NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control. -7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V RDS(ON) = 0.045 @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ______________________________________________________________________________ D G Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current D D S - Continuous (Note 1a) Maximum Power Dissipation NDT456P Units
miconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control. -7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V RDS(ON) = 0.045 @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. __________________
NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control. -7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V RDS(ON) = 0.045 @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ______________________________________________________________________________ D G Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current D D S - Continuous (Note 1a) Maximum Power Dissipation NDT456P Units
NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control. -7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V RDS(ON) = 0.045 @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ______________________________________________________________________________ D G Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current D D S - Continuous (Note 1a) Maximum Power Dissipation NDT456P Units
NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control. -7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V RDS(ON) = 0.045 @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ______________________________________________________________________________ D G Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current D D S - Continuous (Note 1a) Maximum Power Dissipation NDT456P Units
NDT456P Leeper el FAIRCHILD SEMICONDUCTOR NDT456P General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control. December 1998 P-Channel Enhancement Mode Field Effect Transistor Features -7.5 A, -30 V. Rogoy, = 0-030 2 @ Vag = -10 V Rosow = 0.045 Q @ V,, = -4.5 V. High density cell design for extremely low Rygiow)- High power and current handling capability in a widely used surface mount package. i | 3 SOT-223 G SOT-223* G Absolute Maximum Ratings 1, = 25C unless otherwise noted (J23z) Symbol | Parameter NDT456P Units Voss Drain-Source Voltage 30 Vv Voss Gate-Source Voltage 420 I, Dra
S9933A NDS9936 NDS9952A NDS9958 NDS9945 NDS9947 NDS9948 NDS9952A Industry NDS9952A NDS9953 NDS9953A NDS9955 NDS9956 NDS9956A NDS9957 NDS9958 NDS9959 NDT014 NDT014L NDT2955 NDT3055 NDT3055L NDT410EL NDT451AN NDT451N NDT452AP NDT452P NDT453N NDT454P NDT455N NDT456P NMT2222A NMT2222A/2907A NMT2907A NMT3904 NMT3904/3906 NMT3906 NR431EF NZT44H8 NZT45H8 NZT651 NZT653 NZT6714 NZT6715 NZT6717 NZT6726 NZT6727 NZT6728 NZT6729 NZT7053 NZT749 NZT751 NZT753 P1086 P1086-18 P1087 P1087-18 P6KE100A P6KE100CA P6KE100RL P6KE10A P6KE10CA P6KE110A P6KE110ARL P6KE110CA P6KE11A P6KE11CA P6KE120A Fairchild Closest Equivalent Industry NDS9952A NDS9953A NDS9953A NDS9955 NDS9956A NDS9956A NDS9957 NDS9958 NDS9959 NDT014 NDT014L NDT2955 NDT3055 NDT3055L NDT410EL NDT451AN NDT451AN NDT452AP NDT452AP NDT453N NDT454P NDT455N NDT456P FMB2222A FMB2227A FMB2907A FMB3904 FMB3946 FMB3906 NR431EF NZT44H8 NZT45H8 NZT651 NZT653 NZT6714 NZT6715 NZT6717 NZT6726 NZT6727 NZT6728 NZT6729 NZT7053 NZT749 NZT751 NZT753 P1086 P1086
