Product Datasheet Search Results:

IRF9530.pdf7 Pages, 104 KB, Original
IRF9530
Fairchild Semiconductor
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
IRF9530.pdf5 Pages, 195 KB, Scan
IRF9530
Harris Semiconductor
Power MOSFET Data Book 1990
IRF9530N.pdf61 Pages, 1032 KB, Original
IRF9530N
Microcomputer Components
8-Bit CMOS Single-Chip Microcontroller
IRF9530NPBF.pdf9 Pages, 229 KB, Original
IRF9530NPBF
Infineon Technologies Ag
Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB Tube
IRF9530NS.pdf11 Pages, 145 KB, Original
IRF9530NS
Infineon Technologies Ag
Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab) D2PAK T/R
IRF9530NSPBF.pdf11 Pages, 764 KB, Original
IRF9530NSPBF
Infineon Technologies Ag
Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab) D2PAK Tube
IRF9530NSTRLHR.pdf11 Pages, 145 KB, Original
IRF9530NSTRLHR
Infineon Technologies Ag
Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab)
IRF9530NSTRLPBF.pdf11 Pages, 811 KB, Original
IRF9530NSTRLPBF
Infineon Technologies Ag
Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab) D2PAK T/R
IRF9530NSTRRPBF.pdf11 Pages, 145 KB, Original
IRF9530NSTRRPBF
Infineon Technologies Ag
Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab) D2PAK T/R
IRF9530.pdf7 Pages, 64 KB, Original
IRF9530
Intersil Corporation
12A, 100V, 0.300 ?, P-Channel Power MOSFETs
IRF9530.pdf1 Pages, 44 KB, Original
IRF9530
International Rectifier
TO-220 / TO-247 HEXFET Power MOSFETs
IRF9530N.pdf9 Pages, 116 KB, Original

Product Details Search Results:

Infineon.com/IRF9530NPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"79(W)","Continuous Drain Current":"14(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1518 Bytes - 08:09:25, 01 November 2024
Infineon.com/IRF9530NS
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"3.8(W)","Continuous Drain Current":"14(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1500 Bytes - 08:09:25, 01 November 2024
Infineon.com/IRF9530NSPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1511 Bytes - 08:09:25, 01 November 2024
Infineon.com/IRF9530NSTRLHR
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1510 Bytes - 08:09:25, 01 November 2024
Infineon.com/IRF9530NSTRLPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1602 Bytes - 08:09:25, 01 November 2024
Infineon.com/IRF9530NSTRRPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1525 Bytes - 08:09:25, 01 November 2024
Irf.com/IRF9530N
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"52 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...
1478 Bytes - 08:09:25, 01 November 2024
Irf.com/IRF9530N-002
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"52 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...
1461 Bytes - 08:09:25, 01 November 2024
Irf.com/IRF9530N-002PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"52 A","Channel Type":"P-CHANNEL","FET Technolo...
1532 Bytes - 08:09:25, 01 November 2024
Irf.com/IRF9530N-003
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"52 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...
1463 Bytes - 08:09:25, 01 November 2024
Irf.com/IRF9530N-003PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"52 A","Channel Type":"P-CHANNEL","FET Technolo...
1532 Bytes - 08:09:25, 01 November 2024
Irf.com/IRF9530N-004
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"52 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...
1462 Bytes - 08:09:25, 01 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
IRF9530N.pdf0.121Request
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