Product Datasheet Search Results:
1 Pages, 107 KB, Scan- P2N2907
- Continental Device India Limited
- Semiconductor Device Data Book 1996
1 Pages, 107 KB, Scan- P2N2907A
- Continental Device India Limited
- Semiconductor Device Data Book 1996
8 Pages, 117 KB, Original
6 Pages, 143 KB, Original- P2N2907A
- Motorola / Freescale Semiconductor
- Silicon PNP Transistor
6 Pages, 101 KB, Original- JANSP2N2907A
- Microsemi Corp.
- 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
6 Pages, 101 KB, Original- JANSP2N2907AL
- Microsemi Corp.
- 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
6 Pages, 101 KB, Original- JANSP2N2907AUA
- Microsemi Corp.
- 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
6 Pages, 101 KB, Original- JANSP2N2907AUB
- Microsemi Corp.
- 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
6 Pages, 101 KB, Original- JANSP2N2907AUBC
- Microsemi Corp.
- 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
6 Pages, 197 KB, Original- P2N2907A
- On Semiconductor
- TRANS PNP 60V 0.6A TO-92
Product Details Search Results:
Microsemi.com/JANSP2N2907A
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"50","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"SIMILAR TO TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"45 ns","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTT...
1405 Bytes - 09:30:58, 16 January 2026
Microsemi.com/JANSP2N2907AL
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"50","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"SIMILAR TO TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"45 ns","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTT...
1411 Bytes - 09:30:58, 16 January 2026
Microsemi.com/JANSP2N2907AUA
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"50","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-4","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"45 ns","Collector Current-Max (IC)":"0.6000 A","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Termin...
1423 Bytes - 09:30:58, 16 January 2026
Microsemi.com/JANSP2N2907AUB
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"50","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-4","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"45 ns","Collector Current-Max (IC)":"0.6000 A","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Termin...
1422 Bytes - 09:30:58, 16 January 2026
Microsemi.com/JANSP2N2907AUBC
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"50","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-4","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"45 ns","Collector Current-Max (IC)":"0.6000 A","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Termin...
1430 Bytes - 09:30:58, 16 January 2026
Onsemi.com/P2N2907A
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"PNP","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.6V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"5,000","Voltage - Collector Emitter Breakdown (Max)":"60V","Supplier Device Package":"TO-92-3","Packaging":"Bulk","...
1657 Bytes - 09:30:58, 16 January 2026
Onsemi.com/P2N2907AG
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"PNP","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.6V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"5,000","Voltage - Collector Emitter Breakdown (Max)":"60V","Supplier Device Package":"TO-92-3","Packaging":"Bulk","...
1624 Bytes - 09:30:58, 16 January 2026
Onsemi.com/P2N2907ARL1
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"PNP","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.6V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"60V","Supplier Device Package":"TO-92-3","Packaging":"Tape & ...
1705 Bytes - 09:30:58, 16 January 2026
Onsemi.com/P2N2907ARL1G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"PNP","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.6V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"60V","Supplier Device Package":"TO-92-3","Packaging":"Tape & ...
1673 Bytes - 09:30:58, 16 January 2026
Onsemi.com/P2N2907AZL1
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"PNP","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.6V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"60V","Supplier Device Package":"TO-92-3","Packaging":"Tape & ...
1705 Bytes - 09:30:58, 16 January 2026
Onsemi.com/P2N2907AZL1G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"PNP","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.6V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"60V","Supplier Device Package":"TO-92-3","Packaging":"Tape & ...
1704 Bytes - 09:30:58, 16 January 2026
Various/P2N2907
{"t(s) Max. (s) Storage time.":"80n","V(CE)sat Max.(V)":"1.6","Absolute Max. Power Diss. (W)":"625m","t(on) Max. (s) Turn-On Time":"50n","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"30","V(BR)CBO (V)":"60","I(C) Abs.(A) Collector Current":"600m","t(off) Max. (s) Turn-Off Time":"110n","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"20n","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-92","f(T) Min. (Hz) Transition Freq":"200M","@V(CE) (V) (Test Condition)":"20","@I(B) (A) (...
1177 Bytes - 09:30:58, 16 January 2026
