Product Datasheet Search Results:
- IRF7342TRPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R
- IRF7342TR
- International Rectifier
- 3.4 A, 55 V, 0.105 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
- IRF7342TRPBF
- International Rectifier
- MOSFET 2P-CH 55V 3.4A 8-SOIC
- IRF7342TRPBF/BKN
- International Rectifier
- Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC T/R
- IRF7342TRPBF-EL
- International Rectifier
- Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC T/R
- IRF7342TRPBF
- Infineon Technologies Americas Corp. Infineon Technologies Americas Corp. Diodes Incorporated Honeywell Sensing And Productivity Solutions Diodes Incorporated Infineon Technologies Americas Corp.
- MOSFET 2P-CH 55V 3.4A 8-SOIC MOSFET 2N-CH 55V 4.7A 8-SOIC DIODE SCHOTTKY 40V 3A SMA SENSOR TEMP COMP 15PSIA DIP DIODE GEN PURP 1KV 1A SMA MOSFET N-CH 30V 13A 8-SOIC
Product Details Search Results:
Infineon.com/IRF7342TRPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3.4(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
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Irf.com/IRF7342TR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"114 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.4 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1050 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"27 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SE...
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Irf.com/IRF7342TRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"3.4A","Gate Charge (Qg) @ Vgs":"38nC @ 10V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"105 mOhm @ 3.4A, 10V","Datasheets":"IRF7342PbF","FET Type":"2 P-Channel (Dual)","PCN Packaging":"Package Drawing Update...
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Irf.com/IRF7342TRPBF/BKN
{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Turn-Off Delay Time":"43 ns","Description":"Value","Maximum Continuous Drain Current":"3.4 A","Package":"8SOIC","Typical Turn-On Delay Time":"14 ns","Mounting":"Surface Mount","Typical Rise Time":"10 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"105@10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typical Fall Time":"22 ns"}...
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Irf.com/IRF7342TRPBF-EL
{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Turn-Off Delay Time":"43 ns","Description":"Value","Maximum Continuous Drain Current":"3.4 A","Package":"8SOIC","Typical Turn-On Delay Time":"14 ns","Mounting":"Surface Mount","Typical Rise Time":"10 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"105@10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typical Fall Time":"22 ns"}...
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Null/IRF7342TRPBF
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