Product Datasheet Search Results:

2N4957.pdf2 Pages, 137 KB, Original
2N4957
Advanced Semiconductor, Inc.
Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-72
2N4957.pdf9 Pages, 183 KB, Scan
2N4957
Thomson-csf
Signal Transistors and Field Effect Transistors 1976
2N4957.pdf16 Pages, 94 KB, Original
2N4957
Defense Supply Center Columbus
PNP Silicon Transistor, Amplifier

Product Details Search Results:

Advancedsemiconductor.com/2N4957
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-72, 4 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"1200 MHz","Collector Current-Max (IC)":"0.0300 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Number of Terminals":"4","Number of Elements":"1"}...
1158 Bytes - 02:04:23, 08 December 2024
Dla.mil/2N4957+JAN
{"Absolute Max. Power Diss. (W)":"200m","Noise Figure Max. (dB)":"3.0","V(BR)CBO (V)":"30","h(FE) Min. Static Current Gain":"20","I(C) Abs.(A) Collector Current":"30m","h(FE) Max. Current gain.":"150","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"10","Package":"TO-72","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"1.2G","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JAN2N4957","@I(C) (A) (Test Condition)":"2.0m","Power Gain Min. (dB)":...
1108 Bytes - 02:04:23, 08 December 2024
Dla.mil/2N4957+JANTX
{"Absolute Max. Power Diss. (W)":"200m","Noise Figure Max. (dB)":"3.0","V(BR)CBO (V)":"30","h(FE) Min. Static Current Gain":"20","I(C) Abs.(A) Collector Current":"30m","h(FE) Max. Current gain.":"150","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"10","Package":"TO-72","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"1.2G","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANTX2N4957","@I(C) (A) (Test Condition)":"2.0m","Power Gain Min. (dB)...
1120 Bytes - 02:04:23, 08 December 2024
Dla.mil/2N4957+JANTXV
{"Absolute Max. Power Diss. (W)":"200m","Noise Figure Max. (dB)":"3.0","V(BR)CBO (V)":"30","h(FE) Min. Static Current Gain":"20","I(C) Abs.(A) Collector Current":"30m","h(FE) Max. Current gain.":"150","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"10","Package":"TO-72","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"1.2G","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANTXV2N4957","@I(C) (A) (Test Condition)":"2.0m","Power Gain Min. (dB...
1126 Bytes - 02:04:23, 08 December 2024
Microchip.com/JANTXV2N4957
993 Bytes - 02:04:23, 08 December 2024
Microsemi.com/2N4957
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30mA","Noise Figure (dB Typ @ f)":"3.5dB @ 450MHz","Transistor Type":"PNP","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-72","Packaging":"Bulk","Datasheets":"2N4957","Power - Max":"200mW","Gain":"25dB","Package / Case":"TO-72-3 Metal Can","Mounting Type":"Through Hole","DC Current Gain (hFE) (Min...
1374 Bytes - 02:04:23, 08 December 2024
Microsemi.com/2N4957+JANTX
703 Bytes - 02:04:23, 08 December 2024
Microsemi.com/2N4957JANTX
698 Bytes - 02:04:23, 08 December 2024
Microsemi.com/2N4957UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30mA","Noise Figure (dB Typ @ f)":"3.5dB @ 450MHz","Transistor Type":"PNP","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"*","Packaging":"*","Datasheets":"2N4957UB","Power - Max":"200mW","Gain":"25dB","Package / Case":"*","Mounting Type":"*","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 10V","Ot...
1353 Bytes - 02:04:23, 08 December 2024
Microsemi.com/JAN2N4957
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30mA","Noise Figure (dB Typ @ f)":"3.5dB @ 450MHz","Transistor Type":"PNP","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-72","Packaging":"Bulk","Datasheets":"2N4957","Power - Max":"200mW","Gain":"25dB","Package / Case":"TO-72-3 Metal Can","Mounting Type":"Through Hole","DC Current Gain (hFE) (Min...
1392 Bytes - 02:04:23, 08 December 2024
Microsemi.com/JAN2N4957UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30mA","Noise Figure (dB Typ @ f)":"3.5dB @ 450MHz","Transistor Type":"PNP","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"*","Packaging":"*","Datasheets":"2N4957UB","Power - Max":"200mW","Gain":"25dB","Package / Case":"*","Mounting Type":"*","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 10V","Ot...
1371 Bytes - 02:04:23, 08 December 2024
Microsemi.com/JANJ2N4957
{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"WIRE","Number of Terminals":"3","Collector-emitter Voltage-Max":"30 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.0300 A","Terminal Position":"BOTTOM","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"CYLINDRICAL","Number of Elements":"1"}...
1145 Bytes - 02:04:23, 08 December 2024

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