- HSD226
- Renesas Technology / Hitachi Semiconductor
- Diode; Detector and mixer; VR (V): [25]; IF (mA): -; Pd (mW): -; rf (ohm) max: -; Condition IF at rf (mA): -; Condition f at rf (MHz): -; VF (V) max: 0.33; Condition IF at VF (mA): 1; C (pF) max: 2.8; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP
- HSD226-E
- Renesas Technology / Hitachi Semiconductor
- Silicon Schottky Barrier Diode for High Speed Switching
- HSD226KRF
- Renesas Technology / Hitachi Semiconductor
- Diode, Silicon Schottky Barrier Diode for High Speed Switching
- HSD226KRF-E
- Renesas Technology / Hitachi Semiconductor
- Diode: Silicon Schottky Barrier Diode for High Speed Switching
- HSD226-N
- Renesas Technology / Hitachi Semiconductor
- Silicon Schottky Barrier Diode for High Speed Switching
- HSD226
- Renesas Electronics
- 0.05 A, 25 V, SILICON, SIGNAL DIODE
- HSD226KRF-E
- Renesas Electronics
- DIODE SCHOTTKY 25V 50MA SFP - HSD226KRF-E
- HSD226-N
- Renesas Electronics
- 0.05 A, 25 V, SILICON, SIGNAL DIODE