IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = 1000V 12A 1.05 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, pulse width limited by TJM 24 A IAR TC = 25C 6 A EAS TC = 25C 750 mJ dV/dt IS IDM, VDD VDSS, TJ 150C 15 V/ns PD TC = 25C 463 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C TL Maximum lead temperature for soldering 300 C TSOLD Plastic body for 10s 260 C Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220) 11..65/2.5..14.6 N/lb. Weight TO-247 PLUS220 types 6 4 g g D S D (TAB) PLUS220SMD (IXFV_S) G S D (TAB) TO-247 (IXFH) D (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Adv
0 360 180 300 300 500 360 IXFH76N07-11 IXFH75N10 IXFN170N10 IXFH50N20 IXFH58N20 IXFH52N30Q IXFK73N30 IXFN73N30 IXFH40N30 IXFH21N50 IXFH24N50 IXFH26N50 IXFH26N50Q IXFH30N50 IXFH32N50 IXFH40N50Q2 IXFN48N50 IXFH20N60 IXFH26N60Q IXFH15N80 IXFH20N80Q IXFH6N100 IXFH12N100 IXFH12N100Q IXFH14N100Q2 IXFH15N100 0.006 0.008 0.006 0.0125 0.017 0.01 0.022 0.12 0.1 0.08 0.055 0.130 0.075 0.32 0.165 0.3 0.39 0.24 0.35 200 180 230 150 120 180 130 44 48 55 80 44 60 27 44 26 24 36 32 600 720 920 600 480 720 520 176 192 220 320 176 240 108 800 104 96 144 128 4 4 4 4 4 4 4 4 4 4.5 4.5 4 4.5 4.5 4 5 5 5.5 5 520 600 700 600 600 700 700 500 500 600 780 600 600 520 700 600 600 700 780 IXFN200N07 IXFN180N10 IXFN230N10 IXFN150N15 IXFN120N20 IXFN180N20. IXFN130N30 IXFN44N50Q IXFK48N50 IXFN55N50 IXFN80N50 IXFN44N60 IXFN60N60 IXFN27N80Q IXFN44N80 IXFN26N90 IXFN24N100 IXFN36N100 IXFN32N120 0.02 0.18 0.4 90 36 30 360 144 120 4 4.5 5 500 500 735 IXFK90N20 IXFK36N60 IXFK30N100Q2 0.75 20 80 5 780 IXFX20N120 PD @ 25C
IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, Pulse Width Limited by TJM 24 A IAR TC = 25C 6 A EAS TC = 25C 750 mJ dv/dt IS IDM, VDD VDSS, TJ 150C 15 V/ns PD TC = 25C 463 W Maximum Ratings -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ Maximum Lead Temperature for Soldering 300 C TSOLD Plastic Body for 10s 260 C Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-247 PLUS220 types D S D (Tab) PLUS220SMD (IXFV_S) TL Mounting Force (PLUS220) 1000V 12A 1.05 300ns PLUS220 (IXFV) G FC = = 11..65/2.5..14.6 N/lb. 6 4 g g G S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25C, Unless Otherw
ving Standard IXYS MOSFETs fPWM= 100KHz Peak Standard Qg in Ig in Mosfet nC fPWM = 200KHz Rg in Total Pg Gate Peak Ig in Amp Ohm fPWM =400KHz Rg in Total Pg Gate Peak Ig in Rg in Total Pg Gate Rcmd Pwr W Drvr Amp Ohm W Drvr Amp Ohm W Drvr Out IXFH6N100 88 IXFH12N100 122 0.9 1.2 11.4 8.2 0.1 0.2 Dx402 Dx402 1.8 2.4 5.7 4.1 0.3 0.4 Dx404 Dx404 3.5 4.9 2.8 2 0.5 0.7 Dx404 DD408 500W 1KW IXTK21N100 250 2.5 4 0.4 Dx404 5 2 0.8 DD408 10 1 1.5 Dx414* 2KW Gate Rcmd Pwr Drvr Out Driving