BF IRLL024NPBFI IRLL014NPBFI IRFL014NPBF 60 0.2 2.7 22 3.1 2 60 60 60 60 60 60 0.09 0.1 0.2 0.22 1.5 2 2.6 3.5 2.7 2.3 1 0.7 10.4 25 22 6.4 8 8 1.8 3 3.1 2.1 2 2 2 2 4 4 3 2.4 INF FCH VISH IR ZET ZET P Channel 30 30 0.035 0.065 7.3 5 -- 15 3 3 -3 -2.8 FCH NDT456PI FCH NDT452AP 0.3 0.4 0.5 0.8 5 2.5 1.45 1.8 1.17 0.45 15 5.8 14 4.68 4 3 1.5 3.1 1.8 2 -4 -2 -4 -2 -3.5 FCH INF VISH INF ZET 60 60 60 60 60 VISH IRLL014PBFI BSP318S NDT3055L IRFL014PBF IRFL1006PBF ZVN4206G ZVN2106G Discrete & Power Devices 2SK3704 2SK3705 CPH6602-TL-E CPH6612-TL-E MCH5837-TL-E CPH6613-TL-E Price Each 25+ Semiconductors FW232A-TL-E ECH8663R-TL-H ECH8402-TL-E FSS804-TL-E 2SK4043LS ATP202-TL-H ATP203-TL-H FW217-TL-E FSS218-TL-E SFT1403-TL-E ATP207-TL-H FSS273-TL-E SFT1407-TL-E 5LN01C-TB-E 5LN01M-TL-E MCH6604-TL-E MCH3416-TL-E CPH3430-TL-E CPH6429-TL-E 2SK3944-TD-E 2SK3614-TD-E FSS275-TL-E 2SK3702 2SK3703 173-5487 171-3436 171-3440 171-3441 171-3461 171-3442 173-5486 171-3453 173-5474 173-5442 173-5478 171-3467 171-3470 171
, 1206 PANASONIC (714) 373-7366 DIGIKEY P332FCT-ND R33,R34,R35,R36, R37,R38 34 1 SFB270 INDUCTOR, 27UH WILCO (317) 293-9300 (800) 611-2343* WILCO SFB270 L3 (PROVISIONAL) 35 3 IRF7406 SO-8 INTL RECT (310) 322-3331 NEWARK IRF7406 U1,U4,U8 (PROVISIONAL) 36 3 NDT456P MOSFET, P CHAN, SOT-223 NAT SEMI (408) 712-5800 (800) 272-9959* DIGIKEY NDT456PCT-ND U2,U6,U7 37 1 IRF9540 HEXFET, P-CH, TO-220AB INTL RECT (301) 322-3331 FAI IRF9540 U3 (PROVISIONAL) 38 2 IRF7403 SO-8 INTL RECT (301) 322-3331 NEWARK IRF7403 U5,U9 39 1 LT1118CST-5 IC, 5V REG, 800MA, SOT- LINEAR TECH (408) 432-1900 DIGIKEY LT1118CST-5-ND U10 223 40 2 LM6134AIM QUAD OP AMP, SO-14 NAT SEMI (408) 712-5800 (800) 272-9959* DIGIKEY LM6134AIM-ND U11,U12 41 1 DS1803Z-100K IC, DUAL EEPROM POT, DALLAS (214) 450-0400 NEWARK DS1803Z-100K/10K U13 SO-16 42 1 NJM7805 IC, 5V RES NJR CORP. (415) 961-3901 DIGIKEY NJM78MOSFA-MD U14 43 1 24LC65 IC, SERIAL EEPROM, SO-8 MICROCHIP (602) 786-7200 MICROCHIP 24LC65/SO U15 44 1 PIC16C711 IC, MICROCONTR
NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control. -7.5 A, -30 V. RDS(ON) = 0.03 @ VGS = -10 V RDS(ON) = 0.45 @ VGS = -4.5 V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________ D D D G Absolute Maximum Ratings G S S TA = 25C unless otherwise noted Symbol Parameter NDT456P Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage 20 V ID Drain Current 7.5
00 NDT3055TR-ND 1820.00/2,500 10 60 -- 0.15 -- 3.5 3 Single NDT3055LCT-ND 3.36 25.20 168.00 NDT3055LTR-ND 1820.00/2,500 10 -30 0.18 0.32 -- -3 3 Single NDT452PCT-ND 3.36 25.20 168.00 NDT452PTR-ND 1820.00/2,500 10 10 P-Chan. -30 0.035 0.05 -- -7.3 3 Single NDT456PCT-ND 6.00 45.00 300.00 NDT456PTR-ND 3187.50/2,500 -60 0.3 0.5 -- -2.5 3 Single NDT2955CT-ND 3.48 26.10 174.00 NDT2955TR-ND 1885.00/2,500 1-800-344-4539 202 218-681-6674 * FAX: 218-681-3380 * www.digikey.com .00625 8 7 6 5 4 3 2 1 -D5 & D6 -G6 -S2, S4, & S6 -G4 -D3 & D4 -S2, S4, & S6 -G2 -D1 & D2 2, 4, 6 are N-Chan Fig. 7 D5 D6 D7 D8 30 .0175 SOIC-16 COMMON SOURCE (TOP VIEW) Fig. 6 30 N-Chan. .024 SO-16 D5 & D6- 9 G5- 10 S5, S3, & S1- 11 G3- 12 D3 & D4- 13 S5, S3, & S1- 14 G1- 15 D1 & D2- 16 10 10 .179 .040 10 10 4G 3D 2D 1D SOT-8 (Top View) Power MOSFET (SO-8) NDS8926CT-ND 3-G2 2-S2 1-G1 SOT-6 (Top View) SuperSOTTM-8 (SOT-8) Compl. .00625 .0175 .0375 .016 4G 3S 2S 1 NC SO-8 (Top View) D5 D6 D7 D8 4G 3S 2S 1S SO-8 (Top View)
