Product Datasheet Search Results:
7 Pages, 34 KB, Original- 2SK973
- Renesas Technology / Hitachi Semiconductor
- Silicon N-Channel MOS FET
7 Pages, 39 KB, Original- 2SK973L
- Renesas Technology / Hitachi Semiconductor
- Silicon N-Channel MOS FET
7 Pages, 39 KB, Original- 2SK973S
- Renesas Technology / Hitachi Semiconductor
- Silicon N-Channel MOS FET
2 Pages, 98 KB, Scan- 2SK973(L)(S)
- N/a
- FET Data Book
1 Pages, 101 KB, Scan- 2SK973(L)
- Renesas Electronics
- 2 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
10 Pages, 233 KB, Original- 2SK973L-E
- Renesas Technology
- 2SK973L-E
1 Pages, 101 KB, Scan- 2SK973(S)
- Renesas Electronics
- 2 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Hitachi.co.jp/2SK973L
{"C(iss) Max. (F)":"240p","Absolute Max. Power Diss. (W)":"10","g(fs) Max, (S) Trans. conduct,":"2.0","r(DS)on Max. (Ohms)":"0.5","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"10u","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.0","@(VDS) (V) (Test Condition)":"20","Package":"TO-252AA","I(DSS) Min. (A)":"100u","Military":"N","t(r) Max. (s) Rise time":"15n","V(BR)DSS (V)":"60","t(f) Max. (s) Fall time.":"40n","g(fs) Min. (S) Trans. conduct.":"1.2","I(D) Abs. Drain Current (A)":"2.0"}...
1008 Bytes - 18:54:28, 15 January 2026
Hitachi.co.jp/2SK973S
{"C(iss) Max. (F)":"240p","Absolute Max. Power Diss. (W)":"10","g(fs) Max, (S) Trans. conduct,":"2.0","r(DS)on Max. (Ohms)":"0.5","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"10u","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.0","@(VDS) (V) (Test Condition)":"20","Package":"TO-252AA","I(DSS) Min. (A)":"100u","Military":"N","t(r) Max. (s) Rise time":"15n","V(BR)DSS (V)":"60","t(f) Max. (s) Fall time.":"40n","g(fs) Min. (S) Trans. conduct.":"1.2","I(D) Abs. Drain Current (A)":"2.0"}...
1008 Bytes - 18:54:28, 15 January 2026
Renesas.com/2SK973(L)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Number of Terminals":"3","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"2 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Package Styl...
1269 Bytes - 18:54:28, 15 January 2026
Renesas.com/2SK973L-E
702 Bytes - 18:54:28, 15 January 2026
Renesas.com/2SK973(S)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Max...
1298 Bytes - 18:54:28, 15 January 2026
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