Product Details Search Results:
Toshiba.co.jp/2SK1365(F)
{"Category":"MOSFET","Maximum Drain Source Voltage":"1000 V","Typical Rise Time":"25 ns","Description":"Value","Maximum Continuous Drain Current":"7 A","Package":"3TO-3P(N)IS","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1800@10V mOhm","Manufacturer":"Toshiba","Typical Fall Time":"20 ns"}...
1295 Bytes - 10:36:59, 12 January 2026
Toshiba.co.jp/2SK1365F
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"7 A","Mounting":"Through Hole","Drain-Source On-Volt":"1000 V","Pin Count":"3 +Tab","Power Dissipation":"90 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-3P(N)IS","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"1.8 ohm","Number of Elements":"1"}...
1452 Bytes - 10:36:59, 12 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK1365.pdf | 0.39 | 1 | Request |






