 1 2 3 L G Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 45 60 80 ------- V V V ------- 100 100 100 A A A --- 1.0 mA C OFF CHARACTERIST
BD235 BD237 Silicon NPN Power Transistors * DESCRIPTION *With TO-126 package *Complement to type BD234 /236 /238 APPLICATIONS *For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25) SYMBOL VCBO PARAMETER Collector-base voltage D N O IC BD233 M E S GE BD235 N A H INC Open emitter BD237 BD233 VCEO Collector-emitter voltage BD235 Open base BD237 VEBO Emitter -base voltage IC R O T UC CONDITIONS VALUE UNIT 45 60 V 100 45 60 V 80 Open collector 5 V Collector current (DC) 2 A ICM Collector current-Peak 6 A PC Collector power dissipation 25 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 Inchange Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage Base-emitter on voltage VBE CONDITIONS MAX UNIT IC=
BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1K ) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation @ TC=25C Total Dissipation @ Ta=25C Derate above 25C Operating and Storage Junction Temperature Range BD233 BD234 45 45 45 SYMBOL VCBO VCEO VCER VEBO IC ICM PD PD BD237 BD238 100 80 100 BD235 BD236 60 60 60 5.0 2.0 6.0 25 1.25 10 UNIT V V V V A A W W mW/ C Tj, Tstg - 65 to +150 C Junction to Case Rth (j-c) 5.0 C/W Junction to Ambient in free air Rth (j-a) 100 C/W THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC=25C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION I VCB=45V, IE=0 BD233/234 Collector Cut off Current CBO BD235/236 VCB=60V, IE=0 VCB=100V, IE=0 BD237/238 Emitter Cut off Current Collector Emitter Sustaining Voltage *VCEO
BD235 BD237 Silicon NPN Power Transistors DESCRIPTION *With TO-126 package *Complement to type BD234 /236 /238 APPLICATIONS *For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD233 VCBO VCEO Collector-base voltage Collector-emitter voltage BD235 Open emitter Emitter -base voltage IC 60 BD237 100 BD233 45 BD235 UNIT 45 Open base BD237 VEBO VALUE 60 V V 80 Open collector 5 V Collector current (DC) 2 A ICM Collector current-Peak 6 A PC Collector power dissipation 25 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage Base-emitter on voltage VBE CONDITIONS MAX UNIT IC=1A; IB=0.1A 0.6 V IC=1A ; VCE=2V 1.3 V
ar and Switching Applications * Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD233 : BD235 : BD237 Value 45 60 100 Units V V V VCEO Collector-Emitter Voltage : BD233 : BD235 : BD237 45 60 80 V V V VCER Collector-Emitter Voltage : BD233 : BD235 : BD237 45 60 100 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 6 A PC Collector Dissipation (TC=25C) 25 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) ICBO Parameter * Collector-Emitter Sustaining Voltage : BD233 : BD235 : BD237 Test Condition IC = 100mA, IB = 0 Min. Typ. Max. 45 60 80 Units V V V Collector Cut-off Current : BD233 : BD235 : BD237 VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 100V
ar and Switching Applications * Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD233 : BD235 : BD237 Value 45 60 100 Units V V V VCEO Collector-Emitter Voltage : BD233 : BD235 : BD237 45 60 80 V V V VCER Collector-Emitter Voltage : BD233 : BD235 : BD237 45 60 100 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 6 A PC Collector Dissipation (TC=25C) 25 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) ICBO Parameter * Collector-Emitter Sustaining Voltage : BD233 : BD235 : BD237 Test Condition IC = 100mA, IB = 0 Min. Typ. Max. 45 60 80 Units V V V Collector Cut-off Current : BD233 : BD235 : BD237 VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 100V
BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25 Collector Current : IC=2A Complement to BD234/236/238 respectively Maximum Ratings* Symbol Rating Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Collector-Emitter Voltage VCER VEBO IC ICP PC TJ TSTG BD233 BD235 BD237 BD233 BD235 BD237 BD233 BD235 BD237 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation ( TC=25) Operating Junction Temperature Storage Temperature Rating 45 60 80 45 60 100 45 60 100 5 2 6 25 150 -65 to +150 A Unit V D V R E Parameter B V V A A W N M F G P L H Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol K Min Max Units 45 60 80 ------- V V V ------- 100 100 100 A A A --- 1.0 mA 40 25 ----- --- 0.6 V --- 1.3 V 3 --- MHz C OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BD233 (IC=0.1Adc, IB=0) VCEO(sus) BD235 (IC=0.1Adc, IB=0) BD237 (IC=0.1Adc, IB=0) Collector Cutoff
BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25 Collector Current : IC=2A Complement to BD234/236/238 respectively Maximum Ratings* Symbol Rating Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Collector-Emitter Voltage VCER VEBO IC ICP PC TJ TSTG BD233 BD235 BD237 BD233 BD235 BD237 BD233 BD235 BD237 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation ( TC=25) Operating Junction Temperature Storage Temperature Rating 45 60 80 45 60 100 45 60 100 5 2 6 25 150 -65 to +150 A Unit V D V R E Parameter B V V A A W N M F G P L H Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol K Min Max Units 45 60 80 ------- V V V ------- 100 100 100 A A A --- 1.0 mA 40 25 ----- --- 0.6 V --- 1.3 V 3 --- MHz C OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BD233 (IC=0.1Adc, IB=0) VCEO(sus) BD235 (IC=0.1Adc, IB=0) BD237 (IC=0.1Adc, IB=0) Collector Cutoff