UFFER INPUT A BUFFER OUTPUT A V+ of output buffers and amplifiers are internally connected. Figure 2. Connection Diagram MAXIMUM RATINGS Symbol Value Unit Supply Voltage (Note 1) Rating VS 44 VDC or 22 V Power Dissipation, Tamb = 25 C (Still Air) (Note 2) NE5517N, NE5517AN NE5517D, AU5517D PD Thermal Resistance, Junction-to-Ambient D Package N Package RqJA Differential Input Voltage Diode Bias Current 1500 1125 140 94 mW C/W VIN 5.0 V ID 2.0 mA IABC 2.0 mA Output Short-Circuit Duration ISC Indefinite Buffer Output Current (Note 3) IOUT 20 Operating Temperature Range NE5517N, NE5517AN AU5517T Tamb Amplifier Bias Current Operating Junction Temperature 0 C to +70 C -40 C to +125 C mA C TJ 150 DC Input Voltage VDC +VS to -VS Storage Temperature Range Tstg -65 C to +150 C C Lead Soldering Temperature (10 sec max) Tsld 230 C C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is
UFFER INPUT A BUFFER OUTPUT A V+ of output buffers and amplifiers are internally connected. Figure 2. Connection Diagram MAXIMUM RATINGS Symbol Value Unit Supply Voltage (Note 1) Rating VS 44 VDC or 22 V Power Dissipation, Tamb = 25 C (Still Air) (Note 2) NE5517N, NE5517AN NE5517D, AU5517D PD Thermal Resistance, Junction-to-Ambient D Package N Package RqJA Differential Input Voltage Diode Bias Current 1500 1125 140 94 mW C/W VIN 5.0 V ID 2.0 mA IABC 2.0 mA Output Short-Circuit Duration ISC Indefinite Buffer Output Current (Note 3) IOUT 20 Operating Temperature Range NE5517N, NE5517AN AU5517T Tamb Amplifier Bias Current Operating Junction Temperature 0 C to +70 C -40 C to +125 C mA C TJ 150 DC Input Voltage VDC +VS to -VS Storage Temperature Range Tstg -65 C to +150 C C Lead Soldering Temperature (10 sec max) Tsld 230 C C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is
tures * * * * * Constant Impedance Buffers VBE of Buffer is Constant with Amplifier IBIAS Change Excellent Matching Between Amplifiers Linearizing Diodes High Output Signal-to-Noise Ratio PDIP-16 N SUFFIX CASE 648 Applications * * * * * * NE5517AN AWLYYWW NE5517N AWLYYWW 16 Multiplexers Timers Electronic Music Synthesizers Dolby HX Systems Current-controlled Amplifiers, Filters Current-controlled Oscillators, Impedances 1 A WL YY, Y WW = Assembly Location = Wafer Lot = Year = Work Week PIN CONNECTIONS N, D Packages IABCa 1 16 IABCb Da 2 15 Db +INa 3 14 +INb -INa 4 13 -INb VOa 5 12 VOb V- 6 11 V+ INBUFFERa 7 10 INBUFFERb VOBUFFERa 8 9 VOBUFFERb (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 14 of this data sheet. Semiconductor Components Industries, LLC, 2004 August, 2004 - Rev. 1 1 Publication Order Number: NE5517/D NE5517, NE5517A, AU5517 PIN DESCRIPTION Pin No. Symbol Description 1 IABCa 2 Da 3 +INa Non-inverted Input A 4
tive supply 12 VOb Output B 13 -INb Inverting input B 14 +INb Non-inverting input B 15 Db 16 IABCb Diode bias B Amplifier bias input B ORDERING INFORMATION TEMPERATURE RANGE ORDER CODE DWG # 16-Pin Plastic Dual In-Line Package (DIP) DESCRIPTION 0 to +70 C NE5517N SOT38-4 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 C NE5517AN SOT38-4 16-Pin Small Outline (SO) Package 0 to +70 C NE5517D SOT109-1 16-Pin Small Outline (SO) Package -40 to +125 C AU5517D SOT109-1 Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif. 2002 Dec 06 2 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier CIRCUIT SCHEMATIC V+ 11 D4 D6 Q12 Q14 Q6 Q13 7,10 Q10 8,9 Q7 Q11 2,15 VOUTPUT D3 D2 Q4 -INPUT 4,13 Q5 5,12 +INPUT 3,14 Q15 1,16 AMP BIAS INPUT Q16 Q3 Q2 D7 Q9 R1 Q1 D8 Q8 D1 D5 V- 6 SL00307 Figure 2. Circuit Schematic CONNECTION DIAGRAM B AMP BIAS INPUT B DIODE BIAS B INPUT (+) B INPUT (-) 16 15 14 13 B OUTPUT V+ (1) B BUFFER INPUT B BUFFER O
