Product Datasheet Search Results:
10 Pages, 657 KB, Original- BSC196N10NSG
- Infineon Technologies
- Trans MOSFET N-CH 100V 8.5A 8-Pin TDSON EP
10 Pages, 657 KB, Original- BSC196N10NSGATMA1
- Infineon Technologies
- Trans MOSFET N-CH 100V 8.5A 8-Pin TDSON EP
Product Details Search Results:
Infineon.com/BSC196N10NSG
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"60 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0196 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"164 A","Channel Type":"N-CHANNEL","China RoHS ...
1615 Bytes - 10:15:29, 12 January 2026
Infineon.com/BSC196N10NSGATMA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"22 ns","Typical Turn-Off Delay Time":"18 ns","Description":"Value","Maximum Continuous Drain Current":"8.5 A","Package":"8TDSON EP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"16 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"19.6@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"5 ns"}...
1517 Bytes - 10:15:29, 12 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSC196N10NSG.pdf | 0.64 | 1 | Request |
