Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"42(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"IPAK","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"110(W)","Continuous Drain Current":"42(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"IPAK","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"42(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"IPAK","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"60(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"IPAK","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"75","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRLR2905","Rds On (Max) @ Id, Vgs":"27 mOhm @ 25A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","P...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Design Resources":"IRLU2905 Saber Model IRLU2905 Spice Model","Product Photos":"DPAK_369D\u221201","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"75","Supplier Device Package":"I-Pak","Datasheets":"IRLR/U2905","Rds On (Max) @ Id, Vgs":"27 mOhm @ 25A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"110W","Other Names":"*IRLU2905 Q853121...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"42(A)","Mounting":"Through Hole","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"IPAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"210 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"160 A","Channel Type":"N-C...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Design Resources":"IRLR2905Z Saber Model IRLR2905Z Spice Model","Product Photos":"DPAK_369D\u221201","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"75","Supplier Device Package":"I-Pak","Datasheets":"IRLR2905Z, IRLU2905Z","Rds On (Max) @ Id, Vgs":"13.5 mOhm @ 36A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"110W","Other Names":"*IR...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-251-3 Long Leads, IPak, TO-251AB","Gate Charge (Qg) @ Vgs":"35nC @ 5V","Product Photos":"DPAK_369D\u221201","PCN Assembly/Origin":"Mosfet Fab Transfer 15/Jul/2013 Backend Wafer Transfer 23/Oct/2013 Assembly Site Addition 30/Jun/2014","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integra...