August 31, 1994 93Philips Samiconductors Linear Products Product specification Dual operational transconductance amplifier NE5517/5517A ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70C NE5517N 0406C 16-Pin Piastic Dual !n-Line Package (DIP) 0 to +70C NE5517AN 0406C 16-Pin Small Outline (SO) Package 0 to +70C NE5517D 0005D ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT Vs . Supply voltage! NE5517 36 Voc or +18 v NE5517A 44 Voc or +22 Vv Pp Power dissipation, Ta=25C (still air)2 NE5517N, NE5517AN 1500 mw NE5517D . 1125 mw VIN Differential input voltage 45 Vv Ip Diode bias current 2 mA laBc Amplifier bias current 2 mA Isc Output short-circuit duration indefinite lout Buffer output current? 20 mA Ta Operating temperature range NE5517N, NE5517AN 0G to +70 C Voc DC input voltage +V5 to -Vg Tste Storage temperature range -65C to +150C C Tsotp Lead soldering temperature (10sec max) 300 C NOTES: 1. For
V- BUFFER INPUT A BUFFER OUTPUT A V+ of output buffers and amplifiers are internally connected. Figure 2. Connection Diagram MAXIMUM RATINGS Rating Symbol Value Supply Voltage (Note 1) VS 44 VDC or 22 Power Dissipation, Tamb = 25 C (Still Air) (Note 2) PD NE5517N, NE5517AN NE5517D, AU5517D Differential Input Voltage Diode Bias Current Unit V mW 1500 1125 VIN 5.0 V ID 2.0 mA mA Amplifier Bias Current IABC 2.0 Output Short-Circuit Duration ISC Indefinite Buffer Output Current (Note 3) IOUT 20 Operating Temperature Range Tamb NE5517N, NE5517AN AU5517T 0 C to +70 C -40 C to +125 C mA C DC Input Voltage VDC +VS to -VS Storage Temperature Range Tstg -65 C to +150 C C Lead Soldering Temperature (10 sec max) Tsld 230 C 1. For selections to a supply voltage above 22 V, contact factory. 2. The following derating factors should be applied above 25 C N package at 12.0 mW/C D package at 9.0 mW/C. 3. Buffer output current should be limited so as to not exceed package dissipation. http://onsemi.com
tive supply 12 VOb Output B 13 -INb Inverting input B 14 +INb Non-inverting input B 15 Db 16 IABCb Diode bias B Amplifier bias input B ORDERING INFORMATION TEMPERATURE RANGE ORDER CODE DWG # 16-Pin Plastic Dual In-Line Package (DIP) DESCRIPTION 0 to +70 C NE5517N SOT38-4 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 C NE5517AN SOT38-4 16-Pin Small Outline (SO) Package 0 to +70 C NE5517D SOT109-1 16-Pin Small Outline (SO) Package -40 to +125 C AU5517D SOT109-1 Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif. 2002 Dec 06 2 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier CIRCUIT SCHEMATIC V+ 11 D4 D6 Q12 Q14 Q6 Q13 7,10 Q10 8,9 Q7 Q11 2,15 VOUTPUT D3 D2 Q4 -INPUT 4,13 Q5 5,12 +INPUT 3,14 Q15 1,16 AMP BIAS INPUT Q16 Q3 Q2 D7 Q9 R1 Q1 D8 Q8 D1 D5 V- 6 SL00307 Figure 2. Circuit Schematic CONNECTION DIAGRAM B AMP BIAS INPUT B DIODE BIAS B INPUT (+) B INPUT (-) 16 15 14 13 B OUTPUT V+ (1) B BUFFER INPUT B BUFFER O
ply 12 VOb Output B 13 -INb Inverting input B 14 +INb Non-inverting input B 15 Db 16 IABCb Diode bias B Amplifier bias input B ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # SOT38-4 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 C NE5517N 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 C NE5517AN SOT38-4 16-Pin Small Outline (SO) Package 0 to +70 C NE5517D SOT109-1 Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif. 2001 Aug 03 2 853-0887 26833 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A CIRCUIT SCHEMATIC V+ 11 D4 D6 Q12 Q14 Q6 Q13 7,10 Q10 8,9 Q7 Q11 2,15 VOUTPUT D3 D2 Q4 -INPUT 4,13 Q5 5,12 +INPUT 3,14 Q15 1,16 AMP BIAS INPUT Q16 Q3 Q2 D7 Q9 R1 Q1 D8 Q8 D1 D5 V- 6 SL00307 Figure 2. Circuit Schematic CONNECTION DIAGRAM B AMP BIAS INPUT B DIODE BIAS B INPUT (+) B INPUT (-) 16 15 14 13 B OUTPUT V+ (1) B BUFFER INPUT B BUFFER OUTPUT 12 11 10 9 5 6 7 8 - B + + A - 1 AMP BIAS INPUT A 2 DIODE BI