Q-Class MOSFETs fPWM= 200KHz Q-Class Mosfet Peak Qg in Ig in nC fPWM = 400KHz Rg in Total Pg Gate Peak Ig in fPWM =800KHz Rg in Total Pg Gate Peak Ig in Rg in Total Pg Drvr Amp Ohm W Amp Ohm W Drvr Amp Ohm W IXFH6N100Q 48 0.96 10.4 0.1 Dx402 1.9 5.2 0.28 Dx402 3.84 2.6 0.57 Dx404 500W IXFH12N100Q 90 IXFH21N100Q 170 1.8 3.4 5.6 2.9 0.3 0.5 Dx404 Dx408* 3.6 6.8 2.8 1.5 0.5 1 DD408 Dx409* 7.2 13.6 1.4 0.7 1.1 2 Dx409* Dx414* 1KW 2KW Gate Rcmd Pwr Driving F-Class MOSFETs fPWM= 1MHz Q-Class Qg in Mosfet nC IXFH6N10
5P IXFH102N15T IXFH10N100 IXFH10N100P IXFH10N100Q IXFH10N80P IXFH10N90 IXFH110N10P IXFH110N15T2 IXFH110N25T PART NUMBER (WKS) 8 8 8 CF 8 8 CF 8 8 8 8 10 CF 8 CF CF CF CF 4 CF CF CF CF CF CF CF CF CF 4 CF 8 CF 10 8 8 4 6 CF 8 CF 8 8 8 IXFH11N80 IXFH120N20P IXFH12N100 IXFH12N100F IXFH12N100P IXFH12N100Q IXFH12N120 IXFH12N120P IXFH12N80P IXFH12N90 IXFH12N90P IXFH12N90Q IXFH13N100 IXFH13N50 IXFH13N80 IXFH13N80Q IXFH13N90 IXFH140N10P IXFH14N100 IXFH14N100Q IXFH14N100Q2 IXFH14N60P IXFH14N80 IXFH14N80P IXFH150N17T IXFH15N100 IXFH15N100P IXFH15N100Q IXFH15N60 IXFH15N80 IXFH15N80Q IXFH160N15T IXFH160N15T2 IXFH16N120P IXFH16N50P IXFH16N80P IXFH16N90Q IXFH170N10P IXFH17N80Q IXFH18N60P IXFH18N90P IXFH20N100P IXFH20N60 PART NUMBER (WKS) 8 8 8 8 CF 8 8 8 8 8 8 CF 10 8 8 6 CF 8 6 CF 8 12 8 8 8 6 8 8 4 8 8 8 8 8 8 8 CF 8 CF 8 18 8 8 IXFH20N60Q IXFH20N80P IXFH20N80Q IXFH21N50 IXFH21N50Q IXFH22N50P IXFH22N60P IXFH22N60P3 IXFH230N075T2 IXFH230N10T IXFH23N60Q IXFH23N80Q IXFH24N
IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = 1000V 12A 1.05 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, pulse width limited by TJM 24 A IAR TC = 25C 6 A EAR TC = 25C 25 mJ EAS TC = 25C 750 mJ dV/dt IS IDM, VDD VDSS, TJ 150C 15 V/ns PD TC = 25C 463 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ TL Maximum lead temperature for soldering 300 C TSOLD Plastic body for 10s 260 C Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220) 11..65/2.5..14.6 N/lb. Weight TO-247 PLUS220 types 6 4 g g D S D (TAB) PLUS220SMD (IXFV_S) G S D (TAB) TO-247 (IXFH) D (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive
IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, Pulse Width Limited by TJM 24 A IAR TC = 25C 6 A EAS TC = 25C 750 mJ dv/dt IS IDM, VDD VDSS, TJ 150C 15 V/ns PD TC = 25C 463 W Maximum Ratings -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ Maximum Lead Temperature for Soldering 300 C TSOLD Plastic Body for 10s 260 C Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-247 PLUS220 types D S D (Tab) PLUS220SMD (IXFV_S) TL Mounting Force (PLUS220) 1000V 12A 1.05 300ns PLUS220 (IXFV) G FC = = 11..65/2.5..14.6 N/lb. 6 4 g g G S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25C, Unless Otherw
