250 2V / 500mA 30MHz 50W BDS18CECC PNP TO257AB (TO220M) 120V 15A 40 250 2V / 500mA 30MHz 50W BDS18IG-F PNP TO257-F 120V 15A 40 250 2V / 500mA 30MHz 50W PRODUCT BFT33ACECC PRODUCT BFT34ACECC PRODUCT BFT35ACECC PRODUCT BFT36ACECC PRODUCT BFT37ACECC PRODUCT BFX34CECC PRODUCT BSS44CECC PRODUCT BSV64CECC PRODUCT BSW66ACECC PRODUCT BSW66CECC Status Polarity Package NPN TO39 (TO205AD) Status Polarity Package NPN TO39 (TO205AD) Status Polarity Package PNP TO39 (TO205AD) Status Polarity Package PNP TO39 (TO205AD) Status Polarity Package PNP TO39 (TO205AD) Status Polarity Package NPN TO39 (TO205AD) Status Polarity Package PNP TO39 (TO205AD) Status Polarity Package NPN TO39 (TO205AD) Status Polarity Package NPN TO39 (TO205AD) Status Polarity Package NPN TO39 (TO205AD) PRODUCT LM137AHVG LM137AHVG-8QR-B LM137AHVGF LM137AHVGF-8QR-B LM137AHVIG LM137AHVK LM137AHVK-8QR-B LM137AHVR LM137AHVR-8QR-B LM137AHVSMD LM137AHVSMD-8QR-B LM137AHVSMD05 VCEO IC(cont) HFE(min) HFE(max) @ VCE/IC 80V 5A 50 250 10V / 150mA VCEO I
BFX34 SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it deal for power drivers, power amplifiers, switching power supplies and relay drivers inverters. 3 2 1 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CBO Collector-Base Voltage (IE = 0) 120 V V CEO Collector-Emitter Voltage (I B = 0) 60 V V EBO Emitter-Base Voltage (I C = 0) 6 V IC Parameter Collector Current P t ot Total Dissipation at T ca s e 25 oC o Tamb 25 C T stg St orage Temperature Tj August 1996 Max. Operating Junction Temperature 5 A 0.87 5 W W -65 to 200 o C 200 o C 1/4 BFX34 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-amb Max Max o 35 200 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise spec
16 2N3716 BSS44 BSS44 2N3771 2N3772 2N3790 2N3790 2N3792 2N3792 2N3716 BDW51C 2N5671 BSS44 BUX48A 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 BUV20 BUV20 2N3716 2N3716 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 2N4399 2N4399 2N5339 2N4895 BFX34 * Product in Development please contact your nearest Sales Office 7 BIPOLAR TRANSISTOR INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PREFERRED INDUSTRY STANDARD , ,,, 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4913 2N4914 2N4915 2N4918 2N4919 2N4920 2N4921 2N4922 2N4923 2N4998 2N5000 2N5002 2N5004 2N5034 2N5035 2N5036 2N5037 2N5038 2N5039 2N5068 2N5069 2N5083 2N5085 2N5148 2N5150 2N5152 2N5153 2N5154 2N5157 2N5190 2N5191 2N5192 2N5193 2N5194 2N5195 2N5240 2N5241 2N5264 2N5284 , ,,, TIP2955 TIP2955 TIP2955 TIP2955 TIP2955 TIP2955 2N3792 2N3792 2N3792 BDW51C BDW51C BDW51C 2N4918 2N4919 2N4920 2N4921 2N4922 2N4923 2N5339 2N5339 2N5339 2N5339 2N3055 2N3055 2N3055 2N3055 2N5038 2N5039 BDW51C BDW51C 2N5339 2N5339 2N5337
BFX34 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor ina TO-39 metal package primarily intended for use as high-current switching device, e.g. inverters and switching regulators. QUICK REFERENCE DATA Collector-base voltage (open emitter) VcCBO max. 120 V Collector-emitter voltage (open base) VcEQ max. 60V Collector current (peak value} lcm max. 5,0 A Total power dissipation up to Tease = 25 OC Prot max. 5,0 W Junction temperature Tj max. 200 C D.C. current gain Ic=2A;VcR=2V hee 40 to 150 Transition frequency at f = 100 MHz Ic=O5A;Vep=5V ft > 70 MHz Turn-off time when switched from 1c =5 A: 1g =0,5A to cut-off with Ippy = 0,5 A totf < 1,2 us MECHANICAL DATA Dimensions in mm Fig. 1 TO-39. Collector connected to case 0,86 : max # 45 *| PS Maximum tead diameter is guaranteed only for 12,7 mm. September 1994 573BFX34 RATINGS Limiting values in accordance with the Absoiute Maximum System (IEC 134) Collector-base voltage (open emitter) VcBO Collector-emitter voltage (open base} VCEO E
