Product Datasheet Search Results:

FDN337N.pdf5 Pages, 71 KB, Original
FDN337N
Fairchild Semiconductor Corporation
2200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
FDN337N**CN-SCI.pdf109 Pages, 27700 KB, Original
FDN337ND87Z.pdf5 Pages, 71 KB, Original
FDN337ND87Z
Fairchild Semiconductor Corporation
2200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
FDN337NL99Z.pdf5 Pages, 71 KB, Original
FDN337NL99Z
Fairchild Semiconductor Corporation
2200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
FDN337N_NL.pdf5 Pages, 71 KB, Original
FDN337N_NL
Fairchild Semiconductor
N-Channel Logic-Level Enhancement Mode Field Effect Transistor
FDN337NS62Z.pdf5 Pages, 71 KB, Original
FDN337NS62Z
Fairchild Semiconductor Corporation
2200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
FDN337N.pdf7 Pages, 189 KB, Original
FDN337N
On Semiconductor
Trans MOSFET N-CH 30V 2.2A 3-Pin SOT-23 T/R
FDN337N.pdf67 Pages, 163 KB, Original
FDN337N
Toshiba
Power MOSFETs Cross Reference Guide

Product Details Search Results:

Fairchildsemi.com/FDN337N
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"2.2A (Ta)","Gate Charge (Qg) @ Vgs":"9nC @ 4.5V","Product Photos":"SOT-23-3","PCN Design/Specification":"Mold Compound 08/April/2008","Product Training Modules":"High Voltage Switches for Power Processing SMPS Power Switch","Rds On (Max) @ Id, Vgs":"65 mOhm @ 2.2A, 4.5V","Datasheets":"FDN337N Molded P...
2063 Bytes - 04:26:56, 15 January 2026
Fairchildsemi.com/FDN337N**CN-SCI
750 Bytes - 04:26:56, 15 January 2026
Fairchildsemi.com/FDN337ND87Z
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SUPERSOT-3","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2.2 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configura...
1420 Bytes - 04:26:56, 15 January 2026
Fairchildsemi.com/FDN337NL99Z
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SUPERSOT-3","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2.2 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configura...
1420 Bytes - 04:26:56, 15 January 2026
Fairchildsemi.com/FDN337NS62Z
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SUPERSOT-3","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2.2 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configura...
1418 Bytes - 04:26:56, 15 January 2026
Onsemi.com/FDN337N
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b18(V)","Channel Mode":"Enhancement","Power Dissipation":"0.5(W)","Continuous Drain Current":"2.2(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1457 Bytes - 04:26:56, 15 January 2026

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