Product Datasheet Search Results:
11 Pages, 683 KB, Original- IRL2910STRRPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R
10 Pages, 333 KB, Original- IRL2910STRR
- International Rectifier
- 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
11 Pages, 683 KB, Original- IRL2910STRRPBF
- International Rectifier
- Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) D2PAK T/R
1 Pages, 44 KB, Original- IRL2910STRR
- N/a
- Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
Product Details Search Results:
Infineon.com/IRL2910STRRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"55(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1530 Bytes - 10:00:16, 14 January 2026
Irf.com/IRL2910STRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"520 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"55 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-M...
1650 Bytes - 10:00:16, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRL2910S.pdf | 0.33 | 1 | Request |
