Product Datasheet Search Results:
6 Pages, 48 KB, Original- NDB7060L
- Fairchild Semiconductor
- N-Channel Logic Level Enhancement Mode Field Effect Transistor
12 Pages, 350 KB, Original- NDB7060L86Z
- Fairchild Semiconductor Corporation
- 75 A, 60 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
6 Pages, 106 KB, Scan- NDB7060L99Z
- Fairchild Semiconductor Corporation
- 75 A, 60 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
6 Pages, 225 KB, Scan- NDB7060LL86Z
- Fairchild Semiconductor Corporation
- 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
6 Pages, 107 KB, Scan- NDB7060LL99Z
- Fairchild Semiconductor Corporation
- 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
6 Pages, 107 KB, Scan- NDB7060LS62Z
- Fairchild Semiconductor Corporation
- 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
6 Pages, 53 KB, Original- NDB7060L
- National Semiconductor
- N-Channel Enhancement Mode Field Effect Transistor
6 Pages, 48 KB, Original- NDB7060L
- On Semiconductor
- Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) TO-263AB
Product Details Search Results:
Fairchildsemi.com/NDB7060L
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"4000pF @ 25V","Series":"-","Standard Package":"1","Supplier Device Package":"D\u00b2PAK","Datasheets":"NDP7060L, NDB7060L","Rds On (Max) @ Id, Vgs":"15 mOhm @ 37.5A, 5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"150W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads...
1663 Bytes - 20:56:17, 13 January 2026
Fairchildsemi.com/NDB7060L86Z
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"550 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0130 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"225 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1540 Bytes - 20:56:17, 13 January 2026
Fairchildsemi.com/NDB7060L99Z
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"550 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0130 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"225 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1504 Bytes - 20:56:17, 13 January 2026
Fairchildsemi.com/NDB7060LL86Z
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"550 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"225 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1515 Bytes - 20:56:17, 13 January 2026
Fairchildsemi.com/NDB7060LL99Z
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"550 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0150 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"225 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1510 Bytes - 20:56:17, 13 January 2026
Fairchildsemi.com/NDB7060LS62Z
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"550 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0150 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"225 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1509 Bytes - 20:56:17, 13 January 2026
Onsemi.com/NDB7060L
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"75(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Power Dissipation":"150(W)","Operating Temp Range":"-65C to 175C","Package Type":"TO-263AB","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1422 Bytes - 20:56:17, 13 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| W1060LG450.pdf | 0.13 | 1 | Request | |
| W1060LG420.pdf | 0.13 | 1 | Request | |
| US2:SN4060L1225W.pdf | 5.32 | 1 | Request | |
| US2:SN4060L1225.pdf | 3.25 | 1 | Request | |
| US2:P3060L1200ACU.pdf | 3.25 | 1 | Request | |
| US2:CED63B060L.pdf | 7.06 | 1 | Request | |
| US2:NEG4C060L.pdf | 0.40 | 1 | Request | |
| US2:S3060L1200AG.pdf | 3.25 | 1 | Request | |
| US2:ST3060L1200AW.pdf | 3.25 | 1 | Request | |
| US2:P3060L1125ACU.pdf | 3.25 | 1 | Request | |
| US2:P3060L1125ACUW.pdf | 3.25 | 1 | Request | |
| US2:S3060L1125AGW.pdf | 3.25 | 1 | Request |
