Product Datasheet Search Results:

ZVN4310ASM.pdf1 Pages, 63 KB, Scan
ZVN4310ASM
Diodes Incorporated
900 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
ZVN4310ASMTA.pdf1 Pages, 63 KB, Scan
ZVN4310ASMTA
Diodes Incorporated
900 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
ZVN4310ASMTC.pdf1 Pages, 63 KB, Scan
ZVN4310ASMTC
Diodes Incorporated
900 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Product Details Search Results:

Diodes.com/ZVN4310ASM
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.6500 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application"...
1449 Bytes - 08:30:15, 16 January 2026
Diodes.com/ZVN4310ASMTA
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.6500 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application"...
1460 Bytes - 08:30:15, 16 January 2026
Diodes.com/ZVN4310ASMTC
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.6500 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application"...
1462 Bytes - 08:30:15, 16 January 2026

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
DIM1200ASM45_TS.pdf0.381Request
DIM750ASM65_TF000.pdf0.431Request
DIM1200ASM45_TF000.pdf0.411Request
DIM1200ASM33_F000.pdf0.541Request
TIM750ASM65-PSA011.pdf0.991Request
DIM1200ASM45_TL001.pdf0.401Request
DIM1500ASM33_TF001.pdf0.421Request
TIM1200ASM45-PSA011.pdf0.561Request
DIM1000ASM65_UF000.pdf0.481Request
DIM1200ASM45_TS001.pdf0.391Request
DIM1500ASM33_TS001.pdf0.561Request
DIM750ASM65_TS000.pdf0.451Request