- BCR8CM-12
- Renesas Technology / Hitachi Semiconductor
- Medium Power Use Non-Insulated Type, Planar Passivation Type Triac
- BCR8CM
- Mitsubishi Electric & Electronics Usa, Inc.
- 600 V, 8 A, TRIAC, TO-220
- BCR8CM-12
- Mitsubishi Electric & Electronics Usa, Inc.
- 600 V, 8 A, TRIAC, TO-220
- BCR8CM-8
- Mitsubishi Electric & Electronics Usa, Inc.
- 400 V, 8 A, TRIAC, TO-220
- BCR8CM-8L
- Mitsubishi Electric & Electronics Usa, Inc.
- 400 V, 8 A, TRIAC, TO-220
- BCR8CM
- Mitsubishi Electric Semiconductor
- MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
- BCR8CM-12
- Mitsubishi Electric Semiconductor
- Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
- BCR8CM-8
- Mitsubishi Electric Semiconductor
- THYRISTOR TRIAC 400V 80A 3TO-220
- BCR8CM
- Powerex Power Semiconductors
- Triac 8 Amperes/400-600 Volts
- BCR8CM-12
- Powerex Power Semiconductors
- 600V, 8A triac
- BCR8CM-12L
- Powerex, Inc. - Pa
- 600 V, 8 A, TRIAC, TO-220
- BCR8CM-8L
- Powerex, Inc. - Pa
- 400 V, 8 A, TRIAC, TO-220
- BCR8CM-12LA
- Renesas Electronics
- 600 V, 8 A, TRIAC, TO-220AB
- BCR8CM-12LA#B00
- Renesas Electronics
- TRIAC 600V 8A TO-220 - BCR8CM-12LA#B00
- BCR8CM-12LB
- Renesas Electronics
- 600 V, 8 A, TRIAC, TO-220AB
- BCR8CM-12LB-A8
- Renesas Electronics
- 600 V, 8 A, TRIAC, TO-220AB