- BCR08AS-12A
- Renesas Technology / Hitachi Semiconductor
- THYRISTOR SCR 600V 8A 3SOT-89
- BCR08AS-12A-T13
- Renesas Technology / Hitachi Semiconductor
- Thyristor TRIAC 600V 8A 4SOT-89 T/R
- BCR08AS-12A-T14
- Renesas Technology / Hitachi Semiconductor
- Triac Low Power Use
- BCR08AS-12A-T24
- Renesas Technology / Hitachi Semiconductor
- Triac Low Power Use
- BCR08AS-12
- Mitsubishi Electric Semiconductor
- THYRISTOR TRIAC 600V 8A 3SOT-89
- CR08AS-12
- Mitsubishi Electric Semiconductor
- Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
- CR08AS-12
- Powerex, Inc. - Pa
- 1.26 A, 600 V, SCR
- BCR08AS-12A
- Renesas Electronics
- 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC
- BCR08AS-12A(T13#X9)
- Renesas Technology
- TRIAC 600V 0.8A(RMS) 8A 4-Pin(3+Tab) UPAK
- CR08AS-12ABT14#B10
- Renesas Technology
- SCR Diode 600V 1.26A(RMS) 10A 4-Pin(3+Tab) UPAK
- CR08AS-12-BT14
- Renesas Electronics
- 1.26 A, 600 V, SCR
- CR08AS-12-BT14#F10
- Renesas Technology
- CR08AS-12-BT14#F10
- CR08AS-12-ET14
- Renesas Electronics
- 1.26 A, 600 V, SCR