60 2 IRFP450 SK0224 400 3 IRFP460 SK0229 400 4 IXDA20N120AS 446 960 5 IXDA20N120AS 640 960 6 IXDA20N120AS 757 960 7 IXDA20N120AS 757 960 8 IXEH40N120 539 960 9 IXER60N120 488 960 10 IXFB70N60Q2 SP0335 480 11 IXFB80N50Q2 SP0251 400 12 IXFF24N100 389 800 13 IXFH12N100F SP0130 800 14 IXFH13N50 SP0338 400 15 IXFH15N80 SP 0224 640 16 IXFH16N90Q SP 0242 720 17 IXFH17N80Q SK0322 640 18 IXFH20N60 SK0339 480 19 IXFH21N50 SK0342 400 20 IXFH21N50Q K0246E 400 21 IXFH23N60Q SK0322 480 22 IXFH24N50 K0314K 400 23 IXFH26N50 SP 0228 400 24 IXFH26N50 SP0237 400 25 IXFH26N50Q K0315H 400 26 IXFH26N50Q SK0339 400 27 IXFH26N50Q SP0308 400 28 IXFH26N60Q K0311J 480 29 IXFH28N50F SP 0151 400 30 IXFH28N50Q SP0325 400 31 IXFH32N50 SK 0224 400 32 IXFH32N50Q SK0330 400 33 IXFH32N50Q SP 0147 400 34 IXFH40N50Q SP0326 400 35 IXFH50N20 SK0325 160 36 IXFH60N20F SP 0151 160 37 IXFH66N20Q SK0306 160 38 IXFH6N100F SP 9936 800 39 IXFH6N100Q TP 0143 800 40 IXFH80N10Q SK0313 80 41 IXFH88N20Q SK0302 160 42 IXFH9N80 TK 0229 640 43 IXFK27
trolled by the amount of collector shorting. In order for the diode to be usable and not cause commutating dv/dt problems, the lifetime of the minority carriers must be Let us compare IXBH40N160 BiMOSFET's electrical performance to that of a 1000V MOSFET (IXFH12N100) and a 1200V DMOS constructed, SCSOA rated IGBT (IXSH35N120A); all three parts being constructed using the same silicon chip size (7.11mm x 8.64mm). The comparison is conservative because both competing parts are lowerVoltage rated. 1. The threshold Voltage of the BiMOSFETTM is the highest of all but its Qg(on)is comparable. This is due to its relatively low Miller gate capacitance resulting in low Miller gate charge as can be seen in Figure 2. In one sense, a high threshold Voltage can be considered as an advantage in electrically noisy environments. 16 V CE = 600V 14 IC = 2 0 A 12 VGE - Volts I. Fig. 1 BiMOSFETTMcross-sectional view Miller gate charge - 50nC 10 8 6 4 R. E. Locher is Director, Applications Engineering, IXYS Corporati
Carparation 3540 Bassett Street, Santa Clara, CA $5054 11 Tel: (408) 982-0700 - Fax: (408) 496-0670 IXYS Semiconductor POB 1180 + D-68619 + Lampertheim, Germany Tel. +49-6206-5030 - Fax: +49-6206-503629PsN oP a INOW S44 12 IXBD4411 IXBD4413 +800V Oc I lis IXFH12N100 d ~ [Ria ( " Vdd Vdd out Ls 100 | iw - ro ecoa 9 0.022uF 0.022uF c1* or C2 lay BA py dev icis - ADl > ~T1 7 om ok 10uF a O1uF 3 Ni oan OP) "S eo RIS 0.01uF| ca R11 Ri 2 INL 16 pin OIP C7 MW = 4.7K + cBl12 4. F100 Wi Veele (0. 1uF sy T+ To p+ KPO 4 4 7 6 C9 C10 cg tks OS seh L O.022uF, F228 prea) a & Ss rea 1s. 5 IN4148 O.tuF 10uF 12C0V ISOLATION BARRIER | | C184 6.022uF | am lt; [RIG tof to 3 3 4.70 r 20, oceaurl 3R6 IXFH12N100 i 5 Che gf 222 m R13 0.022uF s 100 4} tM + 15V R+ R- T+ T-[1S i iw Leo Les [cis Lilvee ouT| R12 ne 7 | tox | O.1uF | tour g ag a +5v> IXE04410 13 Ra , qlalta (6 gin 07) ja C12 R14 ; rd 16 pin OIF 1 + 4.7K Pa > 3 SUINH cpl Gil. ey | (OS 1uF Sis 16 2liNt Vee 4 = = CFE20 : ke HOt O.1uF 3 Ppt Rs LG US
