Product Datasheet Search Results:

2SK1365.pdf5 Pages, 277 KB, Scan
2SK1365
Toshiba
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (pi-MOSII.5)
2SK1365(F).pdf59 Pages, 1814 KB, Original
2SK1365(F)
Toshiba
MOSFET N-CH 1KV 7A TO-3PN - 2SK1365(F)
2SK1365F.pdf6 Pages, 407 KB, Original
2SK1365F
Toshiba
Trans MOSFET N-CH 1KV 7A 3-Pin(3+Tab) TO-3P(N)IS

Product Details Search Results:

Toshiba.co.jp/2SK1365(F)
{"Category":"MOSFET","Maximum Drain Source Voltage":"1000 V","Typical Rise Time":"25 ns","Description":"Value","Maximum Continuous Drain Current":"7 A","Package":"3TO-3P(N)IS","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1800@10V mOhm","Manufacturer":"Toshiba","Typical Fall Time":"20 ns"}...
1295 Bytes - 10:36:59, 12 January 2026
Toshiba.co.jp/2SK1365F
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"7 A","Mounting":"Through Hole","Drain-Source On-Volt":"1000 V","Pin Count":"3 +Tab","Power Dissipation":"90 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-3P(N)IS","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"1.8 ohm","Number of Elements":"1"}...
1452 Bytes - 10:36:59, 12 January 2026

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