AM LEAD PIN DIODES Model Pvancown Series Capacitance Canin Recovery _ Outline Var) Rene) Cr (pF) Lifetime Time = BR + (nsec) trr (nsec) . MIN TYP MAX TYP MAX TYP TYP == MBP-1030-B11 100 55 6.5 020.025 35 4.9 oa MBP-1033-B11 100 4.0 5.0 .025 .030 40 48 ome MBP-1034-B11 100 6.0 7.0 .025 .030 25 5.5 = MBP-1035-B11 60 3.5 4.0 .030 .040 30 2.5 == MBP-1036-B11 60 2.5 3.0 .040 .050 40 2.4 MBP-2030-B11 60 6.0 7.0 .023 .025 20 4.1 MBP-2034-B11 60 5.0 6.0 .026 .030 20 3.2 Va=10V Conditions I=t0Hk | aoe =20eGHe | Tema | vac tov FEATURES Low Capacitance e Low Resistance e Fast Switching Rugged Construction Oxide and Polyimide Passivation MAXIMUM RATINGS Total Power Dissipation ... . 250 mWat + 25C Derate Linearly to O at + 175C DESCRIPTION Metelics Mesa Beam Lead PIN diodes provide low microwave capacitance and fast switching per- Operating Temperature... . . 65 to + 175C formance. They are ideal for use in broadband high speed multi-throw switches as well as phase StorageTemperature .... . 65 to + 200C shif
B11 Breakdown Series Carrier Recovery Model Voltage Resistance Capacitance Lifetime Time Outline VBR {(V) (ohms) Cr (pF) 1 (nSec) Trr (nSec) 6 Min Typ Max Typ = Max Typ Typ 4 MBP-1030-B11 100 5.5 6.5 020 .025 35 4.9 MBP-1033-B11 100 4.0 5.0 025 .030 40 48 MBP-1034-B11 100 6.0 7.0 .025 .030 25 5.5 35 14 . MBP-1035-B11 60 3.5 4.0 030 .040 30 2.5 33 10 { MBP-1036-B11 60 2.5 3.0 .040 .050 40 2.4 | ~ MBP-2030-B11 60 6.0 7.0 023 .025 20 4.4 MBP-2034-B11 60 5.0 6.0 026 .030 20 3.2 11 Test Ir=10pA If=10mA Vr=10V If=10mA If=10 mA 7 cP F018 pF Conditions f=1-3.0 GHz f=2-18 GHz Ir=6mMA Vr=10V peta swept ALL DIMENSIONS IN MILS Note: Swept measurement added upon request.
beam construction provides high beam pull strength. wove, | "Stage" | nestance | Capectance | Gaier | racoven Ver (V) (OHMS) z (nsec) trr (NSec) MIN TYP MAX TYP MAX TYP TYP MBP-1030-B11 100 5.5 6.5 -020 .025 35 49 MBP-1033-B11 100 4.0 5.0 .025 .030 40 48 MBP-1034-B11 100 6.0 7.0 .025 .030 25 5.5 MBP-1035-B11 60 3.5 4.0 .030 .040 30 2.5 MBP-1036-B11 60 2.5 3.0 .040 .050 40 2.4 MBP-2030-B11 60 6.0 7.0 .023 .025 20 4.1 MBP-2034-B11 60 5.0 6.0 .026 .030 20 3.2 Va=10V Conditions IR= 10 A J 7.30 on f= swept. ee ma Vantov C. (pF) RF RESISTANCE (OHMS) 3 _ TYPICAL RF RESISTANCE VS. FORWARD BIAS CURRENT ~ MPB-1034 MPB-1033 ~ 1 10 FORWARD BIAS CURRENT (mA) 100 TYPICAL DC FORWARD CHARACTERISTICS O/ 10 - e < MPB-1034, MPB-2034 ~. E , z 1.0 +> + ~ J Ww MPB-1035, MPB-1036 - a > oO a x L = 1 ac oO Ww ~MPB-1030, MPB-2030 O1f--- - JF - YY) 001 5 6 7 8 9 1.0 FORWARD VOLTAGE (VOLTS) 05 | | J | \ CAPACITANCE VS. REVERSE VOLTAGE, 1 MHz 04K po . = KS MPB-1036 03 Ro MPB-1035 Pheer MPB- 1034 0 , MPB-1030 1 01 0 5 10 15