Product Datasheet Search Results:
4 Pages, 117 KB, Original- IXFX32N50Q
- Ixys Corporation
- 500V HiPerFET power MOSFET Q-class
4 Pages, 573 KB, Original- IXFX32N50Q
- Zilog
- 32 A, 500 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Ixys.com/IXFX32N50
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"Plus247","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 4mA","Series":"HiPerFET\u2122","Standard Package":"30","Supplier Device Package":"PLUS247\u2122-3","Datasheets":"IXFX32N50","Rds On (Max) @ Id, Vgs":"150 mOhm @ 15A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"360W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"500V","Current ...
1438 Bytes - 05:08:54, 17 January 2026
Ixys.com/IXFX32N50Q
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"Plus247","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 4mA","Series":"HiPerFET\u2122","Standard Package":"30","Supplier Device Package":"PLUS247\u2122-3","Datasheets":"IXF(K,X)32N50Q","Rds On (Max) @ Id, Vgs":"160 mOhm @ 16A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"416W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"500V","C...
1458 Bytes - 05:08:54, 17 January 2026
Zilog.com/IXFX32N50
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHAN...
1501 Bytes - 05:08:54, 17 January 2026
Zilog.com/IXFX32N50Q
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"128 A","Channel Type":"N-CHAN...
1521 Bytes - 05:08:54, 17 January 2026