-1 STB55NF06LT4 STS12NH3LL STS6PF30L IXYS IRFP250 IRFP260 IRFP264 IRFP450 IRFP460 IRFP470 IXFE180N10 IXFE39N90 IXFE44N50Q IXFE44N50QD2 IXFE44N50QD3 IXFE44N60 IXFE48N50Q IXFE48N50QD2 IXFE48N50QD3 IXFE50N50 IXFE55N50 IXFE80N50 IXFH10N100 IXFH10N90 IXFH11N80 IXFH12N100 IXFH12N100F IXFH12N100Q(5) IXFH12N50F IXFH12N90 IXFH12N90Q IXFH13N100 IXFH13N50 IXFH13N80 IXFH13N80Q IXFH13N90 IXFH14N100 IXFH14N100Q2 IXFH14N80 IXFH15N100 IXFH15N100Q IXFH15N60 IXFH15N80 IXFH15N80Q IXFH16N90Q IXFH17N80Q 22 STW40N20 STW40N20 STW52NK25Z STW14NK50Z STW20NK50Z STW20NM50FD STE48NM50 STE48NM50 STE48NM50 STE40NC60 STE48NM50 STE48NM50 STE48NM50 STE48NM50 STE53NC50 STE70NM50 STW11NK100Z STW10NK80Z STW14NM50FD STW12NK90Z STW12NK90Z STW14NM50FD STW12NK80Z STW12NK80Z STW12NK90Z STW13NK100Z STW12NK80Z STW13NK100Z STW13NK100Z STW14NK60Z STW13NK80Z STW13NK80Z STW15NK90Z STW13NK80Z ST nearest STW15NK50Z STW29NK50ZD STE180NE10 STE40NK90ZD STE53NC50 STE53NC50 STE53NC50 STE53NC50 STE53NC50 STE53NC50 STE53NC50
lied in the off-state. In these cases the IXBD4410/4411 with V,,. negative bias generator must be used. The internal V_, generator is a charge pump circuit. Referring to Fig. 6, an external charge pump capacitor is required between the CA and CB +B800V OC IXFH12N100 | R10 the (A Vad vad our HS 18 i) 4 4 RS O00 u2 tm(S_0.022uF 0 o22ur cith go C2 Slt CA a7 ety iets sour o1uF si, Batt 1 3 68 ast ootrl ca Ri 218 pin DIP {Rt ins (16 pin DIP) glo o, ate 47K y 100 } tig Veel14 u -5SvV T+ Tre KOPP e (4. |? tool cio os RS D3 she a L oo22uFT 7222 form rc fp aa 1N4148 0 1uF 10uF 1200V ISOLATION BARRIER | toa) | fers 0 02auF | oy la! rie] LES a 4 1 20, 478 .Opaurl 2 RS IXFH12N100 9 o20uF ye] COs 4] 228 Rts 5 18 15 roa (\4f) gam +15V RRS T+ q 1M a2 tos Jcis L|vdd OUT R12 Ar O1uF | 10uF g/ ui im 2 +> 10K SIFT iypnaaig CATI2 RB deli BBQ R14 1 (16 pin DIP) 11 + 62 47K PWM 1/3 LZ Sling cpl2 F 8\\, 0.01uF JUL 16L ppezo LS ZJINL Vee is - =5v oF, 9 Ra LG KG us [10 #8 " Yor. +013 + Cit T82pF iN4148 [OQ t
IXFH12N100Q_ V,.. = 1000V Power MOSFETs IXFH12N1000S |, = 124A psn) O=tiIXFH12N100QS) 5 we Ty 150 C Tog -55 ... +150 ce T, 1.6 mm (0.063 in) from case for 10s 300 C M, Mounting torque 1.13/10 Nm/ib.in. Weight 6 g Features Symbol Test Conditions Characteristic Values : IXYS advanced low Q, process (T, = 25C, unless otherwise specified) International standard packages min. | typ. max.
