- BCR10CM-12
- Renesas Technology / Hitachi Semiconductor
- Medium Power Use Non-Insulated Type, Planar Passivation Type Triac
- BCR10CM-12LB
- Renesas Technology / Hitachi Semiconductor
- Thyristor, Triac for Medium Power Use
- BCR10CM-12LB-A8
- Renesas Technology / Hitachi Semiconductor
- Thyristor, Triac for Medium Power Use
- BCR10CM-12
- Mitsubishi Electric & Electronics Usa, Inc.
- 600 V, 10 A, TRIAC, TO-220
- BCR10CM-12
- Mitsubishi Electric Semiconductor
- Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
- BCR10CM-12
- N/a
- Power and Industrial Semiconductors Data Book
- BCR10CM-12
- Powerex Power Semiconductors
- Triac 10 Amperes/400-600 Volts
- BCR10CM-12L
- Powerex Power Semiconductors
- Triac 10 Amperes/400-600 Volts
- BCR10CM-12LA
- Renesas Electronics
- 600 V, 10 A, TRIAC, TO-220AB
- BCR10CM-12LA#B00
- Renesas Electronics
- TRIAC 600V 10A TO-220 - BCR10CM-12LA#B00
- BCR10CM-12LB
- Renesas Electronics
- 600 V, 10 A, TRIAC, TO-220AB
- BCR10CM-12LB-A8
- Renesas Electronics
- 600 V, 10 A, TRIAC, TO-220AB
- BCR10CM-12LB#BB0
- Renesas Technology
- TRIAC Diode 600V 10A(RMS) 100A 3-Pin(3+Tab) TO-220 Tube
- BCR10CM-12LB(#BB0)
- Renesas Technology
- BCR10CM-12LB(#BB0)