- BCR12PM-12
- Renesas Technology / Hitachi Semiconductor
- Medium Power Use Insulated Type, Planar Passivation Type Triac
- BCR12PM-12LB
- Renesas Technology / Hitachi Semiconductor
- Thyristor, Triac for Medium Power Use
- BCR12PM-12LB-A8
- Renesas Technology / Hitachi Semiconductor
- Thyristor, Triac for Medium Power Use
- BCR12PM-12LG
- Renesas Technology / Hitachi Semiconductor
- Triac Medium Power Use
- BCR12PM-12LG-A8
- Renesas Technology / Hitachi Semiconductor
- Triac Medium Power Use
- BCR12PM-12
- Mitsubishi Electric & Electronics Usa, Inc.
- 600 V, 12 A, TRIAC, TO-220F
- BCR12PM-12
- Mitsubishi Electric Semiconductor
- Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
- BCR12PM-12
- Powerex Power Semiconductors
- Isolated Triac 12 Amperes/400-600 Volts
- BCR12PM-12L
- Powerex, Inc. - Pa
- 600 V, 12 A, TRIAC, TO-220
- BCR12PM-12LA
- Renesas Electronics
- 600 V, 12 A, TRIAC, TO-220AB
- BCR12PM-12LA-A8
- Renesas Electronics
- 600 V, 12 A, TRIAC, TO-220AB
- BCR12PM-12LA#B00
- Renesas Technology
- TRIAC Diode 600V 12A(RMS) 120A 3-Pin(3+Tab) TO-220F Bag
- BCR12PM-12LB
- Renesas Electronics
- 600 V, 12 A, TRIAC, TO-220AB
- BCR12PM-12LB-A8
- Renesas Electronics
- 600 V, 12 A, TRIAC, TO-220AB
- BCR12PM-12LC
- Renesas Electronics
- 600 V, 12 A, TRIAC, TO-220AB
- BCR12PM-12LG
- Renesas Electronics
- 600 V, 12 A, TRIAC, TO-220AB