Product Datasheet Search Results:
- 2N6796U
- Defense Supply Center Columbus
- N-Channel FET
- JAN2N6796U
- Defense Supply Center Columbus
- N-Channel FET
- JANHC2N6796U
- Defense Supply Center Columbus
- N-Channel FET
- JANKC2N6796U
- Defense Supply Center Columbus
- N-Channel FET
- JANS2N6796U
- Defense Supply Center Columbus
- N-Channel FET
- JANTX2N6796U
- Defense Supply Center Columbus
- N-Channel FET
- JANTXV2N6796U
- Defense Supply Center Columbus
- N-Channel FET
- 2N6796UJANTX
- International Rectifier
- Trans MOSFET N-CH 100V 8A 18-Pin LLCC
- 2N6796UJANTXV
- International Rectifier
- Trans MOSFET N-CH 100V 8A 18-Pin LLCC
Product Details Search Results:
Irf.com/2N6796UJANTX
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"75(Max) ns","Typical Turn-Off Delay Time":"40(Max) ns","Description":"Value","Maximum Continuous Drain Current":"8 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"30(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"207@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"45(Max) ns"}...
1361 Bytes - 07:51:07, 01 November 2024
Irf.com/2N6796UJANTXV
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"75(Max) ns","Typical Turn-Off Delay Time":"40(Max) ns","Description":"Value","Maximum Continuous Drain Current":"8 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"30(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"207@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"45(Max) ns"}...
1418 Bytes - 07:51:07, 01 November 2024
Irf.com/JANTX2N6796U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"134 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1547 Bytes - 07:51:07, 01 November 2024
Irf.com/JANTXV2N6796U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"134 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1552 Bytes - 07:51:07, 01 November 2024
Microsemi.com/2N6796U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"180 mOhm @ 5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250mA","Series":"-","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continuous...
1577 Bytes - 07:51:07, 01 November 2024
Microsemi.com/JAN2N6796U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"195 mOhm @ 8A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss...
1585 Bytes - 07:51:07, 01 November 2024
Microsemi.com/JANTX2N6796U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"195 mOhm @ 8A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss...
1601 Bytes - 07:51:07, 01 November 2024
Microsemi.com/JANTXV2N6796U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"195 mOhm @ 8A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss...
1609 Bytes - 07:51:07, 01 November 2024
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