Product Datasheet Search Results:
1 Pages, 41 KB, Scan- IRF9610-001
- Vishay Presicion Group
- 1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET
1 Pages, 41 KB, Scan- IRF9610-001PBF
- Vishay Presicion Group
- 1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Vishay.com/IRF9610-001
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"7 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"1.75 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Packag...
1394 Bytes - 05:03:08, 12 January 2026
Vishay.com/IRF9610-001PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...
1456 Bytes - 05:03:08, 12 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 110-0015-04.pdf | 9.73 | 1 | Request | |
| 110-0016-02.pdf | 9.73 | 1 | Request | |
| 110-0015-00.pdf | 9.73 | 1 | Request | |
| 110-0016-01.pdf | 9.73 | 1 | Request | |
| 110-0015-02.pdf | 9.73 | 1 | Request | |
| 110-0015-03.pdf | 9.73 | 1 | Request | |
| 110-0016-00.pdf | 9.73 | 1 | Request | |
| 110-0014-00.pdf | 9.73 | 1 | Request |
