Product Datasheet Search Results:

2N7002ET/R.pdf12 Pages, 94 KB, Original
2N7002ET/R
Nxp Semiconductors / Philips Semiconductors
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.385 A; R<sub>DS(on)</sub>: 3000@10V4000@4.5V mOhm; V<sub>DS</sub>max: 60 V
2N7002ET/R.pdf11 Pages, 279 KB, Original
2N7002ET/R
Philips Semiconductors / Nxp Semiconductors
FET Transistor, N Channel, ID 0.385A, Tape and Reel

Product Details Search Results:

Onsemi.com/2N7002ET1G
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"260mA (Ta)","Gate Charge (Qg) @ Vgs":"0.81nC @ 5V","Product Photos":"SOT-23-3","PCN Design/Specification":"Glue Mount Process 11/July/2008 Copper Wire 26/May/2009","Rds On (Max) @ Id, Vgs":"2.5 Ohm @ 240mA, 10V","Datasheets":"2N7002E Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"...
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Onsemi.com/2N7002ET3G
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"2.5 Ohm @ 240mA, 10V","FET Feature":"Standard","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"-","Standard Package":"10,000","PCN Design/Specification":"Copper Wire 26/May/2009","Supplier Device Package":"SOT-23-3 (TO-236)","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Power - Max":"300mW","Package / Case":"TO-236-3, SC-59, SOT-23-3","Mounting Type":"S...
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Onsemi.com/2N7002ET7G
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.42(W)","Continuous Drain Current":"0.26(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
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Onsemi.com/S2N7002ET1G
{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Rise Time":"1.2 ns","Typical Turn-Off Delay Time":"4.8 ns","Description":"Value","Maximum Continuous Drain Current":"0.26 A","Package":"3SOT-23","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"1.7 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"2500@10V mOhm","Manufacturer":"ON Semiconductor","Typical Fall Time":"3.6 ns"}...
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Documentation and Support

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