Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Gate Charge (Qg) @ Vgs":"1.5nC @ 4.5V","Product Photos":"SOT-23-3","PCN Assembly/Origin":"SOT23 Manufacturing Source 31/May2013 Qualification of Manufacturing Source 25/Nov/2013 Assembly Site Add 21/Jul/2015","PCN Design/Specification":"Mold Compound 12/Dec/2007","Product Training Modules":"High Voltage Switches for Power Processing SMPS Power ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"460mA (Ta)","Gate Charge (Qg) @ Vgs":"1.5nC @ 4.5V","Product Photos":"SOT-23-3","PCN Design/Specification":"Mold Compound 12/Dec/2007","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"1.1 Ohm @ 500mA, 4.5V","Datasheets":"FDV304P Molded Pkg, SUPERSOT, ...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.4600 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Co...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.4600 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Co...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.1 Ohm @ 500mA, 4.5V","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Series":"-","Standard Package":"3,000","Supplier Device Package":"SOT-23","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"FDV304P Molded Pkg, SUPERSOT, 3 Lead Drawing","Power - Max":"350mW","Package / Case":"TO-236-3, SC-59, SOT-23-3","Mounting Type...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.4600 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Co...

{"Polarity":"P","Gate-Source Voltage (Max)":"8(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.46(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"25(V)","Packaging":"Tape and Reel","Power Dissipation":"0.35(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...