Product Datasheet Search Results:
9 Pages, 89 KB, Original- HAF2021-90L
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOSFET Series Power Switching
Product Details Search Results:
Renesas.com/HAF2021-90STR
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0150 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transist...
1485 Bytes - 04:43:39, 16 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| UHAF204165A8445A11.pdf | 0.03 | 1 | Request |