A V- BUFFER INPUT A BUFFER OUTPUT A V+ of output buffers and amplifiers are internally connected. Figure 2. Connection Diagram MAXIMUM RATINGS Rating Symbol Value Supply Voltage (Note 1) VS 44 VDC or 22 Power Dissipation, Tamb = 25 C (Still Air) (Note 2) NE5517N, NE5517AN NE5517D, AU5517D PD Unit V mW 1500 1125 Thermal Resistance, Junction-to-Ambient D Package N Package RqJA Differential Input Voltage Diode Bias Current C/W 140 94 VIN 5.0 V ID 2.0 mA IABC 2.0 mA Output Short-Circuit Duration ISC Indefinite Buffer Output Current (Note 3) IOUT 20 Operating Temperature Range NE5517N, NE5517AN AU5517T Tamb Amplifier Bias Current Operating Junction Temperature TJ 0 C to +70 C -40 C to +125 C 150 mA C C DC Input Voltage VDC +VS to -VS Storage Temperature Range Tstg -65 C to +150 C C Lead Soldering Temperature (10 sec max) Tsld 230 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Condit
tures * * * * * Constant Impedance Buffers VBE of Buffer is Constant with Amplifier IBIAS Change Excellent Matching Between Amplifiers Linearizing Diodes High Output Signal-to-Noise Ratio PDIP-16 N SUFFIX CASE 648 Applications * * * * * * NE5517AN AWLYYWW NE5517N AWLYYWW 16 Multiplexers Timers Electronic Music Synthesizers Dolby HX Systems Current-controlled Amplifiers, Filters Current-controlled Oscillators, Impedances 1 A WL YY, Y WW = Assembly Location = Wafer Lot = Year = Work Week PIN CONNECTIONS N, D Packages IABCa 1 16 IABCb Da 2 15 Db +INa 3 14 +INb -INa 4 13 -INb VOa 5 12 VOb V- 6 11 V+ INBUFFERa 7 10 INBUFFERb VOBUFFERa 8 9 VOBUFFERb (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 14 of this data sheet. Semiconductor Components Industries, LLC, 2004 June, 2004 - Rev. 0 1 Publication Order Number: NE5517/D NE5517, NE5517A, AU5517 PIN DESCRIPTION Pin No. Symbol Description 1 IABCa 2 Da 3 +INa Non-inverted Input A 4 -
A BUFFER OUTPUT A Philips Semiconductors Linear Products Product specification Dual operational transconductance amplifier NE5517/5517A ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70C NE5517N 0406C 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70C NE5517AN 0406C 16-Pin Small Outline (SO) Package 0 to +70C NE5517D 0005D ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT NE5517 36 VDC or 18 V NE5517A 44 VDC or 22 V NE5517N, NE5517AN 1500 mW NE5517D 1125 mW Supply voltage1 VS PD Power dissipation, TA=25C (still air)2 VIN Differential input voltage 5 V ID Diode bias current 2 mA IABC Amplifier bias current 2 mA ISC Output short-circuit duration IOUT Buffer output current3 TA Operating temperature range VDC DC input voltage TSTG Storage temperature range TSOLD Lead soldering temperature (10sec max) Indefinite NE5517N, NE5517AN 20 mA 0C to +70 C +VS to -VS -65C to +150C C 300 C NOTES: 1. For selection