BFX34 (R) SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drivers inverters. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC P tot T stg Tj Collector Current Total Dissipation at T case 25 C o T amb 25 C Storage Temperature o Max. Operating Junction Temperature December 2000 Value Unit 120 V 60 V 6 V 5 A 0.87 5 W W -65 to 200 o C 200 o C 1/4 BFX34 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-amb Max Max o 35 200 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unle
ed BDW51C BDW51C BDW51C BDW51C BSS44 BSS44 2N3771 2N3772 BDW52C BDW52C BDW52C BDW52C BDW51C BDW51C BUV50 BSS44 BUX48A 2N5339 2N5339 2N5339 2N5339 2N5339 BUV20 BDW51C BDW51C 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 MJ4502 2N5884 2N5339 BFX34 1 / 47 BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N4897 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4913 2N4914 2N4915 2N4918 2N4919 2N4920 2N4921 2N4922 2N4923 2N4998 2N5000 2N5002 2N5004 2N5034 2N5035 2N5036 2N5037 2N5038 2N5039 2N5068 2N5069 2N5083 2N5085 2N5148 2N5150 2N5152 2N5153 2N5154 2 / 47 SGS-THOMSON replacement SGS-THOMSON nearest preferred BFX34 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 BDW52C BDW52C BDW52C BDW51C BDW51C BDW51C BD238 BD238 BD238 BD235 BD235 BD237 2N5339 2N5339 2N5339 2N5339 2N3055 2N3055 2N3055 2N3055 2N5038 2N5038 BDW51C BDW51C 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 BFX34 Industry standard 2N5157 2N5190 2N5191 2N5192 2N5193 2N5194 2N5195 2N5240 2N52
2N4923 2N4998 2N5000 2N5002 2N5004 2N5034 2N5035 2N5036 ST REPLACEMENT ST NEAREST PREFERRED BDW51C BUV50 BSS44 BUX48A 2N5339 2N5339 2N5339 2N5339 2N5339 BUV20 BDW51C BDW51C 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 2N5884 2N5884 2N5339 BFX34 BFX34 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 BDW52C BDW52C BDW52C BDW51C BDW51C BDW51C 2N4920 2N4920 2N4920 BD235 BD235 BD237 2N5339 2N5339 2N5339 2N5339 2N3055 2N3055 2N3055 1/35 Bipolar Transistors Cross Reference INDUSTY STANDARD 2N5037 2N5038 2N5039 2N5068 2N5069 2N5083 2N5085 2N5148 2N5150 2N5152 2N5153 2N5154 2N5157 2N5190 2N5191 2N5192 2N5193 2N5194 2N5195 2N5240 2N5241 2N5264 2N5284 2N5285 2N5293 2N5294 2N5295 2N5297 2N5298 2N5298 2N5301 2N5302 2N5303 2N5333 2N5334 2N5335 2N5336 2N5337 2N5338 2N5339 2N5346 2N5347 2N5348 2N5349 2N5386 2N5387 2N5388 2N5389 2N5415 2N5416 2N5466 2N5467 2/35 ST REPLACEMENT ST NEAREST PREFERRED 2N3055 2N5038 2N5153 2N5154 2N5038 BDW51C BDW51C 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 BUX48
BFX34 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor BFX34 FEATURES PINNING * High current (max. 2 A) PIN * Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case * High-current switching, e.g. inverters and switching regulators. 1 handbook, halfpage DESCRIPTION 3 2 NPN switching transistor in a TO-39 metal package. 2 3 1 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 120 V VCEO collector-emitter voltage open base - 60 V IC collector current (DC) - 2 A Ptot total power dissipation Tcase 25 C - 5 W hFE DC current gain IC = 2 A; VCE = 2 V 40 150 fT transition frequency IC = 0.5 A; VCE = 5 V; f = 100 MHz 70 - MHz toff turn-off time ICon = 5 A; IBon = 0.5 A; IBoff = -0.5 A - 1.2 s
C 169 2N4307 2N5339 93 2N3235 2N3055 77 2N4309 2N5339 93 2N3236 BDW51C 169 2N4311 2N5339 93 2N3238 BDW51C 169 2N4314 BSS44 197 2N3239 BDW51C 169 2N4398 2N5884 105 2N3240 BUX10 519 2N4399 2N5884 105 2N3419 2N5339 93 2N4877 2N5339 93 2N3420 2N5339 93 2N4895 BFX34 195 2N3421 2N5339 93 2N4897 BFX34 195 2N3439 2N3439 79 2N4901 MJ2955 607 2N3440 2N3440 79 2N4902 MJ2955 607 2N3445 BDW51C 169 2N4903 MJ2955 607 2N3446 BOW51C 169 2N4904 MJ2955 607 2N3447 BOWS1C 169 2N4905 MJ2955 607 2N3448 BOW51C 169 2N4906 MJ2955 607 2N3667 BOWS51C 169 2N4907 BDW52C 169 2N3713 BDW51C 169 2N4908 BDW52C 169 2N3715 BOW51C 169 2N4909 BDWS52C 169 2N3716 BDW51C 169 2N4913 BDW51C 169 2N3719 BSS44 197 2N4914 BDWS5iC 169 2N3720 BSS44 197 2N4915 BOW51C 169 2N3771 2N3771 at 2N4918 2N4920 * * Datasheet available on request 97 SE8THOMSON 29CROSS REFERENCE INDUSTRY SGS-THOMSON SGS-THOMSON PAGE INDUSTRY | SGS-THOMSON SGS-THOMSON PAGE STANDARD | REPLACEMENT | NEAREST PREFERRED STANDARD | REPLACEMENT | NEAREST PREFERRED 2N491
