Product Datasheet Search Results:
- BSM100GAL120DLCK
- Eupec Power Semiconductors
- IGBT, IGBT Module, VCE 1200 V, IC 205 A
- BSM100GAL120DLCK
- Infineon Technologies Ag
- 205 A, 1200 V, N-CHANNEL IGBT
Product Details Search Results:
Infineon.com/BSM100GAL120DLCK
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"480 ns","Collector Current-Max (IC)":"205 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"110 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","China RoHS Co...
1466 Bytes - 12:34:41, 09 October 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM100GAL120DLCK.pdf | 0.24 | 1 | Request |





