Product Datasheet Search Results:
- FMP20N50E
- Fuji Electric Corp. Of America
- 20 A, 500 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- FMP20N50ES
- Fuji Electric Corp. Of America
- 20 A, 500 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Fujielectric.co.jp/FMP20N50E
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"582 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1511 Bytes - 16:57:15, 18 January 2026
Fujielectric.co.jp/FMP20N50ES
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"582 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1515 Bytes - 16:57:15, 18 January 2026
Fuji_semiconductor/FMP20N50E
{"Category":"Power MOSFET","Dimensions":"10 x 4.5 x 15 mm","Maximum Continuous Drain Current":"\u00b120 A","Width":"4.5 mm","Maximum Drain Source Voltage":"500 V","Package Type":"TO-220AB","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"77 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"22 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"2650 pF @ 25 V","Length":"10 mm...
2229 Bytes - 16:57:15, 18 January 2026





