Product Datasheet Search Results:
1 Pages, 87 KB, Scan- GC1601EE
- Api Electronics Group
- 1 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1 Pages, 87 KB, Scan- GC1601EE-2%
- Api Electronics Group
- 1 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1 Pages, 87 KB, Scan- GC1601EE-5%
- Api Electronics Group
- 1 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
Product Details Search Results:
Apitech.com/GC1601EE
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Breakdown Voltage-Min":"45 V","Terminal Form":"FLAT","Diode Capacitance Ratio-Min":"4.4","Package Style":"MICROWAVE","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"1 pF","Number of Elements":"2","Diode Cap Tolerance":"10 %","Quality Factor-Min":"2000","Terminal Position":"UNSPECIFIED","Diode Type":"VARIABLE CAPACITANCE DIODE","Pa...
1320 Bytes - 17:43:40, 16 January 2026
Apitech.com/GC1601EE-2%
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Breakdown Voltage-Min":"45 V","Terminal Form":"FLAT","Diode Capacitance Ratio-Min":"4.4","Package Style":"MICROWAVE","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"1 pF","Number of Elements":"2","Diode Cap Tolerance":"2 %","Quality Factor-Min":"2000","Terminal Position":"UNSPECIFIED","Diode Type":"VARIABLE CAPACITANCE DIODE","Pac...
1335 Bytes - 17:43:40, 16 January 2026
Apitech.com/GC1601EE-5%
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Breakdown Voltage-Min":"45 V","Terminal Form":"FLAT","Diode Capacitance Ratio-Min":"4.4","Package Style":"MICROWAVE","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"1 pF","Number of Elements":"2","Diode Cap Tolerance":"5 %","Quality Factor-Min":"2000","Terminal Position":"UNSPECIFIED","Diode Type":"VARIABLE CAPACITANCE DIODE","Pac...
1336 Bytes - 17:43:40, 16 January 2026
Various/GC1601EE
{"C1/C2 Min. Capacitance Ratio":"4.4","V(RRM)(V) Rep.Pk.Rev. Voltage":"45","Semiconductor Material":"Silicon","Q Factor Min.":"2000","Package":"Micro-T","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"500f","@V(C1) Min.(V)(Test Condition)":"0","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
813 Bytes - 17:43:40, 16 January 2026
Various/GC1601EE-+2
{"C1/C2 Min. Capacitance Ratio":"4.4","V(RRM)(V) Rep.Pk.Rev. Voltage":"45","Semiconductor Material":"Silicon","Q Factor Min.":"2000","Package":"Micro-T","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"500f","@V(C1) Min.(V)(Test Condition)":"0","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
831 Bytes - 17:43:40, 16 January 2026
Various/GC1601EE-+5
{"C1/C2 Min. Capacitance Ratio":"4.4","V(RRM)(V) Rep.Pk.Rev. Voltage":"45","Semiconductor Material":"Silicon","Q Factor Min.":"2000","Package":"Micro-T","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"500f","@V(C1) Min.(V)(Test Condition)":"0","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
831 Bytes - 17:43:40, 16 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| EPM7192EGC160-20.pdf | 0.92 | 1 | Request | |
| EPM7192EGC160-12.pdf | 0.92 | 1 | Request | |
| EPM7192EGC160-15.pdf | 0.92 | 1 | Request | |
| GC160A12-R7B.pdf | 0.12 | 1 | Request | |
| GC160A48-R7B.pdf | 0.12 | 1 | Request | |
| GC160A24-AD1.pdf | 0.12 | 1 | Request | |
| GC160A24-R7B.pdf | 0.12 | 1 | Request | |
| GC160A48-AD1.pdf | 0.12 | 1 | Request | |
| GC160A12-AD1.pdf | 0.12 | 1 | Request |