Total Qg in Ig in Rg in Pg nC Amp Ohm W Gate Drvr fPWM = 200KHz Peak Total Ig in Rg in Pg Amp Ohm W Gate Drvr fPWM =400KHz Peak Total Ig in Rg in Pg Amp Ohm W Rcmd Pwr Gate Drvr Out IXFH6N100 88 0.9 11.4 0.1 Dx402 1.8 5.7 0.3 Dx404 3.5 2.8 0.5 Dx404 500W IXFH12N100 122 1.2 8.2 0.2 Dx402 2.4 4.1 0.4 Dx404 4.9 2.0 0.7 DD408 1KW IXTK21N100 250 2.5 4.0 0.4 Dx404 5.0 2.0 0.8 DD408 10.0 1.0 1.5 Dx414* 2KW sochi Page 4 10/22/02 IXAN0011 Table 2 IV. DRIVING Q-CLASS MOSFETS The Q-Class series of MOSFETs are optimized for low gate charge, Qg (on), to reduce gate drive energy loss. Table 3 provides the gate driver selection table for the Q-Class MOSFETs whose current and voltage ratings were selected to be similar to the ones in Table 2 for comparison purposes. The most straightforward way of improving the efficiency of an existing SMPS system design is to simply replace the standard MOSFET used with an equivalent Q series MOSFET of the same Rds (on) and voltage rating, --- a no brainer! An examination of
6131-1109 + TEL: (408)435-1900 + FAX: (408) 435-0670 ABB-IXYS Semiconductor GmbH POB 1180 * D-6840 Lampertheim, Germany TEL: +49-6206-5030 + FAX: +49-6206-503627 - TLX: 662422602 abd @ 12ULE D MM 4bSb22b 0001070 2 MBIXY IX Y S$ CORP T-52-13-90 +800 DC RIO IXFH12N100 10% Ww U2 xe04411 (16 pin DIP) Ri 1200V ISOLATION BARRIER IXFH12N100 R13 iM aw R2 10K] O.1uF | Our SXB04410 (16 pin DIF) R14 4.7K GND Figure 11: IXBD4410/4411 Detailed one phase circuit + BOO OC 1200V ISOLATION +15V +5 Pwu PUL GNO Figure 12: Lower cost IXBD4412/4413 single phase circuit ground,a voliage as high as V=27nH- 500A/uS (MOSFETS inthis example) controlled byacommon =13.5V can be developed. Ifthe FET switches 25A, _ digital lC (the IXDP630). With ihe ISOSMART gate the transient will last as tong as (25/500)pS or 50nS, _ driver chipset grounded as in option (b), the commu- which is more than the typical 6 or 7nS propagation _ nication path from the IXDP630 will operate without . delay of a 74HC series gate. errors