Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"ISOPLUS i5 (back) ISOPLUS i5","Family":"FETs - Single","Vgs(th) (Max) @ Id":"6.5V @ 1mA","Series":"HiPerFET\u2122, PolarP2\u2122","Standard Package":"25","Supplier Device Package":"ISOPLUSi5-Pak\u2122","Datasheets":"IXFL32N120P","Rds On (Max) @ Id, Vgs":"340 mOhm @ 16A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"520W","Package / Case":"ISOPLUSi5-Pak\u2122","Mounting Type":"Through ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"ISOPLUS i5 (back) ISOPLUS i5","Family":"FETs - Single","Vgs(th) (Max) @ Id":"6.5V @ 1mA","Series":"HiPerFET\u2122, PolarP2\u2122","Standard Package":"25","Supplier Device Package":"ISOPLUSi5-Pak\u2122","Datasheets":"IXFL32N120P","Rds On (Max) @ Id, Vgs":"340 mOhm @ 16A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"520W","Package / Case":"ISOPLUSi5-Pak\u2122","Mounting Type":"Through ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"24 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL"...