BFX34 SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drivers inverters. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) Collector Current IC P tot Total Dissipation at T case 25 C T amb 25 o C T stg Storage Temperature Tj June 1997 o Max. Operating Junction Temperature Value Unit 120 V 60 V 6 V 5 A 0.87 5 W W -65 to 200 o C 200 o C 1/4 BFX34 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-amb Max Max o 35 200 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise sp
BFX34 (R) SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drivers inverters. c u d TO-39 e t le ) s t( o r P INTERNAL SCHEMATIC DIAGRAM ) s ( ct o s b O - u d o r P e t e l o ABSOLUTE MAXIMUM RATINGS s b O Symbol Parameter V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC P tot T stg Tj Collector Current Total Dissipation at T case 25 C o T amb 25 C Storage Temperature o Max. Operating Junction Temperature August 2001 Value Unit 120 V 60 V 6 V 5 A 5 0.87 W W -65 to 200 o C 200 o C 1/4 BFX34 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-amb Max
BFX34 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drivers inverters. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CBO Collector-Base Voltage (I E = 0) 120 V V CEO Collector-Emitter Voltage (IB = 0) 60 V V EBO Emitter-Base Voltage (IC = 0) 6 V Collector Current 5 A 0.87 5 W W IC P t ot T stg Tj Parameter Total Dissipation at Tcase 25 oC o Tamb 25 C St orage Temperature Max. Operating Junction Temperature December 2000 -65 to 200 o C 200 o C 1/4 BFX34 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-amb Max Max o 35 200 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless
BFX34 SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it deal for power drivers, power amplifiers, switching power supplies and relay drivers inverters. 3 2 1 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Valu e Unit V CBO Collector-Base Voltage (IE = 0) 120 V V CEO Collector-Emitter Voltage (I B = 0) 60 V V EBO Emitter-Base Voltage (I C = 0) 6 V Collector Current 5 A 0.87 5 W W IC Parameter o P tot T otal Dissipation at T case 25 C o Tamb 25 C T s tg Storage Temperature Tj Max. O perating Junction Temperature October 1995 -65 to 200 o C 200 o C 1/4 BFX34 THERMAL DATA R thj -ca se R thj- amb Thermal Resistance Junction-case Thermal Resistance Junction-amb Max Max o 35 200 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise spe
BFX34 (R) SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drivers inverters. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC P tot T stg Tj Collector Current Total Dissipation at T case 25 C o T amb 25 C Storage Temperature o Max. Operating Junction Temperature August 2001 Value Unit 120 V 60 V 6 V 5 A 5 0.87 W W -65 to 200 o C 200 o C 1/4 BFX34 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-amb Max Max o 35 200 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless
BFX34 MECHANICAL DATA Dimensions in mm (inches) HIGH CURRENT GENERAL PURPOSE TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) DESCRIPTION: The BFX34 is a silicon Epitaxial Planar NPN transistor in a TO-39 case, intended for high current applications. 6.10 (0.240) 6.60 (0.260) Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drive inverters. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 FEATURES 3 0.74 (0.029) 1.14 (0.045) * SILICON EPITAXIAL NPN TRANSISTOR 0.71 (0.028) 0.86 (0.034) * HIGH SPEED, LOW SATURATION SWITCH * CECC SCREENING OPTIONS 45 TO39 (TO-205AD) Package PIN1 - EMITTER Underside View PIN 2 - BASE PIN 3 - COLLECTOR ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector - Base Voltage (IE = 0) 120V VCEO Collector - Emitter Voltage (IB = 0) 60V VEBO Emitter - Base Voltage (IC = 0) 6V