. V4. of output buffers and amplifiers are internally connected. January 15, 1988 296Product Specification Dual Operational Transconductance Amplifier NE5517/55417A ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE 16-Pin Plastic DIP 0 to +70C NE5517N 16-Pin Plastic DIP 0 to +70C NE5517AN 16-Pin SO DIP 0 to +70C NE5517D ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT Vs Supply voltage NE5517 86 Voc or +18 Vv NES517A 44 Voc or 22 v Pp Power dissipation, Ta = 25C (still air) NE5517N, NE5517AN 1500 mw NE5517D 1125 mw VIN Differential input voltage +5 Vv 'p Diode bias current 2 mA laBc Amplifier bias current 2 mA Isc Output short-circuit duration Indefinite lout Buffer output current? 20 mA Ta Operating temperature range NE5517N, NES517AN 0C to +70 C Voc DC input voltage +Vs to -Vs Tste Storage temperature range -65C to +150 C TsoLp Lead soldering temperature (10sec max) 300 C NOTES: 14. For selections to a supply voltage above + 22V, contact factory. 2. Th
amplifiers are internally connected. 4-264 January 15, 1988Signetics Linear Products Product Specification Dual Operational Transconductance Amplifier NE5517/5517A ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE 16-Pin Plastic DIP 0 to +70C NE5517N 16-Pin Plastic DIP 0 to +70C NE5517AN 16-Pin SO DIP 0 to +70C NE5517D ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT Vs Supply voltage! NE5517 36 Voc or +18 Vv NE5517A 44 Voc or 22 v Pp Power dissipation, Ta = 25C (still air)? NE5517N, NE5517AN 1500 mw NE5517D 14125 mw VIN Differential input voltage 5 Vv Ip Diode bias current 2 mA labc Amplifier bias current 2 mA Isc Output short-circuit duration Indefinite lout Buffer output current? 20 mA Ta Operating temperature range NES5517N, NE5517AN Orc to +70 C Vpc DC input voltage +Vs5 to -Vs Tstc Storage temperature range -65C to +150 C Tsoip Lead soldering temperature (10sec max) 300 C NOTES: 1. For selections to a supply voltage above + 22V, contact factory. 2. The followi
HL LN32 LN38GCP LN38GP LN41YCPHL LN41YPHL LN48YCP LN48YP LN81RCPHL LN81RPHL LN242RP LN342GP LN442YP LN513RA LN513RK LN516RA LN516RK LN526RA LN526RK LR3140 LR4087 TP5087 LR4089 LR4173 LR40992 LR40993 LS285 A LS1240 LSC1008P IR91308 IR91308 UPC646D NE5517AN NE5517N L272 L293 L298 MC75107P MC75108L MC75107P MC75S110L MC75S110P MC8T13 MC8T14 MC8T23 HLMP3750 HLMP3050 HLMP3000 HLMP3002 HLMP1002 SG203D HLMP3517 HLMP3517 MV64521 HLMP3507 IL-211 MV1521 HLMP1503 HLMP3415 MV6353 HLMP1421 HLMP1401 HLMP3315 HLMP3301 MV57123 MV54123 MV53123 MAN71A MAN74A MAN6760 MAN6780 MAN6710 MAN6740 HLMP1321 UM95087 MK5089 MK5173N MK50992N T40993 KA2412A MC24012 LM3065N ECG870 UDN22933 MC8T24 MK5087 TCM5087 MK5089R MK50992N-5 CIC9185 KA2418 KA2101 GL3201 ECG712 HA1125 GL3201A LT1004C LT1004M LT1009C LT1009M LT1029C LT1029M LT1031 M 5532CP M0-1029 M5L8155P M5L8212P M5L8216P M5L8226P M5M23C100 UPD23C1000 LM385 LM185 LM336-2.5 LM136-2.5 LM336-5.0 LM136-5.0 LH0070 MC1404U10 S-50242W UPD8155P MB471 MB425 MB426 SM231024 TC531000
NE5517N LM324N LM324AN Description VCC (V) DC Voltage Gain (dB) Input Offset Voltage Typical (mV) Input Offset Current Typical (nA) Common-mode Rejection Ratio (dB) Unity Gain Bandwidth (MHz) Slew Rate (V/s) No of Leads Single Low Noise Single Low Noise Single Low Voltage Single Low Voltage Dual Internally Compensated Low Noise Dual Internally Compensated Low Noise Dual Low Power Dual Low Power Dual Operational Transconductance Amp Quad Low Power Quad Low Power 22 22 1.8 to 15 or 9 1.8 to 15 or 9 22 22 +32 or 16 +32 or 16 +36 or 18 +32 or 16 +32 or 16 100000 100000 N N 50000 50000 100 100 N 100 100 0.5 0.5 0.4 0.4 0.5 0.5 2.0 2.0 0.4 2.0 2.0 20.0 20.0 3.0 3.0 10.0 10.0 5.0 5.0 0.1 A 5.0 5.0 100 100 95 95 100 100 70 70 110 70 85 10.0 10.0 N N 10.0 10.0 1.0 1.0 N 1.0 1.0 13.00 13.00 0.25 0.25 9.00 9.00 0.30 0.30 50.00 0.30 0.30 8 8 8 8 8 16 8 8 16 14 14 Comparators Mfr.Os Type Complexity Max. Input Offset Voltage (mV) Single Dual Dual Dual Dual Dual Quad Quad 7.5 10.0 4.0 9.0 15.0 15.0 4.0 9.0 PDIP