Product Datasheet Search Results:
- IRFBC40LC-002
- Vishay Presicion Group
- 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- IRFBC40LC-002PBF
- Vishay Presicion Group
- 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Vishay.com/IRFBC40LC-002
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6.2 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"...
1381 Bytes - 12:54:45, 14 January 2026
Vishay.com/IRFBC40LC-002PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transistor Application"...
1441 Bytes - 12:54:45, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| TC-002-02-18M0.pdf | 0.51 | 1 | Request | |
| TC-002-02-2M0.pdf | 0.51 | 1 | Request | |
| TC-002-02-12M0.pdf | 0.51 | 1 | Request | |
| TC-002-02-4M5.pdf | 0.51 | 1 | Request | |
| TC-002-02-2M5.pdf | 0.51 | 1 | Request | |
| HCC-002.pdf | 9.67 | 1 | Request |





