Product Datasheet Search Results:
4 Pages, 121 KB, Original- 2SK3608-SJ
- Fuji Electric Co., Ltd.
- N-CHANNEL SILICON POWER MOSFET
Product Details Search Results:
Fujielectric.co.jp/2SK3608-01L
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"126 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1516 Bytes - 00:41:27, 16 January 2026
Fujielectric.co.jp/2SK3608-01S
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"126 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1551 Bytes - 00:41:27, 16 January 2026
Fujielectric.co.jp/2SK3608-01SJ
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"126 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1519 Bytes - 00:41:27, 16 January 2026
