Product Datasheet Search Results:

2N6796U.pdf23 Pages, 167 KB, Original
JAN2N6796U.pdf23 Pages, 167 KB, Original
JANHC2N6796U.pdf23 Pages, 167 KB, Original
JANKC2N6796U.pdf23 Pages, 167 KB, Original
JANS2N6796U.pdf23 Pages, 167 KB, Original
JANTX2N6796U.pdf23 Pages, 167 KB, Original
JANTXV2N6796U.pdf23 Pages, 167 KB, Original
2N6796UJANTX.pdf7 Pages, 198 KB, Original
2N6796UJANTX
International Rectifier
Trans MOSFET N-CH 100V 8A 18-Pin LLCC
2N6796UJANTXV.pdf7 Pages, 867 KB, Original
2N6796UJANTXV
International Rectifier
Trans MOSFET N-CH 100V 8A 18-Pin LLCC

Product Details Search Results:

Irf.com/2N6796UJANTX
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"75(Max) ns","Typical Turn-Off Delay Time":"40(Max) ns","Description":"Value","Maximum Continuous Drain Current":"8 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"30(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"207@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"45(Max) ns"}...
1361 Bytes - 07:51:07, 01 November 2024
Irf.com/2N6796UJANTXV
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"75(Max) ns","Typical Turn-Off Delay Time":"40(Max) ns","Description":"Value","Maximum Continuous Drain Current":"8 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"30(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"207@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"45(Max) ns"}...
1418 Bytes - 07:51:07, 01 November 2024
Irf.com/JANTX2N6796U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"134 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1547 Bytes - 07:51:07, 01 November 2024
Irf.com/JANTXV2N6796U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"134 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1552 Bytes - 07:51:07, 01 November 2024
Microsemi.com/2N6796U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"180 mOhm @ 5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250mA","Series":"-","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continuous...
1577 Bytes - 07:51:07, 01 November 2024
Microsemi.com/JAN2N6796U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"195 mOhm @ 8A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss...
1585 Bytes - 07:51:07, 01 November 2024
Microsemi.com/JANTX2N6796U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"195 mOhm @ 8A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss...
1601 Bytes - 07:51:07, 01 November 2024
Microsemi.com/JANTXV2N6796U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"195 mOhm @ 8A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss...
1609 Bytes - 07:51:07, 01 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
7B35E2852N679G1.pdf0.041Request