- BCR8CS-12
- Renesas Technology / Hitachi Semiconductor
- Medium Power Use Non-Insulated Type, Planar Passivation Type Triac
- BCR8CS-12
- Mitsubishi Electric & Electronics Usa, Inc.
- 600 V, 8 A, TRIAC, TO-220S
- BCR8CS-12
- Mitsubishi Electric Semiconductor
- Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
- BCR8CS-12L
- Powerex Power Semiconductors
- 600V, 8A triac
- BCR8CS-12LA
- Renesas Electronics
- 600 V, 8 A, TRIAC
- BCR8CS-12LA#B00
- Renesas Technology
- BCR8CS-12LA#B00
- BCR8CS-12LA(#B00)
- Renesas Technology
- BCR8CS-12LA(#B00)
- BCR8CS-12LB
- Renesas Electronics
- 600 V, 8 A, TRIAC
- BCR8CS-12LB#B00
- Renesas Electronics
- TRIAC,600V V(DRM),8A I(T)RMS,TO-263ABVAR
- BCR8CS-12LB-T11
- Renesas Electronics
- 600 V, 8 A, TRIAC
- BCR8CS-12LB-T11#B00
- Renesas Electronics
- TRIAC,600V V(DRM),8A I(T)RMS,TO-263ABVAR