Product Datasheet Search Results:
- IRF644PBF
- International Rectifier
- 250V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220AB package
- IRF644PBF
- Vishay Presicion Group
- 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Siliconix_vishay/IRF644PBF
788 Bytes - 21:28:05, 12 January 2026
Vishay.com/IRF644PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"14A (Tc)","Gate Charge (Qg) @ Vgs":"68nC @ 10V","Product Photos":"TO-220AB","PCN Assembly/Origin":"SIL-099-2014-Rev-0 12/Nov/2014","Rds On (Max) @ Id, Vgs":"280 mOhm @ 8.4A, 10V","Datasheets":"IRF644 Packaging Information","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"50","Drain to Source Voltage (Vdss)":"250...
1829 Bytes - 21:28:05, 12 January 2026
Vishay_pcs/IRF644PBF
{"Category":"Power MOSFET","Dimensions":"10.51 x 4.65 x 15.49 mm","Maximum Continuous Drain Current":"14 A","Width":"4.65 mm","Maximum Drain Source Voltage":"250 V","Package Type":"TO-220AB","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 68 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"11 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"1300 pF @ 25 V","L...
1931 Bytes - 21:28:05, 12 January 2026





