= 4 V F = 50 MHz SOD323 25 Silicon PIN Diodes Beam Lead Beam Lead & Packaged Beam Lead trr MIN V TYP pF MAX pF TYP MAX TYP ns TYP ns PDISS MAX MW Package MBP1030-B11 100 0.020 0.025 5.5 6.5 35 5.0 250 B11 MBP1033-B11 100 0.025 0.030 4.0 5.0 40 5.0 250 B11 MBP1034-B11 100 0.025 0.030 6.0 7.0 25 5.5 250 B11 MBP1035-B11 60 0.030 0.040 3.5 4.0 30 2.5 250 B11 MBP1036-B11 60 0.040 0.050 2.5 3.0 40 2.5 250 B11 MBP2030-B11 60 0.023 0.025 6.0 7.0 20 4.0 250 B11 MBP2034-B11 60 0.026 0.030 5.0 6.0 20 3.0 250 B11 MPND4005-B15 100 0.018 0.020 5.5* 6.5* 125 --- 250 B15 MPND4005-B16 100 0.018 0.020 5.5* 6.5* 125 --- 250 B16 MPND4005-0402 100 0.070* 0.090* 5.5 6.5 125 --- 250 0402 VBR Model Test Conditions I R = 10 A CJ RS VR = 10 V I F = 10 mA F = 15 GHz * I F = 20 mA * CT F = 3 GHz I F = 10 mA I F = 10 mA I R = 6 mA VR = 10 V TC = +25 C, Derate Linearly to +175 C Low Capacitance, Fast Switching Beam Lead & Packaged VBR Model CJ RS TYP ns Contact MIN mils MAX C / W Package 1.5 8 1.5 60 C11 2.7 15 1.5 60 C11 1.5
gged Construction 5 gram Pulls typ. Oxide/ Polyimide Double Passivation Electrical Specifications, TA = 25 C VBR V Part Number RS CJ pF ns trr ns MIN TYP MAX TYP MAX TYP TYP MBP1030-B11 100 5.5 6.5 .020 .025 35 4.9 MBP1033-B11 100 4.0 5.0 .025 .030 40 4.8 MBP1034-B11 100 6.0 7.0 .025 .030 25 5.5 MBP1035-B11 60 3.5 4.0 .030 .040 30 2.5 MBP1036-B11 60 2.5 3.0 .040 .050 40 2.4 MBP2030-B11 60 6.0 7.0 .023 .025 20 4.1 MBP2034-B11 60 5.0 6.0 .026 .030 20 3.2 IF = 10 mA IR = 6 mA I F = 10 mA VR = 10 V Test Conditions I R=10 A I F = 10mA f = 1-3.0 GHz VR = 10 V f = 2-18 GHz swept Absolute Maximum Ratings Parameters Limit Total Power Dissipation 250 mW at +25C Derate Linearly to zero at +175C Operation Temperature -65C to +175C Storage Temperature -65C to +200C Terminal Strength 3 Grams Minimum Revision Date: 05/01/05 Mesa Beam Lead PIN Diodes Typical Performance, TA = 25 C Figure 1. Figure 2. Forward DC Charracteristics -"0 # -"0 Series Isolation olation vs Frequenc Fre equency -"0 # -"0 -"0 # -"0 Isolat