Product Datasheet Search Results:
- IRF1010N
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB Tube
- IRF1010NPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB Tube
- IRF1010NSPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK Tube
- IRF1010NSTRLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R
- IRF1010NSTRRPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R
- IRF1010N
- International Rectifier
- 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010N with Standard Packaging
- IRF1010N-002PBF
- International Rectifier
- 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- IRF1010N-003PBF
- International Rectifier
- 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- IRF1010N-004PBF
- International Rectifier
- 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- IRF1010N-005PBF
- International Rectifier
- 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- IRF1010N-006PBF
- International Rectifier
- 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- IRF1010N-007PBF
- International Rectifier
- 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Infineon.com/IRF1010N
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"85(A)","Mounting":"Through Hole","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"180(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1466 Bytes - 02:17:40, 16 January 2026
Infineon.com/IRF1010NPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"85(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"180(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1542 Bytes - 02:17:40, 16 January 2026
Infineon.com/IRF1010NSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"85(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"180(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1511 Bytes - 02:17:40, 16 January 2026
Infineon.com/IRF1010NSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"85(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"180(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1578 Bytes - 02:17:40, 16 January 2026
Infineon.com/IRF1010NSTRRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"85(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"180(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1526 Bytes - 02:17:40, 16 January 2026
Irf.com/IRF1010N
{"Polarity":"N","Continuous Drain Current":"85 A","Mounting":"Through Hole","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Product Category":"MOSFET","Gate-Source Voltage (Max)":"\ufffd20 V","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"TO-220AB","Drain-Source On-Res":"0.011 ohm","Manufacturer":"INTERNATIONAL RECTIFIER","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Ra...
1553 Bytes - 02:17:40, 16 January 2026
Irf.com/IRF1010N-002PBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN OVER NICKEL","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"72 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Co...
1411 Bytes - 02:17:40, 16 January 2026
Irf.com/IRF1010N-003PBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN OVER NICKEL","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"72 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Co...
1412 Bytes - 02:17:40, 16 January 2026
Irf.com/IRF1010N-004PBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN OVER NICKEL","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"72 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Co...
1414 Bytes - 02:17:40, 16 January 2026
Irf.com/IRF1010N-005PBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN OVER NICKEL","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"72 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Co...
1412 Bytes - 02:17:40, 16 January 2026
Irf.com/IRF1010N-006PBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN OVER NICKEL","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"72 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Co...
1413 Bytes - 02:17:40, 16 January 2026
Irf.com/IRF1010N-007PBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN OVER NICKEL","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"72 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Co...
1408 Bytes - 02:17:40, 16 January 2026