926 FDS8926A SO-8, Dual N NDT452P NDT452P SOT-223, P NDS8928 FDS8928A SO-8, Comp N/P NDT453N NDT453N SOT-223, N NDS8934 FDS8934A SO-8, Dual P NDT454P NDT454P SOT-223, P NDS8936 FDS6912A SO-8, Dual N NDT455N NDT455N SOT-223, N NDS8947 FDS8947A SO-8, Dual P NDT456P NDT456P SOT-223, P NDS8958 FDS8958A SO-8, Comp N/P PHN1001 FDS6680 SO-8, N NDS8961 FDS6961A SO-8, Dual N PHN1013 FDS6690A SO-8, N NDS9400 NDS9400A SO-8, P PHP125N06LT NDP7052L TO-220, N NDS9400A NDS9400A SO-8, P PHP125N06T NDP7052L TO-220, N NDS9405 FDS9435A SO-8, P PHP130N03LT FDP6670AL TO-220, N NDS9407 NDS9407 SO-8, P PHP130NO3T FDP6670AL TO-220, N NDS9410 FDS6612A SO-8, N PHP21N06LT NDP5060L TO-220, N NDS9410A1 FDS6612A SO-8, N PHP21N06T NDP4060L TO-220, N NDS9430 FDS9435A SO-8, P PHP24N03LT NDP603AL TO-220, N NDS9435 FDS9435A SO-8, P PHP24N03T FDP4030L TO-220, N Note: 1 NDS9410A has live pin one 1-5 Cross Reference Guide (continued) Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Numb
8961 NDS9400A NDS9407 NDS9410A NDS9435A NDS9925A NDS9933A NDS9936 NDS9945 NDS9947 NDS9948 NDS9952A NDS9953A NDS9955 NDS9956A NDS9957 NDS9958 NDS9959 NDT014 NDT014L NDT2955 NDT3055 NDT3055L NDT410EL NDT451AN NDT451N NDT452AP NDT452P NDT453N NDT454P NDT455N NDT456P NZT44H8 NZT45H8 NZT560 NZT560A NZT651 NZT660 NZT660A NZT6714 NZT6715 NZT6717 NZT6726 NZT6728 NZT6729 NZT7053 NZT751 P6KE10(C)A P6KE100(C)A P6KE11(C)A P6KE110(C)A P6KE12(C)A Page Number Part Number 13, 28 13, 28 13, 28 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 15 15 15 15 15 15 15 15 15 15 15 15 15 15 35 35 45 45 35 45 45 40 40 40 40 40 40 41 35 56 56 56 56 56 P6KE120(C)A P6KE13(C)A P6KE130(C)A P6KE15(C)A P6KE150(C)A P6KE16(C)A P6KE160(C)A P6KE170(C)A P6KE18(C)A P6KE180(C)A P6KE20(C)A P6KE200(C)A P6KE22(C)A P6KE220(C)A P6KE24(C)A P6KE250(C)A P6KE27(C)A P6KE30(C)A P6KE300(C)A P6KE33(C)A P6KE350(C)A P6KE36(C)A P6KE39(C)A P6KE400(C)A P6KE43(C)A P6KE440(C)A P6KE47(C)A P6KE51(C)A P6KE56(C)A P6KE6.8(C)A P6KE62(C)A P6K
, 1206 PANASONIC (714) 373-7366 DIGIKEY P332FCT-ND R33,R34,R35,R36, R37,R38 34 1 SFB270 INDUCTOR, 27UH WILCO (317) 293-9300 (800) 611-2343* WILCO SFB270 L3 (PROVISIONAL) 35 3 IRF7406 SO-8 INTL RECT (310) 322-3331 NEWARK IRF7406 U1,U4,U8 (PROVISIONAL) 36 3 NDT456P MOSFET, P CHAN, SOT-223 NAT SEMI (408) 712-5800 (800) 272-9959* DIGIKEY NDT456PCT-ND U2,U6,U7 37 1 IRF9540 HEXFET, P-CH, TO-220AB INTL RECT (301) 322-3331 FAI IRF9540 U3 (PROVISIONAL) 38 2 IRF7403 SO-8 INTL RECT (301) 322-3331 NEWARK IRF7403 U5,U9 39 1 LT1118CST-5 IC, 5V REG, 800MA, SOT- LINEAR TECH (408) 432-1900 DIGIKEY LT1118CST-5-ND U10 223 40 2 LM6134AIM QUAD OP AMP, SO-14 NAT SEMI (408) 712-5800 (800) 272-9959* DIGIKEY LM6134AIM-ND U11,U12 41 1 DS1803Z-100K IC, DUAL EEPROM POT, DALLAS (214) 450-0400 NEWARK DS1803Z-100K/10K U13 SO-16 42 1 NJM7805 IC, 5V RES NJR CORP. (415) 961-3901 DIGIKEY NJM78MOSFA-MD U14 43 1 24LC65 IC, SERIAL EEPROM, SO-8 MICROCHIP (602) 786-7200 MICROCHIP 24LC65/SO U15 44 1 PIC16C711 IC, MICROCONTR
pend mode in order to meet the <= 500uA total suspend current requirement (including external logic). Figure 4 shows how to use a discrete P-Channel Logic Level MOSFET to control the power to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This configuration is suitable for powering external logic where the normal supply current is <= 100mA and the logic to be controlled does not generate an appreciable current surge at power-up. For power switching external logic that takes over 100mA or generates a current surge on powerup we recommend that a dedicated power switch i.c with inbuilt "soft-start" is used instead of a MOSFET. A suitable power switch i.c. for such an application would be a Micrel (www.micrel.com) MIC2025-2BM or equivalent. Copyright (c) DLP Design 2002 Page 7 of 12 DLP-USB232M User's Manual Please note the following points in connection with power controlled designs: a) The logic to be controlled must have it's own reset circuitry so that it w