5 Pages, 142 KB, Original- HSL278
- Renesas Technology / Hitachi Semiconductor
- Diode; Detector and mixer; VR (V): 30; IF (mA): -; Pd (mW): -; rf (ohm) max: -; Condition IF at rf (mA): -; Condition f at rf (MHz): -; VF (V) max: 0.3; Condition IF at VF (mA): 1; C (pF) max: 1.5; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: EFP
5 Pages, 142 KB, Original- HSL278-E
- Renesas Technology / Hitachi Semiconductor
- Silicon Schottky Barrier Diode
7 Pages, 155 KB, Original- HSL278
- Renesas Electronics
- 0.03 A, 30 V, SILICON, SIGNAL DIODE
7 Pages, 155 KB, Original- HSL278KRF-E
- Renesas Electronics
- DIODE SCHOTTKY 30V 30MA EFP - HSL278KRF-E
