Product Datasheet Search Results:
9 Pages, 1724 KB, Original- FD900R12IP4D
- Infineon Technologies Ag
- 1200 V, N-CHANNEL IGBT
Product Details Search Results:
Infineon.com/FD900R12IP4D
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"1300 ns","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"370 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE AND THERMISTOR","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","Trans...
1416 Bytes - 07:06:40, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FD900R12IP4DV.pdf | 1.68 | 1 | Request | |
| FD900R12IP4D.pdf | 1.69 | 1 | Request | |
| FD900R12IP4D.pdf | 0.49 | 1 | Request | |
| TI_FD900R12IP4D.pdf | 1.69 | 1 | Request | |
| TI_FD900R12IP4DV.pdf | 1.68 | 1 | Request |
