Product Datasheet Search Results:
4 Pages, 76 KB, Original- 2SK2653-01R
- Fuji Electric Corp. Of America
- 6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fujielectric.co.jp/2SK2653-01R
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"900 V","Tr...
1490 Bytes - 20:49:32, 16 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2653-01R.pdf | 0.07 | 1 | Request |
