Product Datasheet Search Results:
5 Pages, 68 KB, Original- BSM50GAL120DN2
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Product Details Search Results:
Infineon.com/BSM50GAL120DN2
{"Gate-Emitter Leakage Current":"400 nA","Continuous Collector Current at 25 C":"78 A","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"400 W","Product":"IGBT Silicon Modules","Collector- Emitter Voltage VCEO Max":"1200 V","Packaging":"Tray","Maximum Gate Emitter Voltage":"20 V","Mounting Style":"Screw","Package / Case":"Half Bridge GAL 1","Collector-Emitter Saturation Voltage":"2.5 V","Configur...
1689 Bytes - 15:51:50, 11 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM50GAL120DN2.pdf | 0.08 | 1 | Request |
