Product Datasheet Search Results:
5 Pages, 571 KB, Original- FMR19N60ES
- Fuji Electric Corp. Of America
- 19 A, 600 V, 0.365 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fujielectric.co.jp/FMR19N60ES
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"3.13 W","Avalanche Energy Rating (Eas)":"799 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"19 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"76 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1532 Bytes - 02:05:53, 10 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FMR19N60ES.pdf | 0.56 | 1 | Request |
